• Applied Chemistry for Engineering
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• v.29 no.3
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• pp.330-335
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• 2018

A new approach for the fabrication of organic-organic conducting composite thin films using simultaneous co-vaporization vapor phase polymerization (SC-VPP) of two or more monomers that have different polymerization mechanisms (i.e., oxidation-coupling polymerization and radical polymerization) was reported for the first time. In this study, a PEDOT-PSMA composite thin film consisting of poly(3,4-ethylenedioxythiophene)(PEDOT) and poly(styrene-co-maleic anhydride)(PSMA) was prepared by SC-VPP process. The preparation of organic-organic conductive composite thin films was confirmed through FT-IR and $^1H-NMR$ analyses. The surface morphology analysis showed that the surface of PEDOT-PSMA thin film was rougher than that of PEDOT thin film. Therefore, PEDOT-PSMA exhibited lower electrical conductivity than that of PEDOT. But the conductivity can be improved by adding 2-ethyl-4-methyl imidazole as a weak base. The contact angle of PEDOT-PSMA was about $50^{\circ}$, as compared to $62^{\circ}$ for PEDOT. The demonstrated methodology for preparing an organic-organic conductive hybrid thin film is expected to be useful for adjusting intrinsic conductive polymer (ICP)'s surface properties such as mechanical, optical, and roughness properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.59-65
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• 2006

Al-doped and F-doped ZnO (ZnO : Al & ZnO : F) thin films were coated onto glass substrate by sol-gel method. These films showed c-axis orientation in common, but different I(002)/[I(002) + I(101)] and FWHM (full width at half-maximum). In particular, the grain size of the ZnO : Al films decreased with the increase in the Al-doping concentration, while for the ZnO : F films the grain siae increased up to F 3 at% and then decreased. For the electrical properties, Hall effect measurement was used. The resistivity of the ZnO : Al films and the ZnO : F films were, respectively, $2.9{\times}10^{-2}{\Omega}cm$ at Al 1 at% and $3.3{\times}10^{-1}{\Omega}cm$ at F 3 at%. Moreover compared with ZnO:Al films, ZnO:F films have lower carrier concentration (ZnO : Al $4.8{\times}10^{18}cm^{-3}$, ZnO : F $3.9{\times}10^{16}cm^{-3}$) and higher mobility (ZnO : Al $45cm^2/Vs$, ZnO : F $495cm^2/Vs$). For average optical transmittances, ZnO : Al thin films have $86{\sim}90%$ and ZnO : F films have $77{\sim}85%$ comparatively low.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.21-27
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• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2003.04a
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• pp.35-35
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• 2003

)를 금속와이어에 인가하면 저항발열에 의해 와이어가 미세한 입자나 금속증기상태로 폭발하는 현상을 이용한 것으로 기상합성법에 속한다고 할 수 있다. 선폭법은 다른 제조법에 비해 공정이 간단하여 생산비용이 저렴하며, 원재료의 조성을 갖는 분말의 합성과 금속간화합물, 융점차이가 나는 재료의 합금화 등이 가능하다. 인가에너지의 크기와 폭발 시 분위기를 제어함으로써 분말의 평균크기와 분포 제어 또한 가능하다. 본 연구는 러시아의 우수한 기초기술을 바탕으로 Pb-Sn계 합금은 전기폭발법으로 극미세분말을 제조하였으며, 분말의 형상, 상 화학조성의 변화를 조사하였다. 본 실험에 사용된 Sn-Pb계(All-Union State Standard 1499-70, 0.53mm)합금와이어는 자동시스템(1-0.6Hz)에 의해 챔버안으로 공급되었다. 이 때 임계폭발 와이어 길이는 50-80nm으로 실험을 행하였다. 챔버 압력은 1.4~2.0atm으로 유지하였다. 제조된 분말의 특성은 XRD, XRPES, SEM등을 이용하여 분말의 형상과 상, 화학조성, 표면분석을 행하였으며 DSC, TGA, BET분석을 통하여 온도변화에 따른 금속분말의 열량변화, 질량변화, 비표면적을 측정하였다. 제조된 Sn-Pb계 분말은 모두 평균 입도 117nm~220nm의 구형형상이었다. 이때 합금분말의 조성은 51.17~63.21 at%Sn, 35.47~46.37 at%Pb로 나타났다. 와이어에 인가되는 비에너지(W/Wc)가 감소된에 EK라 표면층의 Pb함량이 증가함을 보였다. 이는 와이어 내부 저항의 감소로 인한 공정시간의 지연과 Sn, Pb의 확산계수 차이에 의한 것으로 사료된다. 열분석 결과, Sn~Pb계 화합물의 융점은 167~$169^{\circ}C$로 관찰되었으며, $10^{\circ}C$/min로 $920^{\circ}C$까지 승은 하였을 때 17.1~18 wt%의 질량증가를 보였다.TEX>계 나노복합분말이 얻어짐을 알 수 있었다. 이 때 X션 회절피크의 line broadening으로부터 복합분말의 Fe 명균 결정립 크기는 24nm로 초미세 결정럽의 분말합금이었다. 포화자화값은 볼밀처리에 따라 점점 증가하여 MA 30시간에는 20.3emu/g로 포화됨을 알 수 있었다. 또한 보자력 Hc는 MA초기단계에 350e로 매우 낮으나 30시간 후에는 Hc값이 2600e로 매우 큰 값을 나타내었다. 이것은 환원반응결과 초기에 생성된 Fe의 결정립이 비교적 크고 결정결함이 적으나 볼밀처리를 30시간까지 행하면 Fe 결정렵의 미세화 빛 strain 증가로 magnetic hardening이 일어나기 때문인 것으로 사료된다.길이가 50, 30cm인 압출재를 제조하였다. 열간압출한 후의 미세조직을 광학현미경으로 압출방향에 평행한 방향과 수직방향으로 관찰하였고, 열간 압출재 이방성을 검토하기 위하여 X선 회절분석을 실실하여 결정방위를 확인하였다. 전기 비저항 및 Seebeck 계수 측정을 위하여 각각 2$\times$2$\times$10$mm^3$ 그리고 5$\times$5$\times$10TEX>$mm^3$ 크기의 시편을 준비하였다.준비하였다.전류를 구성하는 주요 입자의 에너지 영역(75~l13keV)에서 가장 높은(0.80) 상관계수를 기록했다. 넷째, 회복기 중에 일어나는 입자들의 유입은 자기폭풍의 지속시간을 연장시키는 경향을 보이며 큰 자기폭풍일수록 현저했다. 주상에서 관측된 이러한 특성은 서브스톰 확장기 활동이 자기폭풍의 발달과 밀접한 관계가 있음을 시사한다.se that were all low in two aspects, named "the Nonsignificant group". And the issues were high risk perception in general setting and lo

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.12
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• pp.5412-5419
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• 2011

The need is growing for high-speed spindle because various equipment are becoming more precise, miniaturization and high speed with the development of industries. Air-lubricated dynamic bearings are widely used in the optical lithographic manufacturing of wafers to realize nearly zero friction for the motion of the stage. Air-lubricated dynamic bearing can be used in high-speed, high-precision spindle system and hard disk drive(HDD) because of its advantages such as low frictional loss, low heat generation, averaging effect leading better running accuracy. In the paper, numerical analysis is undertaken to calculate the performance of air-lubricated dynamic bearing with herringbone groove. The static performances of herringbone groove bearings which can be used to support the thrust load are calculated. Electrochemical micro machining($EC{\mu}M$) which is non-contact ultra precision machining method has been developed to fabricate the air-lubricated dynamic bearing and optimum parameters which are inter electrode gap size, concentration of electrolyte, machining time are simulated using numerical analysis program.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.15-20
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• 2010

In this study, AZO (Al: 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5~20 mTorr), $O_2$ gas flow rate(0~3%) and the fixed substrate temperature of 200 f by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 nm) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3% of $O_2$ gas flow rate. The optical transmittance of AZO thin films is measured as 80% in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the $O_2$ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration ($2.63\;{\times}\;10^{20}\;cm^{-3}$) and the minimum resistivity ($4.35\;{\times}\;10^{-3}\;{\Omega}cm$) are obtained for the AZO thin film fabricated at 5mTorr of working pressure and 0% of $O_2$ gas flow rate.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.142-150
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• 2023

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9×10^-4 Ω·cm and about 1.0×10^-4 Ω·cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 ℃.