• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2117-2120
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• 2004

본 논문은 UV-LIGA 공정, 후막공정을 이용한 바이오센서용 magnetic bead 분리 장치의 제작 기술개발에 관한 것이다. 최근 MEMS(microelectromechanical system) 기술을 이용한 바이오센서에 대한 연구가 활발하게 이루어지고 있다. 이러한 바이오센서 분야 중 혈액이나 다른 원하지 않는 물질을 분리해 주는 분리장치는 MEMS 기술을 이용해 구현이 매우 어려운 부분 중에 하나이다. 기존의 UV-LIGA 공정과 도금법을 이용한 마이크로 전자석 제작하여 분리장치를 제작하는 경우 제작 공정이 매우 복잡하며 매우 많은 공정비용을 요구한다. 이러한 단점을 해결하기 위해 본 논문에서는 Sr 계연의 고분자 자석과 3차원 PDMS(poly-dimethylsiloxane) 마이크로 채널 공정을 이용해 분리장치를 제작하였다. 제작된 분리장치는 $0{\sim}30{\mu}{\ell}$/min 의 속도에서 유체를 흘렸을 90% 이상의 분리 효율을 나타냈다. 개발된 분리 장치는 연재질의 PDMS 로 제작되어 일회용 바이오센서에 적용이 가능하다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.258-259
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• 2015

$CuInSe_2$(CIS)층에 Na의 첨가는 태양전지 셀의 효율을 향상시키는데 도움을 주는 것으로 알려져 있다. 본 연구에서는 Na이 없는 코닝 유리 기판에 Mo/Mo-Na 이중 박막을 후면 전극으로 이용하여 CIS층의 Na소스로 작용하도록 하였다. CIS/Mo/Mo-Na 다층 박막을 제조한 후, AES분석을 통해 Na은 Mo/Na층과 CIS층의 계면과 CIS층의 표면에 주로 분포하는 것을 알 수 있었다. XRD분석을 통해서 Na함량이 증가할수록 Mo박막의 우선성장면 (110)면의 피크는 감소하였고, CIS의 우선 성장면인 (112)면은 점차 증가하여 Mo-Na층이 200 nm일 때, 최댓값을 가지고 이후로는 감소하는 경향을 보인다. CIS의 결정은 기판에 수직인 방향으로 덴드라이트 성장을 한다. Mo-Na층이 200 nm까지는 밀도가 높은 결정이 성장되지만, 그 이상으로 Na농도가 증가하면 결정 입자의 크기는 다소 성장하지만 밀도가 현저하게 감소한다. 이 결과들로 보아 CIS층의 Na농도조절은 Mo/Mo-Na 이중층의 두께조절을 통해 가능하며, Na이 CIS층에 초과되어 첨가되면 특성이 저하된다.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.137-143
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• 2011

The internal stress and magnetic properties (coercivity and squareness) of Ni-Fe nano thin film synthesized by electrodeposition method were studied as a function of acidic chloride bath conditions (composition and temperature) and current density. Fe deposition patterns were different depending on the temperature of the solution, the stress of film decreased with increasing the solution temperature, and the depending on the amount of Fe deposition showed a parabolic shape. The grain size of film was inversely proportional to stress of thin film. The internal stress of thin film and magnetic properties were deeply relevant, and the stress of thin film had a relationship with bath conditions and grain size of the thin film surface.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.112-117
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• 2004

본 연구에서는 쏠더를 이용한 새로운 웨이퍼 레벨 실장 기술을 제안하였고 순수 주석도금이 쏠더로서 이용되었다. 제안된 실장 기술의 가장 큰 차별성은 레고 조립처럼 어셈블리 한 후에 쏠더 리프로우를 통해 측면 접합한다는 것이다. 이런 측면 접합 기술은 기본적으로 표면 상태에 매우 둔감하다는 장점과 비아를 통한 전기적 연결 시 끝 단의 노칭(notching)에 의한 전기적 연결 끊김 문제를 해결할 수 있다. 접합강도는 전단 응력을 측정하여 평가하였고, 실장의 기밀성(Hermeticity)는 가압 헬륨 측정법을 통해서 평가되었다. 실험결과로부터 본 실장 기술은 고 수율 웨이퍼 레벨 실장 기술의 대안이며 실행 가능함을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.142-143
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• 2007

현재 양산용 태앙전지 제조에 가장 널리 쓰이는 전극형성 기술인 Screen printing 기법은 진공 증착법과 무전해 도금에 의한 방법과, 비교할 때 공정장비가 간단하고 자동화에 적합하여 70 년대 이후로 널리 사용되어 왔다. 본 실험에서는 Screen printing기법과 Porous Si을 이용한 양산형 실리콘 태양전지를 제작하여 그 특성을 평가하였으며 13.2%의 변환효율을 나타내었다.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.204-210
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• 2000

The control of dissolved aluminum concentration in the hot dip zinc galvanizing bath is greatly important in producing galvannealed steel sheets. The purpose of present study is to provide basic data for measurement of the aluminum concentration in site in hot dip zinc bath at the temperature of $460^{\circ}C\~500^{\circ}C$ using $CaF_2$ solid electrolyte sensor with three kinds of reference electrode. Good workability and stability of the sensor were confirmed with the $Bi+BiF_3$ reference electrode from the emf measurement. In order to measure the aluminum concentration in Zn-Al bath, the galvanic cell of fluorine ion was constructed with $CaF_2$ solid electrolyte as follows; $$(-)W|Zn-Al,\;AlF_3|CaF_2|Bi,BiF_3|W(+)$$. The emf measurement was made at the temperature of $460\pm10^{\circ}C$ in the Zn-Al bath. The following correlationship between aluminum concentration and emf was obtained by the least square regression analysis; $$E/mV=56.795log[\%Al]+1881.7\;R=0.9704$$,$$0.026wt\%{\leq}[\%Al]{\leq}0.984wt\%$$

• Journal of the Korean Electrochemical Society
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• v.2 no.4
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• pp.227-231
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• 1999

Disposable, amperometric glucose sensor was constructed using platinised carbon paste electrode. The sensor response was studied by amperometry and cyclic voltammetry applying sample solutions on the strip-type electrode. Platinization of screen-printed carbon paste electrode effectively improved the electrochemical reversibility of a mediator and the analytical characteristics of the sensor. The heterogeneous rate constant for $[Fe(CN)_6]^{4-/3-}$ was $1.45\times10^{-2}cm{\cdot}s^{-1}$. An applied potential of 0.3V vs. Ag/AgCl resulted in the best selectivity for glucose. The apparent Michaelis-Menten constant for glucose on the strip sensor, $K_m^{app}$, was 24.5 mM. To evaluate the analytical performance of the glucose sensor strip, a correlation study was performed with the NOVA S.P, Ultra M analyzer for 30 serum samples containing $80\~297mg/dL$ of glucose: the correlation coefficient value was 0.983. It can be seen that the strip sensor has satisfactory precision and accuracy.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.19-24
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• 2000

To make stacked chip packages far high-density packaging of memory chips used in workstations or PC severs, several lead-frames are to be connected vertically. Fer this purpose. Sn or Sn/Ag were electrochemically deposited on Cu lead-frames and their microstructures were examined by XRD and SEM. Then, two specimens were annealed at $250^{\circ}C$ for 10 min. and pressed to be joined. The shear stresses of joined lead-frames were measured fur comparison. In the case of Sn only, $Cu_3Sn$ was formed by the reaction of Sn and Cu lead-frames. In the case of Sn/Ag, besides $Cu_3Sn$. $Ag_3Sn$ was formed by the reaction of Sn and Ag. Compared to joined specimens made from Sn only, those made from Sn/Ag showed 1.2 times higher shear stress. This was attributed to the $Ag_3Sn$ phase formed at the joined interface.