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Fatigue and Retention Characteristics of PLZT(10/y/z) Thin films with Various Zr/Ti Concentrations Ratio  

Joung Yang-Hee (여수대학교 전기공학과)
Kang Seong-Jun (여수대학교 반도체학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.9, no.3, 2005 , pp. 609-615 More about this Journal
Abstract
The effects of Zr/Ti concentration ratio in PLZT (10/y/z) thin films prepared by sol-gel method are investigated for the NVFRAM application. As Ti amount of Zr/Ti concentration ratio increases, the dielectric constants at 10 kHz decrease from 550 to 400, while the loss tangents increase from 0.028 to 0.053 and the leakage current densities at 170 kV/cm decrease from $1.64\times10^{-6}$ to $1.26\times10^{-7}\;A/cm^2$. In the results of hysteresis loops measured at $\pm170kV/cm$, the remanent polarization and the coercive field increase from 6.62 to $12.86{\mu}C/cm^2$ and from 32.15 to 56.45 kV/cm, respectively, according to the change from 40/60 to 0/100 in Zr/Ti concentration ratio. Fatigue and retention properties also improve much as the Zr/Ti concentration ratio change from 40/60 to 0/100. After applying $10^9$ square pulses with $\pm5V$, the remanent polarization of the PLZT (10/40/60) thin film decreases $50\%$ from the initial state while that of the PLZT (10/0/100) thin film decreases $28\%$. In the results of retention measurements of 10s s, the remanent polarization of the PLZT (10/0/100) thin film dec.eases only $10\%$ from the initial state, while that of the PLZT (10/40/60) thin film decreases $40\%$.
Keywords
PLZT(10/y/z); Fatigue; Retention; Leakage Current; Hysteresis Loop; Remanent Polarization;
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  • Reference
1 K. Tominage, Y. Sakashita and M, Okada, 'Ferroelectric Properties of PLZT Thin Films Prepared By MOCVD', Integrated Ferroelecterics, Vol. 5, pp. 287-291, 1994   DOI
2 K. Koyama, and T. Sakuma, 'A Stacked Capacitor with $(Ba_xSr_{1-x})TiO_3$ for 256 M DRAM', IEDM Tech. Digit., pp. 823-826, 1991
3 I. K. Yoo and S. B. Desu, 'Ferroelectric Parameters of Lead Zirconate Thin Films', Mat. Res. Soc. Symp., Proc. Vol. pp. 323-328, 1992
4 V. M. Fridkin, Ferroelectric Semiconductor, Plenum Press, 1980
5 C. J. Kim, T. Y. Kim, I. Chung and I. K. Yoo, 'The Role of Processing Parameters in Variation of Microstructure of Sol-gel Derived Lead Zirconatre Titanate Thin Films', Mat. Res. Soc. Symp. Proc, Vol. 541, pp. 399-410, 1999
6 J. S. Lee, C. S. Kim and S. K. Joo, ' Fatigue and Data Retention Characteristics of Single-Grained PZT Thin Films', ISAF 2000 Symp., pp. 129, 2000
7 Q, Y. Jiang, E. C. Subbarao and L. E. Cross, 'Effect of Composition and Temperature on Electric Fatigue of La-doped Lead Zirconate Titanate Ceramic', J. Appl. Phys., Vol. 75. No. 11. pp. 7433-7443, 1994   DOI   ScienceOn
8 C. P. de Araujo, J. F. Scott and G. W. Taylor, 'Ferroelectric thin films: synthesis and basic properties', Gordon and Breach Publishers, Amsterdam, pp. 1-8, 1996
9 Seong Jun Kang, Vladimir B. Samoilov and Yung Sup Yoon, 'Low-Frequency Response of Pyroelectric Sensors', IEEE Trans. on Ultras., Ferroelec., and Freq. Control., Vol. 45, No.5, pp. 1255-1260, 1998   DOI   ScienceOn
10 J. J. Lee and S. B. Desu, 'Retention and Imprint Properties of Ferroelectric Thin Films', Phys. State. Sol., Vol. (a)151, pp. 171-182, 1995
11 F. Wang and G. H. Heartling, 'A PLZT Optical Phase Modulator and Its Applications', Proc. of 1992 IEEE Intern. Symp. on Appl. of Ferroelec., pp. 596-599, 1992
12 A. Thomas and D. Dearson, 'Aging of Pizoelectric Barium Titanate', IEEE 6th Intern. Symp. on Appl. of Ferroelec., pp. 111, 1986
13 Seong Jun Kang and Yung Sup Yoon, 'Optical and Electrical Properties of Lanthanum-Modified Lead Titanate Thin Films with Various Lanthanum Concentrations', Jpn. J. Appl. Phys., Vol. 36, No. 7 A, pp. 4459-4465, 1997   DOI
14 K. Miura and M. Tanaka, 'Effect of Ladoping on Fatigue in Ferroelectric Perovsite Oxide', J. Appl. Phys. Vol, 35. No. 6A, pp. 3488-3491, 1996   DOI