• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.631-637
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• 2003

We have evaluated structural and electric, ferroelectric properties of PZT(30/70) thick film prepared by using 1,3-propanediol based sol-gel method on Pt/Ti/SiO$_2$/Si substrates. Rapid thermal annealing (RTA) is used to reduce the thermal stress and final furnace annealing is processed at $650^{\circ}C$. As the results of SEM analysis, we find that we get 350 nm in thickness for one coating and 1 $\mu$m for three times of coating. In the results of C-D analysis at 1 kHz, dielectric constant ($\varepsilon$$_{r}$) and dissipation factor were 886 and 0.03, respectively. C-V curve is shaped as a symmetrical butterfly. Leakage current density at 200 kV/cm is 1.23${\times}$10$^{-5}$ A/cm$^2$ and in the results of hysteresis loops measured at 150 kV/cm, the remnant polarization (P$_{r}$) and the coercive field (E$_{c}$) are 33.8 $\mu$C/cm$^2$ and 56.9 kV/cm, respectively. PZT(30/70) thick film exhibits relatively good ferroelectric, electric properties.s..

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.7-14
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• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.609-615
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• 2005

The effects of Zr/Ti concentration ratio in PLZT (10/y/z) thin films prepared by sol-gel method are investigated for the NVFRAM application. As Ti amount of Zr/Ti concentration ratio increases, the dielectric constants at 10 kHz decrease from 550 to 400, while the loss tangents increase from 0.028 to 0.053 and the leakage current densities at 170 kV/cm decrease from $1.64\times10^{-6}$ to $1.26\times10^{-7}\;A/cm^2$. In the results of hysteresis loops measured at $\pm170kV/cm$, the remanent polarization and the coercive field increase from 6.62 to $12.86{\mu}C/cm^2$ and from 32.15 to 56.45 kV/cm, respectively, according to the change from 40/60 to 0/100 in Zr/Ti concentration ratio. Fatigue and retention properties also improve much as the Zr/Ti concentration ratio change from 40/60 to 0/100. After applying $10^9$ square pulses with $\pm5V$, the remanent polarization of the PLZT (10/40/60) thin film decreases $50\%$ from the initial state while that of the PLZT (10/0/100) thin film decreases $28\%$. In the results of retention measurements of 10s s, the remanent polarization of the PLZT (10/0/100) thin film dec.eases only $10\%$ from the initial state, while that of the PLZT (10/40/60) thin film decreases $40\%$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1066-1072
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• 2005

The effects of La concentration in PLZT (z/30/70) thin film prepared by sol-gel method are investigated for the NVFRAM application. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent and the leakage current density at 100 kV/cm decrease from 0.075 to 0.025 and from $5.83{\times}10^{-7}\;to\;1.38{\times}10^{-7}\;A/cm^2,$ respectively. In the results of hysteresis loops measured at 175 kV/cm, the remanent polarization and the coercive field decrease from 20.8 to $10.5{\mu}C/cm^2$ and from 54.48 to 32.12 kV/cm, respectively, with the increase of La concentration from 0 to $10mol\%.$ After applying for $10^9$ cycles of square pulses with ${\pm}5V$ height, the remanent polarization of the PLZT (10/30/70) thin film decreases $40\%$ from the initial state, while that of the PLZT (10/30/70) thin film decreases $64\%.$.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.105-109
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• 2018

We studied graphene synthesis to porous Cu to improve the characteristics of carbon dioxide reduction of cu. Cu powders were formed through Thermal Chemical Vapor Deposition(TCVD) to Porous Cu/Graphene structures synthesized with graphene. As a result of electrochemical experiments using a 0.1 M $KHCO_3$ electrolyte at an applied potential of -1.0 V to -1.4 V, the current density of Porous Cu/Graphene was 1.8 times higher than that of Porous Cu. As a result of evaluating the product, CO and $H_2$ were generated to Porous Cu electrode. On the other hand, the product of porous Cu/Graphene produced CO, $CH_4$ and $C_2H_4$. It is considered that the graphene causes longer carbon dioxide adsorption time, which means that the intermediates formed during the reaction remain on the electrode surface for a longer time. As a result, it can be concluded that the production reaction of the C2 compound could be continuously performed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.29-37
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• 1999

In this study, we have prepared PLT thin films having various La concentrations by using sol-gel method and studied on the effect of La concentration on the electrical properties of PLT thin films. As the La concentration increases from 5mol% to 28mol%, the dielectric constant at 10kHz increases from 428 to 761, while the loss tangent decreases from 0.063 to 0.024. Also, the leakage current density at 150kV/cm has a tendency to decrease from 6.96${\mu}A/cm^2$ to 0.79${\mu}A/cm^2$. In the result of hysteresis loops of PLT thin films, the remanent polariation and the coercive field decrease from 9.55${\mu}C/cm^2$ to 1.10${\mu}C/cm^2$ and from 46.4kV/cm to 13.7kV/cm, respectively. With the result of the fatigue test on the PLT thin films, we have found that the fatigue properties are improved remarkably as the La concentration increases from 5 mol% to 28mol%. In particular, the PLT28) has paraelectric phase and its charge storage clensity and leakage current density at 5V are 134fC/${\mu}cm^2$ and 1.01${\mu}A/cm^2$, respectively. The remanent polarization and coercive field of the PLT(10) film are 6.96${\mu}C/cm^2$ and 40.2kV/cm, respectively. After applying of $10^9$ square pulses with ${\pm}5V$, the remanent polarilzation of the PLT(10) film decreases about 20% from the initial state. In the results, we conclude that the 10mol% and the 28mol% La doped PLT thin films are very suitable for the capacitor dielectrics of new generation of DRAM and NVFRAM respecitively.

• Korean Journal of Digital Imaging in Medicine
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• v.5 no.1
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• pp.64-77
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• 2002

DR has had an important fact not only in the department of radiology but also in productivity or work efficiency of a whole hospital. The environment of DR has more various parameter than CR, so it is able to supply high quality of medical services. The current environment of radiology department in each hospital has been changed from Film-Screen system to DR through Full-PACS. This hospital which uses Full-PACS became to study the proper condition of CR and DDR and how the image quality of them is expressed among general photographing systems in the DR environment. From this experiment, the image quality of DDR is better than CR under the same exposure condition. And in the DDR system, the score of image which uses AEC is a little higher than the score which doesn't use it. Especially it can be known that the function of AEC of DDR is useful to improve the image quality in the part of skull and chest. (The function of AEC : It is the tool that detects the ionized current of x-ray which goes through objects with using the ion chamber which is in the detector. Also it controls the examination of X-ray when the proper density is reached.) Because the proper degree of density can be represented by this system, the photographing can be taken much easily without consideration of the exposure condition with the thickness of various objects. From the result of this experiment, it can be known that the selection of proper exposure condition plays an important rule to gain good Image Quality. More researches will be necessary about DDR system which has potential ability in the future.