• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.300-306
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• 2011

We report the surface distribution of metal (Ag, Au) nanoparticles grown on polarity-patterned ferroelectric substrates by photochemical reaction. Single crystal periodically polarity-patterned $LiNbO_3$(PPLN) was used as a ferroelectric substrate. The nanoparticles were grown by ultra-violet (UV) light exposure of the PPLN in the aqueous solutions including metas. The surface distribution of the grown nanoparticles were measured by atomic force microscopy and identification of the orientation of the polarity of the ferroelectric surface was performed by piezoelectric force microscopy. The Ag- and Au-nanoparticles grown on +z polarity regions are larger and denser than that on -z polarity regions. In particlur, the largest and denser Ag-nanoparticles were grwon on the polarity boundary regions of the PPLN while Au-nanoparticles were not specifically grown on the boundary regions. Thus, we found that the size and position of metal nanoparticles grown on ferroelectric surfaces can be controlled by UV-exposure time and polarity pattern structures. Also, we discuss the difference of the surface distribution of the metal nano-particles depending on the polarity of the ferroelectric surfaces in terms of surface band structures, reduced work fucntion, and inhomogeneous electric field distribution.

• Journal of Korea Water Resources Association
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• v.47 no.8
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• pp.717-728
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• 2014

In this study, we developed a depth-damage function based on flood damage survey with focusing on building damage in urban area. We designed items for the questionnaire survey to develop a depth-damage function which estimates the amount of damage based on inundation depth targeting Dongducheon, Korea, which has experienced severe inundation damage due to significant flooding in July 2011. Based on the survey of the area, we developed a depth-damage function and used this to estimate the real amount of damage on buildings in the inundation area. To assess the damage on buildings, we categorized buildings into two groups; namely residential buildings and commercial buildings. Also, in order to calculate the real amount of damage caused by flooding, properties and detailed damaged items were sub-divided into two groups for the survey; facilities loss (wall paper, floor paper, painting, electrical facilities, and boilers) and furnishing loss (furniture, electronic products, and daily necessities. We expect this study on the process for developing depth-damage function and on the investigation research for flooded area to help in the efficient implementation of all kinds of disaster management policies and the attainment of a society safe from disaster.

• Proceedings of the Mineralogical Society of Korea Conference
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• 2002.10a
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• pp.153-169
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• 2002

국내 대리석류 석재자원은 지질시대 및 지구조별로 선캠브리아기의 경기육괴와 영남육괴, 시대미상의 옥천대 남서부, 캠브리아-오오도비스기의 옥천대 북동부 그리고 일부 기하시대의 옥천대 북동부 등으로 분류될 수 있다. 전자는 변성퇴적암류내에 협재된 결정질 석회암, 화강암질 편마암내 포획된 결정질 석회암 등s으로 경기육괴의 포천, 김포, 온수리, 목계와 신림도폭 그리고 영남육괴의 춘양, 현동, 울진, 중평동 장기리와 장계도폭 등이 해당된다. 시대미상암류는 옥천대 남서부로서 목계 충주 괴산, 강경, 남원과 송정도폭, 그리고 캠브리아기는 풍촌석회암으로 임계, 호명, 서벽리도폭 등이 해당된다. 오오도비스기는 정선석회암이 분포하는 석병산, 평창, 정선과 임계도폭, 화천리층이 분포하는 문경도폭, 그리고 황강리도폭 등이 해당한다. 기타시대는 시대미상의 각력질 석회암과 상부석탄기의 홍점층군내 협재하는 결정질 석회암으로 이들은 각각 정선도폭과 석병산도폭에 위치한다. 선캠브리아기, 시대미상, 캠브리아기 및 오오도비스기 대리석류의 물성 중에서 흡수율과 공극율은 선캠브리아기, 오오도비스기 시대미상과 캠브리아기의 순으로 점차 감소한다 이들의 공극율은 비중에 대하여 대체로 불규칙하며, 흡수율은 공극율에 대하여 거의가 뚜렷한 정의 상관관계를 이룬다. 압축강도는 공극율에 대하여 다소 불규칙한, 그리고 인장강도에 대하여 정의 상관관계를 이룬다. 그리고 마모경도는 압축강도와 인장강도에 대하여 대체로 뚜렷한 정의 경향을 각각 보인다. 이들 대리석류는 선캠브리아기 중경암-경암, 시대미상 중경암-경암, 캠브리아기 거의가 중경암-경암, 그리고 오오도비스기는 경암에 각각 해당한다.역할을 충실히 담당하고 있는 것으로 분석되었다. 그러나 과학기술의 급격한 발달, 소비패턴의 변화, 생활환경과 삶의 질을 중시하는 새로운 가치관의 확산 등으로 광업의 역할도 새로운 변화의 전기를 맞이하고 있음을 볼 수 있다. 국내광업이 21C 급변하는 산업환경에 적응하여 생존하기 위해서는 각종 첨단산업에서 요구하는 소량 다품종의 원료광물을 적기에 공급 할 수 있는 전문화된 기술력을 하루속히 확보해야 하며, 이를 위해 고품위의 원료광물 확보를 위한 탐사 및 개발을 적극 추진하고 가공기술의 선진화를 위해 선진국과의 기술제휴 등 자원산업 글로벌화 정책이 절실히 요구되고 있음을 알 수 있다. 또한 삶의 질을 향상시키려는 현대인의 가치관에 부합하기 위해서는 각종 소비제품의 원료를 제공하는 광업의 본래 목적 이외에도 자연환경 훼손을 최소화하며 개발 할 수밖에 없는 구조적인 어려움에 직면할 수밖에 없다. 이처럼 국내광업이 안고 있는 여러 가지 난제들을 극복하기 위해서는 업계와 정부가 합심하여 국내광업 육성의 중요성을 재인식하고 새로운 마음가짐으로 관련 정책을 수립 일관성 있게 추진해 나가야 할 것으로 보인다.의 연구 결과를 요약하면 다음과 같다. 첫째, 브랜드 이미지와 서비스 품질과의 관계에서 브랜드이미지는 서비스 품질의 선행변수가 될 수 있음을 증명하였으며 4개 요인의 이미지 중 사풍이미지를 제외한 영업 이미지, 제품 이미지, 마케팅 이미지가 서비스 품질에 영향을 미치고 있음을 알 수 있다. 둘째, 지각된 서비스 품질과 가격 수용성과의 관계에서, 서비스 품질은 최소 가격에 신뢰서비스 요인에서 정의 영향을 미치고 있으나 부가서비스, 환경서비스에서는 역의 영향을

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.349-354
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• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Journal of the Korean Chemical Society
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• v.23 no.4
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• pp.243-247
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• 1979

Kinetics of the reaction of phenethyltosylate with substituted pyridines at 50, 60 and 70$^{\circ}C$ in acetonitrile were investigated by an electric conductivity method. The effects of substituents on the reaction of phenethyltosylate with pyridines were discussed. The rates of reaction were increased with electron donating power of substituents of pyridines. The isokinetic relationship was shown $E_{\alpha}$ and ${\Delta}S^{\neq}$, it's temperature was 240$^{\circ}$K. Bronsted plots were excellent linear except for 4-amino pyridine given by the following equation, logk=O. 22pKa-3.71 (r=O. 986). According to a plot of log k against Hammett substituent constants, the Iinearity was good except for bamino pyridine too, log k= -1.330${\sigma}$+0.08 (r= -0.987). In both cases, deviation of 4-amino pyridine from linearity was considered to solvent effect, resonance effect and ${\sigma}$ value itself. From all the above results, this reaction was found typical $S_N2$ reaction which the rates of reaction was determined by C…N bond formation at transition state.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.495-502
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• 2005

Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.261-265
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• 2010

In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.135-138
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• 2007

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.