• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.273-281
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• 1986

This study is focused on the correct measurement of the equations for the determination of the impedance parameters-the differential capacity of the double layer $C_d$, solution resistance $R_Q$, transfer resitance $R_i$, and adsorption pseudcapacity $C_{\phi}$/ The application of only an imaginary part of complex function of ${\omega}$ at the sinusoidal steady state indicates the following equations of total impedance: at low frequency $|Z_{LF}|=1/{\omega}_1\;C_{\phi}\;{\sqrt{1+{{\omega}_1}^2/{\omega}^2}$, at high frequency $|Z_{HF}|={\omega}_2/({\omega}_1{\omega}_3C{\phi})({\omega}^2+{{\omega}_2}^2)\;{\sqrt{{({\omega}^2+{\omega}_2{\omega}_3)}^2+{({\omega}_2{\omega}-{\omega_3{\omega})^2}}$. The values of the total impedance of cell, phase angle, and cell current that are necessary for the calculations of impedance parameters were experimentally measured from 200 to 6000Hz for the following supporting electrolytes, 0.5M $Na_2SO_4$, 1M NaCl, 19.373% sea water, 1M HCl, 1M $KNO_3$ and for $10^{-2}M$ KI and 60mM DBNA (Di-iso-Butylnitrosoamine) in these supporting electrolytes. The derived equations in this study shows that the values of impedance parameters of $C_d,\;C_{\phi},\;R_i\;and\;R_Q\;are\;15{\sim}40\;{\mu}F/cm^2,\;162{\sim}758\;{\mu}F/cm^2\;11.5{\sim}57.6\;ohm{\cdot}cm^2\;and\;0.5{\times}10^{-2}{\sim}4.1{\times}10^{-2}\;ohm{\cdot}cm^2$ respectively.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.70-75
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• 2000

The recycled single crystal silicon wafers have been fabricated into solar cells. It can be a solution for the high cost in materials for solar cells and recycling of materials. So, p-type (100) single crystal silicon wafers with high resistivity of $10-14\;{\Omega}cm$ and the thickness of $650\;{\mu}m$ were used for the fabrication of solar cells. Optimistic conditions of formation of back surface field, surface texturing and anti-reflection coating were studied for getting high efficiency. In addition, thickness variation of solar cell was also studied for increase of efficiency. As a result, the solar cell with efficiency of 10% with a curve fill factor of 0.53 was fabricated with the wafers which have the area of $4\;cm^2$ and thickness of $300\;{\mu}m$. According to above results, recycling possibility of wasted wafers to single crystal silicon solar cells was confirmed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.1
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• pp.9-14
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• 2016

This study evaluated a digital locking device design using detection distance of 13.4mm of a human body sensing type magnetic field coil. In contrast to digital locking devices that are used nowadays, the existing serial number entering buttons, lighting, number cover, corresponding pcb, exterior case, and data delivery cables have been deleted and are only composed of control ON/OFF power switches and emergency terminals. When the magnetic field coil substrates installed inside the inner case detects the electric resistance delivered from the opposite side of the 12mm interval exterior contacting the glass body part, the corresponding induced current flows. At this time, the magnetic field coil takes the role as a sensor when coil frequency of the circular coil is transformed. The magnetic coil as a sensor detects a change in the oscillation frequency output before and after the body is detected. This is then amplified to larger than 2,000%, transformed into digital signals, and delivered to exclusive software to compare and search for embedded data. The detection time followed by the touch area of the body standard to a $12.8{\emptyset}$ magnetic field coil was 30% contrast at 0.08sec and 80% contrast at 0.03sec, in which the detection distance was 13.4mm, showing the best level.

• Journal of the Korean Applied Science and Technology
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• v.35 no.4
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• pp.1088-1095
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• 2018

In this study, reduced graphene oxide/polyaniline composite was fabricated tomaximize their advantages with electrochemical performances and use as a electrodematerial for supercapcaitor. Polyaniline as an electrode material was synthesized bychemical polymerization of aniline monomer and reduced graphene oxide wasintroduced to prepare composite with polyaniline without any pre-treatment. Thereduced graphene oxide, polyaniline and their composite electrodes were fabricatedon gold coated PET(polyethylene terephthalate) substrate through spray coatingmethod which can also apply to industrial scale. we have also prepared reducedgraphene oxide and polyaniline single material electrode to compare theirelectrochemical properties with reduced graphene oxide/polyaniline composite electrode. We have analyzed and compared electrochemical properties of eachelectrodes by using cyclic voltammetry(CV), galvanostaticcharge-discharge(GCD) and electrochemical impedancespectroscopy(EIS) at same condition. As a result, reduced graphene oxide /polyaniline composite electrode showed higher capacitance value more thanpolyaniline and reduced graphene oxide electrode, respectively. Internal resistanceof reduce graphene oxide/polyaniline composite electrode was 24% and 58% lessthan polaniline and reduced graphene oxide electrode respectively. These resultsconsidered that reduced graphene oxide/polyaniline composite electrode has potential ability and enable to apply flexible energy storage and wearable devices.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.190-195
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• 2011

To investigate the photon-trapping effect and scattering layer effect of $TiO_2$ multi-layer in dye-sensitized solar cell (DSSC) and the degree of recombination of electrons at the electrode treated $TiCl_4$, we formed electrodes of different conditions and obtained the most optimal electrode conditions. To estimate characteristics of the cell, IV curve, UV-Vis spectrophotometer, electrochemical impedance spectroscopy (EIS) and incident photon-to-current conversion efficiency (IPCE) were measured. As a result, we confirmed that the multi-layer's efficiency was higher than that of monolayer in the IV curve and the performance of $TiCl_4$ treated electrode was increased according to decreasing the impedance of EIS. Among several conditions, the efficiency of the cell with scattering layer is higher than that of a layer with the base electrode about 19%. Because the light scattering layer enhances the efficiency of the transmission wavelength and has long electron transfer path. Therefore, the value of the short circuit current increases approximately 10% and IPCE in the maximum peak also increases about 12%.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.29 no.1A
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• pp.75-84
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• 2009

The present study assesses the chloride threshold level for corrosion of steel in concrete by examining the properties of four different binders used for blended concrete in terms of chloride binding, buffering of cement matrix to a pH fall and the corrosion behaviour. As binders, ordinary Portland cement (OPC), 30% pulverised fuel ash (PFA), 60% ground granulated blast furnace slag (GGBS) and 10% silica fume (SF) were used in a concrete mix. Testing for chloride binding was carried out using the water extraction method, the buffering of cement matrix was assessed by measuring the resistance to an artificial acidification of nitric acid, and the corrosion rate of steel in mortar with chlorides in cast was measured at 28 days using an anodic polarisation technique. Results show that the chloride binding capacity was much affected by $C_{3}A$ content and physical adsorption, and its order was 60% GGBS>30% PFA>OPC>10% SF. The buffering of cement matrix to a pH fall was varied with binder type and given values of the pH. From the result of corrosion test, it was found that the chloride threshold ranged 1.03, 0.65, 0.45 and 0.98% by weight of cement for OPC, 30% PFA, 60% GGBS and 10% SF respectively, assuming that corrosion starts at the corrosion rate of $0.1-0.2{\mu}A/cm^{2}$. The mole ratio of [$Cl^{-}$]:[$H^{+}$], as a new presentation of the chloride threshold, indicated the value of 0.008-0.009, irrespective of binder, which would be indicative of the inhibitive characteristic of binder.

• Journal of Korean Society of Environmental Engineers
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• v.39 no.10
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• pp.591-598
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• 2017

Power overshoot phenomenon was observed in microbial fuel cells (MFCs) used non-catalyzed graphite felt as cathode. Voltage loss in MFCs was mainly caused by cathode potential loss. Cheap stainless steel scrubber, which has high conductivity, and Pt/C coated graphite felt as cathode were used for overcoming power overshoot and reducing the cathode potential loss in MFCs. The MFCs used stainless steel scrubber showed no power overshoot even slow catholyte flow rate and produced 29% enhanced maximum current density ($23.9A/m^3$) than MFCs used non-catalyzed graphite felt while the power overshoot phenomenon was existed in Pt/C coated MFCs. Increasing catholyte flow rate resulted in disappearing power overshoot of MFCs used non-catalyzed graphite felt. In addition, maximum power density and current density of both MFCs used non-catalyzed graphite felt and stainless steel scrubber increased by 2-3.5 times. Cathode potential losses in all region of activation loss, ohmic loss, and mass transport loss were reduced according to increase of catholyte flow rate. Therefore, stainless steel scrubber has advantages that are economical materials as electrode and prevents power overshoot, leading to enhance electricity generation. In addition, increasing catholyte flux is one of great solution when power overshoot caused by cathodic overpotential is observed in MFCs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.5-10
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• 2012

In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).