• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.79-90
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• 2007

Prototype of $800{\ell}$ vacuum web coater (Vic Mama) consisting of ion source with low energy less than 250 eV for high speed surface modification and 4 magnetron sputter cathodes was designed and constructed. Its performance was evaluated through fabricating the adhesiveless flexible copper clad laminate (FCCL). Pumping speed was monitored in both upper noncoating zone pumped down by 2 turbo pumps with 2000 l/sec pumping speed and lower surface modification and sputter zone vacuumed by turbo pumps with 450 1/sec and 1300 1/sec pumping speed respectively. Ion current density, plasma density, and uniformity of ion beam current were measured using Faraday cup and the distribution of magnetic field and erosion efficiency of sputter target were also investigated. With the irradiation of ion beams on polyimide (Kapton-E, $38{\mu}m$) at different fluences, the change of wetting angle of the deionized water to polyimide surface and those of surface chemical bonding were analyzed by wetting anglometer and x-ray photoelectron spectroscopy. After investigating the deposition rate of Ni-Cr tie layer and Cu layer was investigated with the variations of roll speed and input power to sputter cathode. FCCL fabricated by sputter and electrodeposition method and characterized in terms of the peel strength, thermal and chemical stability.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.47.2-47.2
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• 2011

광전환 효율 20% (AM1.5G) 이상의 고효율 화합물 박막태양전지의 광흡수층으로 많은 관심을 받고 있는 $Cu(In,Ga)Se_2$ (CIGS) 태양전지의 광흡수층은 다양한 공정에 의해 제조가 가능하다. 현재 고효율 CIGS 셀 생성을 위해 널리 사용되고 있는 CIGS 흡수층 성장공정은 "co-evaporation (동시증발법)"과 2-step 공정이라 불리는 "precursorselenization(전구체-셀렌화)" 방법이다. 동시증발법은 개별원소 Cu, In, Ga, Se들을 고진공 분위기에서 고온(550~600$^{\circ}C$) 기판위에 증착하는 방법으로 소면적에서 가장 좋은 효율(~20%)을 보이는 공정이다. 하지만, 고온, 고진공 공정조건과 대면적 증착시 온도 및 조성 불균일 등의 문제점 등으로 상용화에 어려움이 있다. 전구체-셀렌화 공정은 1단계에서 다양한 방식(예: 스퍼터링, 전기도금, 프린팅 등) 방식으로 CuGaIn 전구체를 증착하고, 2단계에서 고온(550~600$^{\circ}C$)하에 H2Se gas 혹은 Se vapor와 반응시켜 CIGS를 생성한다. 일본의 Showa Shell와 Honda Soltec 등에 의해 이미 상업화 되었듯이, 저비용 대면적으로 상업화 가능성이 높은 공정으로 평가되고 있다. 하지만, 2단계에서 사용되는 H2Se 및 Se vapor의 유독성, 기상 Se과 금속전구체 간의 느린 셀렌화 반응속도, 셀렌화반응 후 생성된 CIGS 박막 두께방향으로의 Ga 불균일 분포, 생성된 CIGS/Mo 계면 접착력 저하 등의 문제점들이 개선, 해결되어야만 상업화에 성공할 수 있을 것이다. 본 연구에서는 Se layer가 코팅된 금속전구체의 셀렌화 반응메카니즘을 in-situ high-temperature XRD를 이용하여 연구하였다. 금속전구체는 스퍼터링, 스프레이 등 다양한 방법으로 제조되었고, 반응메카니즘 연구결과를 바탕으로 Se 코팅된 금속전구체를 이용한 급속열처리 공정의 최적화를 시도하였다.

• Korean Journal of Materials Research
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• v.19 no.11
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• pp.596-600
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• 2009

Electrochemical deposition characteristics of CdSe nanorods were investigated for hybrid solar cell applications. CdSe nanorods were fabricated by electrochemical method in $CdSO_4$ and $H_2SeO_3$ dissolved aqueous solution using an anodic aluminum oxide (AAO) template. Uniformity of CdSe nanorods was dependent on the diameter and the height of holes in AAO. The current density, current mode, bath composition and temperature were controlled to obtain a 1:1 atomic composition of CdSe. CdSe nanorods deposited by direct-current method showed better uniformity compared to those deposited by purse-current and/or purse-reverse current methods due to the bottom-up filling characteristics. $H_2SeO_3$ concentration showed more significant effects on pH of solution and stoichiometry of deposits compared to that of $CdSO_4$. A 1:1 stoichiometry of uniform CdSe nanorods was obtained from 0.25M $CdSO_4-5$ mM $H_2SeO_3$ electrolytes with a direct current of 10 $mA/cm^2$ at room temperature. X-ray diffraction and electron diffraction pattern investigations demonstrate that CdSe nanorods are a uniform cubic CdSe crystal.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.67-74
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• 2018

Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.81-81
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• 2010

전자 패키징은 미세화, 경량화, 저가화를 지향하고 신뢰성의 향상을 위해 발전해 왔다. 이러한 경향은 전자부품 자체의 성능 향상 뿐 아니라 전자부품을 장착, 고정할 수 있게 하는 인쇄회로 기판(PCB : Printed Circuit Board)의 성능에 많은 관심을 가지게 되었다. 전기적 신호의 손실을 줄이기 위해 전기, 전자 산업체에서는 가볍고 굴곡성이 우수한 연성인쇄회로기판(FPCB : Flexible PCB)과 가격이 싸고 신뢰성이 입증된 경성인쇄회로기판(RPCB : Rigid PCB)이 그 대상이다. 본 논문에서는 이 PCB중에서도 RPCB와 FPCB간의 열압착 방식으로 접합 시 전극간의 접합 양상을 보았다. 이 열압착 방식은 기존에 PCB를 접합하는데 사용하고 있는 connector를 이용한 체결법을 대체하는 기술로써 솔더를 중간층(interlayer)로 이용하여 열과 압력으로 접합하는 방식이다. 이 방식을 connector를 사용하는 방식에 비해 그 부피가 작고 I/O개수에 크게 영향 받지 않으며 자동화 공정이 쉬운 장점을 가지고 있다. 접합의 대상 중 RPCB의 경우는 무전해 니켈 금도금(ENIG : Electroless Nickle Immersion Gold)로 제작하였으며 FPCB의 경우는 ENIG와 유기보호피막(OSP : Organic solderability preservation) 처리하였다. 실험에 사용한 PCB는 $300\;{\mu}m$ pitch의 미세피치이며 솔더의 조성은 Sn-3.0Ag-0.5Cu (in wt%)과 Sn-3.0Ag (in wt%)를 사용하였다. 접합 온도와 접합 시간 그리고 접합 압력에 따라 최적의 접합 조건을 도출하였다. 접합 강도는 $90^{\circ}$ Peel Test를 통해서 측정하였으며 접합면 및 파괴면은 SEM과 EDS를 통하여 분석하였다.

• Journal of the Korean Institute of Gas
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• v.15 no.4
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• pp.27-32
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• 2011

Management of gas safety is becoming important with increasing use of gas facilities. U-safety system is being promoted as part of national management of gas, and thus real-time and in-situ gas sensor should be developed. Detection method for When the gas sensor is installed in gas conduit, explosion may be likely, because hydrocarbon gases is usually used the difference of thermal resistance between reference and working electrode. Therefore, it is required to detect the hydrocarbons, such as $CH_4$ and CO, at room temperature via electrochemically catalytic reaction. In this study, Pt nanoparticle was doped on the porous gold powder by electrolytic plating method, and then it was used as catalytic electrode for CO oxidation. For Pt/PAu electrode, approximately 21% of CO conversion was obtained. It is noted that Pt/PAu electrode could be used to react the oxidation of hydrocarbon gases at room temperature via applying of external voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.158-158
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• 2008

모바일 정보통신기기를 중심으로 실장모듈의 초소형화, 고집적화로 인해 접속단자의 피치가 점점 미세화 됨에 따라 플립칩 본딩용 접착제에 함유되는 무기충전제인 실리카 필러의 크기도 미세화되고 있다. 본 연구에서는 NCP (non-conductive paste)의 실리카 필러의 크기가 COB(chip-on-board) 플립칩 패키지의 신뢰성에 미치는 영향을 조사하였다. 실험에 사용된 실리카 필러는 Fused silica 3 종과 Fumed silica 3종이며 response surface 실험계획법에 따라 혼합하여 최적의 혼합비를 정하였다. 테스트베드로 사용된 실리콘 다이는 투께 $700{\mu}m$, 면적 5.2$\times$7.2mm로 $50\times50{\mu}m$ 크기의 Au 도금범프를 $100{\mu}m$ 피치, peripheral 방식으로 형성시켰으며, 기판은 패드를 Sn으로 finish 하였다. 기판을 플라즈마 전처리 후 Panasonic FCB-3 플립칩 본더를 이용하여 플립칩 본딩을 수행하였다. 패키지의 신뢰성 평가를 위해 $-40^{\circ}C{\sim}80^{\circ}C$의 열충격시험과 $85^{\circ}C$/85%R.H.의 고온고습시험을 수행하였으며 Die shear를 통한 접합 강도와 4-point probe를 통한 접속저항을 측정하였다.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.41-48
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• 2018

The quantitative interfacial adhesion energy measurement method of copper redistribution layer and WPR dielectric interface were investigated using $90^{\circ}$ peel test, 4-point bending test, double cantilever beam (DCB) measurement for FOWLP Applications. Measured interfacial adhesion energy values of all three methods were higher than $5J/m^2$, which is considered as a minimum criterion for reliable Cu/low-k integration with CMP processes without delamination. Measured energy values increase with increasing phase angle, that is, in order of DCB, 4-point bending test, and $90^{\circ}$ peel test due to increasing roughness-related shielding and plastic energy dissipation effects, which match well interfacial fracture mechanics theory. Considering adhesion specimen preparation process, phase angle, measurement accuracy and bonding energy levels, both DCB and 4-point bending test methods are recommended for quantitative adhesion energy measurement of RDL interface depending on the real application situations.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.284-288
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• 2008

Sn-thin film as high capacitive anode for thin film lithium-ion battery was prepared by organic-electrolyte electroplating using Sn(II) acetate. Electrolytic solution including $Li^+$ and $Sn^{2+}$ had 3 reduction peaks at cyclic voltammogram. Current peak at $2.0{\sim}2.5\;V$ region correspond to the electroplating of Sn on Ni substrate. This potential value is lower than 2.91 V vs. $Li^+/Li^{\circ}$, of the standard reduction potential of $Sn^{2+}$ under aqueous media. It is the result of high overpotential caused by high resistive organic electrolytic solution and low $Sn^{2+}$ concentration. Physical and electrochemical properties were evaluated using by XRD, FE-SEM, cyclic voltammogram and galvanostatic charge-discharge test. Crystallinity of electroplated Sn-anode on a Ni substrate could be increased through heat treatment at $150^{\circ}C$ for 2 h. Cyclic voltammogram shows reversible electrochemical reaction of reduction(alloying) and oxidation(de-alloying) at 0.25 V and 0.75 V, respectively. Thickness of Sn-thin film, which was calculated based on electrochemical capacity, was $7.35{\mu}m$. And reversible capacity of this cell was $400{\mu}Ah/cm^2$.