• Title/Summary/Keyword: 전압-전류 곡선

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Analysis of single-phase PMSM capability curve using motor parameter, voltage limit and current limit (전동기 제정수와 전압 및 전류 제한에 따른 단상 영구자석 동기전동기의 능력곡선 분석)

  • Choi, Seungbo;Lee, Wook-Jin
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.400-401
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    • 2019
  • 본 논문에서는 전동기 제정수와 전압 및 전류제한 값에 따른 단상 영구자석 동기전동기의 능력곡선을 분석하였다. 역기전력 상수와 고정자 인덕턴스 및 전압 전류 제한값에 따라 영구자석 동기전동기의 능력곡선이 변하게 되며, 최대토크를 얻을 수 있는 인가전압의 크기 및 위상이 결정된다. 제안한 능력곡선의 분석방법을 통하여 얻은 최대토크에서의 인가전압을 컴퓨터 모의실험으로 검증하였다.

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Vth Compensation Current Source with Poly-Si TFT for System-On-Panel (System-On-Panel을 위한 Poly-Si TFT Vth보상 전류원)

  • Hong, Moon-Pyo;Jeong, Ju-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.10 s.352
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    • pp.61-67
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    • 2006
  • We developed a constant current source which is insensitive to threshold voltage variation caused by irregular grain boundary distribution in polycrystalline silicon. The proposed current source has superior saturation characteristics over wide range of input voltages as well as small current error compared to the previously reported Vth compensated sources. We measured the circuit performance and error in current due to parameter variation by using HSPICE.

Analysis of Current-voltage Characteristic Curve for the Solar Cell using MicroTec Tool (MicroTec을 이용한 태양전지 전류-전압 특성곡선 분석)

  • Jung, Hak-Kee;Han, Ji-Hyung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.6
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    • pp.1045-1050
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    • 2009
  • The current-voltage characteristics of solar cell has been analyzed using MicroTec in this paper. The current-voltage characteristics represents a efficiency of solar cell. The part of metal contact is doped highly, but active region is doped lowly. We have investigated the current-voltage characteristics according to variation of doping concentration from $10^{14}cm^{-3}$ to $10^{17}cm^{-3}$. We has also determined the doping concentration to obtain the maximum efficiency of solar cell, and analyzed this current-voltage characteristics.

Analysis of the Silicon Solar cell According to the doping concentration IV characteristic curve and efficiency process using PC1D Tool (PC1D를 이용한 실리콘 태양전지의 도핑농도에 따른 IV 특성곡선 및 효율 분석)

  • Lee, Byung-Ro;Han, Ji-Hyung;Jung, Hak-Kee;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2010.05a
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    • pp.792-794
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    • 2010
  • 본 연구는 PC1D를 이용하여 태양전지 전류전압 특성곡선및 효율을 분석한 연구이다. 태양전지 전류전압 특성곡선에서 제4상한부분의 면적은 태양전지의 효율을 나타낸다. 곡선인자(Fill Factor)는 개방전압과 단락 전류의 곱에 대한 최대 출력전압과 최대 출력전류의 곱한 값의 비율이다. 본 논문은 태양전지의 최대 효율을 얻기 위해서 도핑 농도를 $1{\times}10^{14}cm^{-3}$부터 $1{\times}10^{17}cm^{-3}$까지 변화시키면서 태양전지의 전류전압 특성곡선 및 최대효율을 분석하였다.

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Breakdown Characteristics of Soils Caused by Impulse Currents (임펄스전류에 의한 토양의 절연파괴특성)

  • Lee, Bok-Hee;Lee, Kang-Soo;Kim, Hoe-Gu
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.24 no.4
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    • pp.103-109
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    • 2010
  • In this paper, breakdown characteristics of soil in a coaxial cylindrical electrode system stressed by impulse currents were experimentally investigated. The breakdown voltage and current waveforms for 4 types of soils were measured, and the threshold electric field intensity, the time-lag to breakdown and the voltage-current (V-I) curves were analyzed and discussed. As a result, the breakdown voltage and current waveforms are strongly dependent on the grain size of soil, and the voltage and current waveforms for gravel and sand differ from those for silt and loess. The threshold electric field intensity Ec is increased in the order of gravel, sand, loess and silt. The V-I curves for all test samples show a 'cross-closed loop' of ${\infty}$-shape. Also, the time-lag to breakdown for gravel and sand are longer than those for silt and loess. It is expected that the results presented in this paper will provide useful information on the design of improving transient performance of a grounding electrode system subjected to lightning current considering the soil ionization.

Characteristics of Ferroelectric-Gate MFISFET Device Behaving to NDRO Configuration (NDRD 방식의 강유전체-게이트 MFSFET소자의 특성)

  • 이국표;강성준;윤영섭
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.1
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    • pp.1-10
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    • 2003
  • Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

Plasma Electrolytic Oxidation Treatment of Al Alloys (알루미늄 합금의 플라즈마전해산화 처리)

  • Kim, Ju-Seok;Mun, Seong-Mo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.191.1-191.1
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    • 2016
  • 본 연구에서는 알루미늄 합금의 PEO(Plasma Electrolytic Oxidation) 피막 형성 거동을 PEO 처리 용액 조성, 온도 및 합금 성분에 따른 전압-시간 곡선을 관찰하여 분석하였다. 알루미늄 합금의 PEO 피막 형성거동은 NaOH 농도, 전해질 온도, 인가 전류밀도 및 합금성분에 따라 다양하게 나타났다. 본 연구에서는 직류 정전류법을 이용하여 Al1050, Al5052, Al6061 합금 표면에 PEO 피막을 형성시켰으며, PEO 피막의 형성이 시작되는 전압 및 발생된 아크의 크기 및 모양을 관찰하여 PEO 피막 형성 거동을 연구하였다. 연구결과 PEO 처리 중의 전해액의 온도가 낮고 전류밀도가 높을수록 시편 표면에서 짧은 시간 내에 아크가 발생하였으며, 전압-시간 곡선은 빠른 속도로 PEO 피막생성 전압에 도달하여 유지되는 거동을 보였다. 동일한 용액조성, 용액온도, 용액 교반속도 및 인가전류밀도에서 관찰된 PEO 피막 형성 거동은 동일시편을 PEO코팅 후 에칭하여 반복 실험할 경우에도 큰 편차를 보였으며, 이로부터 시편의 조성이나 불순물의 존재 등이 크게 영향을 주는 것을 알 수 있었다.

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Electrical Properties of 18[kV] ZnO Surge Arrester Stressed by the Mixed DC and 60[Hz] AC Voltages (직류+60[Hz]교류 중첩전압에 대한 18[kV] ZnO 피뢰기의 전기적 특성)

  • Lee, Su-Bong;Lee, Seung-Ju;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.21 no.10
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    • pp.66-72
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    • 2007
  • This paper describes the characteristics of power loss and leakage currents flowing through new and used 18[kV] zinc oxide(ZnO) surge arrester under the mixed DC and AC voltages. The mixed DC and AC voltage generator of 50[kV] peak was designed and fabricated. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K. The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in both I-V curves and R-V curves was observed at the low current region. As a result, the increase of DC component in the mixed voltages causes the increase of resistive component of total leakage current of ZnO surge arrester. Also, in the case of same applied voltage, the leakage current flowing through the used ZnO surge arrester was higher than that of the new ZnO surge arrester.

The Life Analysis for the Influence of Output Ripple Current by Frequency applied in a PEMFC (출력 리플전류 주파수에 따른 연료전지 수명 연구)

  • Kim, J.H.;Jang, M.H.;Choi, J.S.;Kim, D.Y.;Tak, Y.S.;Cho, B.H.
    • Proceedings of the KIPE Conference
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    • 2010.07a
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    • pp.383-384
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    • 2010
  • 본 논문에서는 연료전지에 연결되는 부하가 어떠한 주파수특성을 갖는 것이 바람직한지 알아보기 위해 출력 리플전류 주파수에 따른 연료전지 수명의 영향을 알아보았다. 전자부하를 통해 일정한 크기의 리플전류를 주파수대역을 바꿔가며 단위 셀에 인가하여 장시간 운전한 뒤 연료전지의 전압-전류곡선을 측정하였다. 측정된 전압-전류곡선을 통해 연료전지의 성능을 비교함으로써 어떠한 출력 리플전류 주파수가 연료전지 수명에 더 큰 영향을 주는지 확인하였다.

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The Shift of Threshold Voltage and Subthreshold Current Curve in LDD MOSFET Degraded Under Different DC Stress-Biases (DC 스트레스에 의해 노쇠화된 LDD MOSFET에서 문턱 전압과 Subthreshold 전류곡선의 변화)

  • Lee, Myung-Buk;Lee, Jung-Il;Kang, Kwang-Nham
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.5
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    • pp.46-51
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    • 1989
  • The degradation phenomena induced by hot-carrier injection was studied from the shift of threshold voltage and subthreshold current curve in LDD NMOSFET degraded under different DC stress-biases. Threshold voltage shift ${Delta}V_{tex}$ defined in saturation region was separated into contri butions due to trapped oxide charge $V_{ot}$ and interface traps ${Delta}V_{it}$ generated from midgap to threshold voltage. Under th positive stress electric field (TEX>$V_g>V_d$) condition, the shift of threshold voltage was attributed to the electrons traped ar gate oxide but subthreshold swing was not negative stress electric field ($V_g) condition, holes seems to be injected positive charges so threshold voltage and subthreshold swing were increased.

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