• Title/Summary/Keyword: 전류데이터

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Development of Mixed Sensor Parts for Integrated Radiation Exposure Protection Fireman's Life-saving Alarm (일체형 방사선 피폭 방호 소방관 인명구조 경보기의 혼합형 센서부 개발)

  • Kim, Jae-Hyeong;Lee, Joo-Hyun;Lee, Seung-Ho
    • Journal of IKEEE
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    • v.23 no.4
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    • pp.1457-1460
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    • 2019
  • In this paper, we proposed the development of a mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarm that can be location-tracked and irradiated. To measure radiation exposure dose, we use the PIN-Diode radiation measurement sensor module, a semi-conductive radiation measurement sensor that can minimize size and weight. The design for removing leakage current is carried out to enhance the characteristics of the radiation measurement sensor using PIN-Diode. The IMU sensor module is used to estimate the location of the current fireman at the same time as the accident estimate by adding together the data and the values for acceleration on the three axis. Experiments were conductied by an authorized testing agency to determine the efficiency of the proposed mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarms. The cumulative dose measurement range was measured in the range of 10 μSv to 10 mSv, the highest level in the world. The accuracy was measured from ±6.3% to ±9.0% (137 Cs) and normal operation was found at the international standard of ±15%. In addition, positional accuracy was measured within ±10%, resulting in a high level of results, demonstrating its effectiveness. Therefore, it is expected that more firemen will be able to provide with superior performance integrated radiation exposure protection fireman life-saving alarm.

Multi-Line Driving Technology on PM OLED using Graph theory and Correlation (그래프 이론과 상관성을 이용한 PM OLED 다중선 구동 기술)

  • Lee, Gil-Jae;Lee, Chang-Hoon;Jeong, Je-Chang
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.47 no.1
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    • pp.62-72
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    • 2010
  • PM OLED is used in many applications as one of the display for the next generation. The most essential problems are the power dissipation and the short life time in applying PM OLED into a commercial application. Many efforts are made in developing the panel and in improving the circuit for expanding the current market wider. The life time in PM OLED is expanded by lessening the power dissipation of the circuit for the magnitude of the driving current is lowered. It is possible to minimize the power dissipation from improving the driving technology. The classical technology, Row-to-Row driving, is that row is selected one by one while applying the column current input individually. The multi-line driving is a new technology which is to select multiple rows simultaneously while applying the column current as a whole. However, the solution of the multi-line driving is NP-complete problem. The efficiency is dependant on the sort of picture and the driving condition. This paper presents the new efficient multi-line driving which is that the multiple lines are selected by applying column current together after grouping the simultaneous driving group applying the gnew efficient muthe coi-line dr coefficient. Bengrouping the several rows which has the higher coi-line dr coefficient, the more efficient driving is realized to present the high quality image and to lessen the power dissipation and to stretch the life time in the PM OLED.

A Low Power SRAM using Supply Voltage Charge Recycling (공급전압 전하재활용을 이용한 저전력 SRAM)

  • Yang, Byung-Do;Lee, Yong-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.5
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    • pp.25-31
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    • 2009
  • A low power SRAM using supply voltage charge recycling (SVCR-SRAM) scheme is proposed. It divides into two SRAM cell blocks and supplies two different powers. A supplied power is $V_{DD}$ and $V_{DD}/2$. The other is $V_{DD}/2$ and GND. When N-bit cells are accessed, the charge used in N/2-bit cells with VDD and $V_{DD}/2$ is recycled in the other N/2-bit cells with $V_{DD}/2$ and GND. The SVCR scheme is used in the power consuming parts which bit line, data bus, word line, and SRAM cells to reduce dynamic power. The other parts of SRAM use $V_{DD}$ and GND to achieve high speed. Also, the SVCR-SRAM results in reducing leakage power of SRAM cells due to the body-effect. A 64K-bit SRAM ($8K{\times}8$bits) is implemented in a $0.18{\mu}m$ CMOS process. It saves 57.4% write power and 27.6% read power at $V_{DD}=1.8V$ and f=50MHz.

High Noise Margin LVDS I/O Circuits for Highly Parallel I/O Environments (다수의 병렬 입.출력 환경을 위한 높은 노이즈 마진을 갖는 LVDS I/O 회로)

  • Kim, Dong-Gu;Kim, Sam-Dong;Hwang, In-Seok
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.44 no.1
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    • pp.85-93
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    • 2007
  • This paper presents new LVDS I/O circuits with a high noise margin for use in highly parallel I/O environments. The proposed LVDS I/O includes transmitter and receiver parts. The transmitter circuits consist of a differential phase splitter and a output stage with common mode feedback(CMFB). The differential phase splitter generates a pair of differential signals which have a balanced duty cycle and $180^{\circ}$ phase difference over a wide supply voltage variation due to SSO(simultaneous switching output) noises. The CMFB output stage produces the required constant output current and maintains the required VCM(common mode voltage) within ${\pm}$0.1V tolerance without external circuits in a SSO environment. The proposed receiver circuits in this paper utilizes a three-stage structure(single-ended differential amp., common source amp., output stage) to accurately receive high-speed signals. The receiver part employs a very wide common mode input range differential amplifier(VCDA). As a result, the receiver improves the immunities for the common mode noise and for the supply voltage difference, represented by Vgdp, between the transmitter and receiver sides. Also, the receiver produces a rail-to-rail, full swing output voltage with a balanced duty cycle(50% ${\pm}$ 3%) without external circuits in a SSO environment, which enables correct data recovery. The proposed LVDS I/O circuits have been designed and simulated with 0.18um TSMC library using H-SPICE.

The Fabrication of OTFT-OLED Array Using Ag-paste for Source and Drain Electrode (Ag 페이스트를 소스와 드레인 전극으로 사용한 OTFT-OLED 어레이 제작)

  • Ryu, Gi-Seong;Kim, Young-Bae;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.12-18
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    • 2008
  • Ag paste was employed for source and drain electrode of OTFTs and for the data metal lines of OTFT-OLED array on PC(polycarbonate) substrate. We tested two kinds of Ag-pastes such as pastes for 325 mesh and 500 mesh screen mask to examine the pattern ability and electrical performance for OTFTs. The minimum feature size was 60 ${\mu}m$ for 325 mesh screen mask and 40 ${\mu}m$ for 500 mesh screen mask. The conductivity was 60 $m{\Omega}/\square$ for 325 mesh and 133.1 $m{\Omega}/\square$ for 500 mesh. For the OTFT performance the mobility was 0.35 $cm^2/V{\cdot}sec$ and 0.12 $cm^2/V{\cdot}sec$, threshold voltage was -4.7 V and 0.9 V, respectively, and on/off current ratio was ${\sim}10^5$, for both screen masks. We applied the 500 mash Ag paste to OTFT-OLED array because of its good patterning property. The pixel was composed of two OTFTs and one capacitor and one OLED in the area of $2mm{\times}2mm$. The panel successfully worked in active mode operation even though there were a few bad pixels.

Realization of an IEEE 802.11g VoWLAN Terminal with Support of Adaptable Power Save and QoS During a Call (통화 중 적응적 Power Save와 QoS 지원이 가능한 IEEE B02.11g VoWLAN 단말기 구현)

  • Kwon, Sung-Su;Lee, Jong-Chul
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.10A
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    • pp.1003-1013
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    • 2006
  • There is a serious problem in an 802.11g VoWLAN (Voice over Wireless LAN) terminal that talk time is less than 30% compared with an 802.11b terminal. It is almost impossible to achieve talk time level of the 802.11b MAC transmission method because IEEE 802.11g uses OFDM modulation, which is a kind of multi-carrier method and OFDM transmission speed is 54 Mbps faster than normal modulation. In this paper, a new concept of a Holdover time as a power saving method during a call with 802.11g terminal is suggested for the first time. Increase in the number of engaged terminals as a result of holdover time causes to QoS problem because of the increase in the number of back-off and then contention window. In this paper, to solve the QoS problem, a new approach is suggested such that when in down lint the sequence number of 802.11 G.711 is analyzed in the MAC of the terminal and then the Hold over time depending on loss rate is changed. Also, consumption of an electric current of 802.11b/g and MAC parameter's performance due to busy traffic caused by increase in the number of terminal are analyzed and then real data using VQT and Airopeek are analyzed.

A Chemical Reaction Calculation and a Semi-Empirical Model for the Dynamic Simulation of an Electrolytic Reduction of Spent Oxide Fuels (산화물 사용후핵연료 전해환원 화학 반응 계산 및 동적 모사를 위한 반실험 모델)

  • Park, Byung-Heung;Hur, Jin-Mok;Lee, Han-Soo
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.8 no.1
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    • pp.19-32
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    • 2010
  • Electrolytic reduction technology is essential for the purpose of adopting pyroprocessing into spent oxide fuel as an alternative option in a back-end fuel cycle. Spent fuel consists of various metal oxides, and each metal oxide releases an oxygen element depending on its chemical characteristic during the electrolytic reduction process. In the present work, an electrolytic reduction behavior was estimated for voloxidized spent fuel based on the assumption that each metal-oxygen system is independent and behaves as an ideal solid solution. The electrolytic reduction was considered as a combination of a Li recovery and chemical reactions between the metal oxides such as uranium oxide and the produced Li metal. The calculated result revealed that most of the metal oxides were reduced by the process. It was evaluated that a reduced fraction of lanthanide oxides increased with a decreasing $Li_2O$ concentration. However, most of the lanthanides were expected to be stable in their oxide forms. In addition, a semi-empirical model for describing $U_3O_8$ electrolytic reduction behavior was proposed by considering Li diffusion and a chemical reaction between $U_3O_8$ and Li. Experimental data was used to determine model parameters and, then, the model was applied to calculate the reduction yield with time and to estimate the required time for a 99.9% reduction.

[ $8{\sim}10.9$ ]-GHz-Band New LC Oscillator with Low Phase-Noise and Wide Tuning Range for SONET communication (SONET 통신 시스템을 위한 $8{\sim}10.9$ GHz 저 위상 잡음과 넓은 튜닝 범위를 갖는 새로운 구조의 LC VCO 설계)

  • Kim, Seung-Hoon;Cho, Hyo-Moon;Cho, Sang-Bock
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.1
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    • pp.50-55
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    • 2008
  • In this paper, New LC VCO with $8{\sim}10.9$ GHz Band has been designed using commercial $0.35-{\mu}m$ CMOS technology. This proposed circuit is consisted of the parallel construction of the typical NMOS and PMOS cross-coupled pair which is based on the LC tank, MOS cross-coupled pair which has same tail current of complementary NMOS and PMOS, and output buffer. The designed LC VCO, which is according to proposed structure in this paper, takes a 29% improvement of the wide tuning range as 8 GHz to 10.9 GHz, and a 6.48mW of low power dissipation. Its core size is $270{\mu}m{\times}340{\mu}m$ and its phase noise is as -117dBc Hz and -137dBc Hz at 1-MHz and 10-MHz offset, respectively. FOM of the new proposed LC VCO gets -189dBc/Hz at a 1-MHz offset from a 10GHz center frequency. This design is very useful for the 10Gb/s clock generator and data recovery integrated circuit(IC) and SONET communication applications.

Design of an NMOS-Diode eFuse OTP Memory IP for CMOS Image Sensors (CMOS 이미지 센서용 NMOS-Diode eFuse OTP 설계)

  • Lee, Seung-Hoon;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.2
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    • pp.306-316
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    • 2016
  • In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

Channel characteristics of multi-path power line using a contactless inductive coupling unit (비접촉식 유도성 결합기를 이용한 다중경로 전력선 채널 특성)

  • Kim, Hyun-Sik;Sohn, Kyung-Rak
    • Journal of Advanced Marine Engineering and Technology
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    • v.40 no.9
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    • pp.799-804
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    • 2016
  • Broadband powerline communication (BPLC) uses distribution lines as a medium for achieving effective bidirectional data communication along with electric current flow. As the material characteristics of power lines are not good at the communication channel, the development of power line communication (PLC) systems for internet, voice, and data services requires measurement-based models of the transfer characteristics of the network suitable for performance analysis by simulation. In this paper, an analytic model describing a complex transfer function is presented to obtain the attenuation and path parameters for a multipath power line model. The calculated results demonstrated frequency-selective fading in multipath channels and signal attenuation with frequency, and were in good agreement with the experimental results. Inductive coupling units are used as couplers for coupling the signal to the power line to avoid physical connections to the distribution line. The inductance of the ferrite core, which depends on the frequency, determines the cut-off frequency of the inductive coupler. Coupling loss can be minimized by increasing the number of windings around the coupler. Coupling efficiency was improved by more than 6 dB with three windings compared to the results obtained with one winding.