• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.8
• /
• pp.1817-1823
• /
• 2009

A design of cascaded distributed amplifier with a broadband amplification is described in this paper. A medium power device with 23dBm, max output power under the optimal narrow-band power matching condition is adopted for the design and fabrication of the cascaded distributed amplifier. In general, conventional distributed amplifiers with the parallel connected input ports have a low gain, and previous cascaded distributed amplifiers show a relatively low output power of 10dBm at most, which is the upper limit of small signal amplification. However, the cascaded distributed amplifier in this paper shows the gain of $18.15{\pm}0.75dB$ and output power of 20dBm over $300MHz{\sim}2GHz$ from the measurement, so it can be well adopted as a wideband driver amplifier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.1
• /
• pp.92-95
• /
• 2016

In this paper, an UHF-band 1 kW solid-state pulsed power amplifier was designed and implemented for the thermoacoustic imaging(TAI) at 900 MHz. The designed power amplifier has a pulse width of $80{\mu}s$ and a duty cycle of 1 % for short-pulse operation. The overall amplifier was implemented by combining of 16 single-power amplifiers adopting MRFE6P9220HR3 LDMOSFET using wilkinson power dividers. The solid-state pulsed power amplifier shows 25 % drain efficiency with a gain of 76.2 dB when the output power is 60.2 dBm for a -16 dBm input power at center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.3
• /
• pp.264-272
• /
• 2009

In this paper, a Ka-band 10 W power amplifier module is designed and fabricated using MIC(Microwave Integrated Circuit) module technology which combines multiple power MMIC(Monolithic Microwave Integrated Circuit) chips on a thin film substrate. Modified Wilkinson power dividers/combiners are used for millimeter wave modules and CBFGC-PW-Microstrip transitions are utilized for reducing connection loss and suppressing resonance in the high-gain and high-power modules. The power amplifier module consists of seven MMIC chips and operates in a pulsed mode. for the pulsed mode operation, a gate pulse control circuit supplying the control voltage pulses to MMIC chips is designed and applied. The fabricated power amplifier module shows a power gain of about 58 dB and a saturated output power of 39.6 dBm at a center frequency of the interested frequency band.

• Journal of the Korean Professional Engineers Association
• /
• v.10 no.2
• /
• pp.27-34
• /
• 1977

The principle, performance and applications of the unique Class-D power amplifier, having power conversion efficiency of 100% in ideal case, have been described.

• 한국ITS학회:학술대회논문집
• /
• v.2006 no.10
• /
• pp.304-307
• /
• 2006

• Journal of Satellite, Information and Communications
• /
• v.12 no.4
• /
• pp.115-119
• /
• 2017

Intermodulation distortion degrades the S/N(signal-to-noise) of the original signal and also affects the adjacent channels. Intermodulation distortion is mainly caused by the nonlinear characteristics of the power amplifier. If the power amplifier with nonlinear characteristics has a memory effect, the intermodulation distortions occurred in the power amplifier are generated in various and complex forms. The predistorter is used as a way to improve intermodulation distortions. In order to efficiently utilize the performance of the predistorter, the memory effect of the power amplifier must be reduced. In this paper, we describe the design method of bias circuit to reduce the memory effect in power amplifiers. To reduce the memory effect, the bias circuit must have a high impedance for the signal and a low impedance for the envelope(modulating signal) and the second harmonic component of the signal. To verify the performance of the bias circuit designed considering the memory effect, a power amplifier operating at 170 ~ 220MHz was designed and implemented. The designed bias circuit has a large impedance in the operating frequency band and low impedance in the envelope signal and the second harmonic of the signal. As a result of the performance measurement, it was found that the asymmetric intermodulation distortion component is improved by 3.7dB.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.2
• /
• pp.422-427
• /
• 2005

In this paper, Doherty amplifier is designed by the need of improving the linearity and efficiency of wireless network and repeater for WCDMA. It is designed to maintain the high linearity and efficiency at the low efficiency period of the power amplifier after analyzing Doherty technique using the active load-pull in condition of the high efficiency power amplifier implementation according to the variation of input power. CW 1-tone experimental results at the WCDMA frequency 2.11$\~$2.17 CHz shows that Doherty amplifier, which achieves pore. add efficiency(PAE) 50$\%$ at 6dB back off the point from maximum output power 52.3dBm, obtains higher efficiency of 13.3$\%$ than class AB. finding optimum bias point after adjusted gate voltage, Doherty amplifier shows that IMD3 improves 4dB.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.2 s.332
• /
• pp.75-80
• /
• 2005

In this paper, 2-stage power amplifier has been designed for 5.8GHz wireless LAN application. The power amplifier PldB output power has 21.6dBm at 5.8GHz frequency. Also the power amplifier shows 17.6dB gain and -17.8dB input return loss at 5.725GHz to 5.825GHz. The OFDM modulation and transmission block have been modeled in order to analyse the relationship between the power amplifier distortion and output ACPR for the IEEE 802.11a wireless LAN. The nonlinear characteristic of the power amplifier has been modeled as AM-to-AM and AM-to-PM using the behavioral model, and the output spectrum is analysed with the phase distortion variation. Also, amplifier back-off value from PldB to satisfy the required IEEE 802.11a standard spectrum mask has been simulated with phase distortion, and the simulation data have been compared to the measurement result collected by using the pre-distortion technique.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.2
• /
• pp.83-90
• /
• 2000

A simple low-cost and small size 1.88-198 GHz Band RF power amplifier module is developed for IMT2000 repeater. The power amplifier consists of two stage amplifiers that the first stage amplifier is drive amplifier using discrete type P-HEMT (ATF-34143, 800 micron gate width, Agilent Technologies) and the second is power amplifier with 300Bm 1dB gain compression point using GaAs FET(EFA240D-SOT89, 2400 micron gate width, Excelics Semiconductor). this power amplifier module feature a 29.5dBm 1dB gain compression point, 29.5dB gain, 42dBm 3rd order intercept point(OIP3) and -10dB/-l2dB input/output return loss over the 1880-1980 MHz. This PA module is fully integrated using MIC technology into a small size and design by full nonlinear design technologies. The dimensions of this PA module are 42(L) $\times$ 34(W) mm.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.9 s.339
• /
• pp.49-56
• /
• 2005

Memory effect, which influence the performance of Doherty amplifier, become more significant and critical in designing these circuits as the modulation signal bandwidth and operation power level increase. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a Doherty amplifier's distortion generation. Also this raper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. This expression has been used in the construction of an electrothermal model for the Doherty amplifier. Parameters for the nelv proposed behavior model were determined from the Doherty amplifier measurements obtained under different excitation conditions. This study led us to conclude that the effects of the transistor self-heating phenomenon are important for signals with wideband modulation bandwidth(ex. W-CDMA or UMTS signal). Doherty amplifier with electrothermal memory effect compensator enhanced ACLR performance about 20 dB than without electrothemal memory effect compensator. Experiment results were mesured by 60W LDMOS Doherty amplifier and electrothermal memory effect compensator was simulated by ADS.