• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.84-92
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• 2000

A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1315-1322
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• 2012

Frequency domain reflectometry diagnoses faults on electric cables by measuring the cable impedance. Time domain impedance measurement technique using an oscilloscope instead of a network analyzer is widely used for electric power cables under harsh environment or powered condition. However, impedance measurement in the time domain shows inaccuracy as the frequency increases due to several parasitic impedances, which results in the poor resolution of fault points. This paper presents the accuracy enhancement technique using a module with an operational amplifier and an error calibration method in the time domain impedance measurements, which is confirmed by comparing the cable impedance measurement results.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Journal of IKEEE
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• v.18 no.2
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• pp.192-197
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• 2014

In this paper, $3^{rd}$ SDM with FDPA(Feedback Delay Pass Addition) technique to improve the input range is proposed. Conventional architecture with $3^{rd}$ transfer function is just made as adding a digital delay path in $2^{nd}$ SDM architecture. But the input range is very small because feedback path into the first integrator is increased. But, proposed architecture change feedback path into the first integrator to the second integrator, so input range could be improved about 9dB. The $3^{rd}$ SC SDM with only one operational amplifier was implemented using double-sampling technique. Simulation results for the proposed SDM designed in $0.18{\mu}m$ CMOS technology with power supply voltage 1.8V, signal bandwidth 20KHz and audible sampling frequency 2.8224MHz show SNR(Signal to Noise Ratio) of 83.8dB, the power consumption of $700{\mu}W$ and Dynamic Range of 82.8dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.151-151
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 마이크로파 또는 밀리미터파 등과 같은 고주파 대역의 통신시스템에 널리 사용되는 전자소자로 각광받고 있다. GaN HEMT는 AlGaN/GaN 또는 AlGaN/InGaN/GaN 등과 같은 이종접합구조(heterostructure)로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 캐리어 구속효과(carrier confinement) 및 이동도의 향상이 가능하다. 또한 높은 2DEG 채널의 면밀도(sheet concentration) 와 전자의 포화 속도(saturation velocity)를 바탕으로 고출력 동작이 가능하여 차세대 이동통신용 전력 증폭기로 주목받고 있다. 그러나 이론적으로 우수한 특성과 달리, 실제 소자에서는 epi 성장시의 결함이나 전위, 표면 상태에 따른 2DEG 감소 등의 영향으로 이론보다 높은 누설 전류와 낮은 항복 전압 특성을 가진다. 특히, 기존의 GaN HEMT 구조에서는 Drain-Side Gate Edge에서의 전계 집중이 항복 전압 특성에 미치는 영향이 크다. 본 논문에서는 이러한 문제를 해결하기 위해 Trapezoidal Gate구조를 이용하여 Drain 방향의 Gate Edge가 완만히 변하는 구조를 제안하였다. 이를 위해 $ATLAS^{TM}$ 전산모사 프로그램을 이용하여 Trapezoidal Gate 구조를 구현하여 형태에 따른 전류-전압 특성 및 소자의 스위칭 특성 및 Gate 아래 채널층에 형성되는 Electric Field의 분산을 조사하고, 이를 바탕으로 고속 동작 및 높은 항복 전압을 갖는 AlGaN/GaN HEMT의 최적화된 구조를 제안하였다. 새로운 구조의 Gate를 적용한 AlGaN/GaN HEMT는 Gate edge에서의 전계를 분산시켜 피크 값이 감소되는 것을 확인하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.25-33
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• 1998

In this paper, we describe a single-gate MESFET mixer at PCS(Personal Communication Service) frequency band. The PCS frequency band is 1965~2025 MHz in FR and 140 MHz in IF irrespectly. The design of the mixer was executed by microwave simulator, EEsof Libra. The matching network is consisted of rectangular inductor, MIM capacitor and open stub. The ma- nufacture work was accomplished by the micro-pen and wedge-bonder. The mixer showed $6.69\pm0.65$ dB of conversion gain, $-14.9\pm3.5$dB of RF reflection coefficient and 57.83 dB of LO/IF isolation at 10 dBm of LO power when LO frequency is 1855 MHz. When this mixer is used at PCS terminal, IF-amplifier which compensates the conversion loss of diode mixer may be omitted.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.11
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• pp.928-931
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• 2017

This paper presents a 2 GHz pulse generator in balanced configuration for ground penetrating radar(GPR). In order to improve the input and output matching, the pulse generator is designed in balanced configuration with $90^{\circ}$ hybrid couplers. The designed pulse generator was fabricated using PCB process. The fabricated pulse generator draws 1 mA current from a 5 V power supply with 27.6 % efficiency. The measured output voltage swing is $3.7V_{pp}$ at 100 MHz pulse repetition frequency(PRF). The pulse width is 2 ns and the input and output return loss is more than 10 dB at the operating frequency of 1.7~2.6 GHz.

• Journal of Satellite, Information and Communications
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• v.7 no.1
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• pp.75-81
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• 2012

This study is to design the transmitter and receiver of short range UWB(Ultra Wide Band) imaging radar that is able to display high resolution radar image for front area of a UGV(Unmanned Ground Vehicle). This radar can help a UGV to navigate autonomously as it detects and avoids obstacles through foliage. The transmitter needs two transmitters to improve the azimuth resolution. Multi-channel receivers are required to synthesize radar image. Transmitter consists of high power amplifier, channel selection switch, and waveform generator. Receiver is composed of sixteen channel receivers, receiver channel converter, and frequency down converter, Before manufacturing it, the proposed architecture of transceiver is proved by modeling and simulation using several parameters. Then, it was manufactured by using industrial RF(Radio Frequency) components and all other measured parameters in the specification were satisfied as well.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.6
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• pp.127-132
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• 2018

In this paper, a high conversion gain cascode mixer was designed in W-band and verified by the fabrication and measurements. In the high frequency band such as a W-band, the conversion loss of a mixer is increased because of the poor performance of transistors. This high conversion loss of the mixer requires additional circuits which can give an extra gain such as an RF buffer amplifier, and this can affects the linearity and stability of the overall systems. Therefore, it is necessary to maximize the conversion gain of the mixer. To maximize the conversion gain of the mixer, biases of the transistor were optimized, and output load impedance was optimized by the load-pull simulations. The designed mixer was fabricated in $0.1-{\mu}m$ GaAs pHEMT technology and verified by the measurements. The measurement results shows a maximum conversion gain of -4.7 dB at W-band and an input 1-dB compression point of 2.5 dBm.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.1
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• pp.35-43
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• 2022

In this paper, a study was conducted to produce 20W by combining a 10W MMIC and raising the unit power amplifier to 100W SSPA by combining the 8-way spatial coupler. SSPA requires low-loss, high-efficiency coupling techniques to meet high output with the output of a single element relatively low compared to TWTA. Designed and produced in this paper, the SSPA was manufactured as a 100W SSPA by mounting eight 20W high-power amplification modules in an 8-way spatial coupler with a reflection loss of 20dB or more and an excellent coupling efficiency of 94% or more. When -10dBm was applied, it was 112.2~169.8W at 20kHz 20%, 125.9~173.8W at 400kHz 40%, 117.5~162.2W at 800kHz 40%, showing performance of over 60dB and over 100W in all three PRF conditions.