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Correlation between Strain and Dielectric properties in Paraelectic $ZrTiO_4$ Thin Films ($ZrTiO_4$상유전 박막의 Strain과 유전 특성 상관성 고찰)

  • 김태석;오정민;김용조;박병우;홍국선
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.108-108
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    • 2000
  • 급증하는 무선통신 정보수요는 특히, 고주파대역 (300NHz-300GHz)에서 사용되는 공진기, 필터, 발진기 등과 같은 소자의 품질향상을 요구하고 있다. 고주파용 유전체 중 ZrTiO4 는 $\alpha$-PbO2 계열의 사방정구조를 갖고 있는 유전체로서 높은 유전율 ($\varepsilon$=40)과 높은 품질계수 (Q=1/tan$\delta$=4700 at 7GHz)를 갖고 있고, Sn 첨가시 0ppm/$^{\circ}C$의 공진주파수 온도계수를 얻을 수 있다고 보고되어 있다. 본 연구에서는 약 110$0^{\circ}C$ 이상에서 안정한 상으로 존재하는 ZrTiO4를 저온에서 증착하여 준안정한 상태로 결정화되게 한후, 유전손실 (tan$\delta$)과 유전율($\varepsilon$)을 측정하였다. 또한 증착온도와 열처리과정에 따른 박막의 us형 (Strain) 정도의 변화를 X-선 회절결과로부터 분석하였으며 이를 측정된 유전특성 값과 비교하였다. ZrTiO4 박막은 DC magnetron reactive sputter로 Zr과 Ti 타겟으로부터 high phosphorous doped Si (100) 기판위에 증착하였다. 압력은 4mTorr로 유지하고 박막의 화학양론적 조성비를 맞추기 위해 각 타겟에 가해지는 power는 Zr/Ti=500W/650W로 고정하고, 반응가스의 비율을 Ar/O2=17sccm/3.5sccm으로 유지하여 박막내에 인입되는 산소량을 제어하였다. 증착 직후와 열처리 후의 박막특성을 비교하기 위해 증착온도를 상온에서부터 $600^{\circ}C$까지 변호시키고 증착후 각각의 시편을 80$0^{\circ}C$ 산소분위기에서 2시간동안 열처리하여 시편을 준비하였다. 박막의 상형성 여부와 결정성변화는 $ heta$-2$\theta$X-선 회절법을 사용하여 조사하였고, EPMA를 이용하여 박막의 조성을 확인하였다. 유전특성의 측정을 위해 백금 상부전극을 증착한 후, impedance analyzer를 이용하여 100kHz 영역에서의 유전손실을 측정하고, 측정된 정전용량과 박막의 두께로부터 유전율을 계산하였다. ZrTiO4 박막은 증착온도 20$0^{\circ}C$ 이상에서 결정성을 보이기 시작했으며, 열처리 이후에는 상온에서 비정질이었던 시편이 $650^{\circ}C$ 이상의 온도에서 결정화되기 시작하였다. 증착온도에 따라 유전손실은 0.038에서 0.017 정도로 감소하는 경향을 나타냈으며, 각각 열처리에 의해서 0.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.

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Electrical and Fluidic Characterization of Microelectrofluidic Bench Fabricated Using UV-curable Polymer (UV경화성 폴리머를 이용한 미소유체 통합접속 벤치 개발 및 전기/유체적 특성평가)

  • Youn, Se-Chan;Jin, Young-Hyun;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.36 no.5
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    • pp.475-479
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    • 2012
  • We present a novel polymer fabrication process involving direct UV patterning of a hyperbranched polymer, AEO3000. Compared to PDMS, which is the most widely used polymer in bioMEMS devices, the present polymer has advantages with regard to electrode integration and fast fabrication. We designed a four-chip microelectrofluidic bench having three electrical pads and two fluidic I/O ports. We integrated a microfluidic mixer and a cell separator on the bench to characterize the interconnection performance and sample manipulation. Electrical and fluidic characterization of the microfluidic bench was performed. The measured electrical contact resistance was $0.75{\pm}0.44{\Omega}$, which is small enough for electrical applications, and the pressure drop was 8.3 kPa, which was 39.3% of the value in the tubing method. By performing yeast mixing and a separation test in the integrated module on the bench, we successfully showed that the interconnected chips could be used for bio-sample manipulation.

헵타메틴 시아닌색소의 전기화학적 특성 분석

  • Kim, Yeong-Seong;Sin, Jong-Il;Park, Su-Yeol;Jeon, Geun;Son, Yeong-A
    • Proceedings of the Korean Society of Dyers and Finishers Conference
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    • 2009.11a
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    • pp.21-22
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    • 2009
  • 최근, 헵타메틴 시아닌색소(heptamethinecyanine)는 그 적용 범위가 넓기 때문에 많은 연구자들의 관심을 받고 있다. 특히, photo-sensitizers, dye lasers, optical recordings와 storage media 등 다양한 분야에 적용이 가능하다. 헵타메틴 시아닌색소의 주된 특징은 polymethine 사슬에 연결된 cyclohexene 고리에 의하여 근적외선 부근에서 흡수가 이뤄진다는 것이다. 근적외선 색소의 흡수 특성을 HOMO와 LUMO 에너지 전위를 사용하여, 수치화 함으로써 분자간, 분자내 상호작용을 분석 할 수 있다. 따라서, 본 실험은 헵타메틴 시아닌 색소의 치환체에 따른 전기화학적 특성을 순환 전압-전류법(Cyclic voltammetry)과 분자 모델링을 통하여 HOMO와 LUMO의 에너지 준위를 구하고, 치환체 효과가 헵타메틴 시아닌색소에 미치는 전기화학적 특성을 UV-Vis와 계산으로부터 얻어진 에너지준위를 분석하고자 한다. 본 실험에 사용된 Uv-Vis 스펙트럼 측정은 Agilent 8453 UV-Vis spectrophotometer를 사용하였고, 전기화학적 분석 방법인 순환 전압-전류법은 Versa STAT 3 (Princeton allied research in USA)를 사용하였다. 순환전압-전류법의 측정은 Acetonitrile 용액에 $TBAPF_6$ (Tetrabutylammonium hexafluorophosphate)를 전해질로 하고, Ag/$Ag^+$을 기준전극으로 사용하여 주사 속도를 50mV/s로 하여 측정 하였다. 치환체에 의한 영향을 알아보기 위하여 분자구조 최적화 모델링을 사용하였다. 3차원 분자입체 특성 및 에너지 준위 상태는 Materials studio 4.2를 사용하여 특성을 예측 하였다. 본 연구에서는, 헵타메틴 시아닌 색소의 기본 골격에 각기 다른 치환체를 치환 시켜 치환체에 의한 영향을 전기화학적인 방법인 순환 전압-전류법(Cyclic voltammetry)와 분자 모델링 방법을 사용하여, HOMO와 LUMO에너지 준위 값을 구함으로써 치환체에 의한 영향을 알아보았다. 치환체로는 Dye 1과 Dye 2로 치환된 헵타메틴 시아닌 색소를 사용하였다. 이렇게 얻어진 HOMO/LUMO 에너지 준위 값으로부터 이온화 에너지($I_p$)와 전자 친화도($E_a$) 또한 구할 수 있는데, $I_p$$E_a$는 분자 오비탈과 전자전이에 관련된 값들이고, 이는 계산을 통하여 얻을 수 있다. 순환 전압-전류법의 계산 방법은 봉우리 전위(peak postential)와 (onset potential)방법이 있는데, 이 계산을 통한 전위 값들이 봉우리 전위 계산 방법이 onset potential 방법에 비하여 작은 전위 값으로 나타난다. 하지만 이 두 가지 방법 모두 현재 순환 전압-전류법을 사용하여 HOMO/LUMO 에너지 준위를 측정하는 방법에 쓰이고 있으며, 어떠한 계산 방법이 더 정확하다고는 말 할 수 없지만, 본 실험 결과를 통하여 비교 분석한 결과 onset potential 계산 방법이 봉우리 전위 계산 방법에 비하여 정확하다고 판단된다. Dye 1과 Dye 2를 순환 전압-전류법으로 측정한 결과 각기 다른 전위를 나타내고 이것을 계산을 통하여 정량화하면 Dye 2가 Dye 1에 비하여 높은 전위 값을 갖음을 알 수 있는데, 이것은 ethyl 에 비하여 surful 원자의 전자공여성이 더 크다고 할 수 있다.

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Effect of Cd Concentration on Characteristics of CdS Thin Films Prepared by Chemical Bath Deposition (화학용액증착법에 의하여 증착된 CdS 박막의 특성에 대한 Cd 농도의 영향)

  • Jung, SungHee;Chung, CheeWon
    • Applied Chemistry for Engineering
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    • v.23 no.4
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    • pp.377-382
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    • 2012
  • CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

Characteristics of Pr1-xMxMnO3(M=Ca, Sr) as a Cathode Material of Solid Oxide Fuel Cell (고체전해질형 연료전지용 Pr1-xMxMnO3(M-Ca, Sr) 산소극 재료의 특성)

  • Rim, Hyung-Ryul;Jeong, Soon-Ki;Lee, Ju-Seong
    • Applied Chemistry for Engineering
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    • v.7 no.6
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    • pp.1125-1131
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    • 1996
  • Ca or Sr-doped $PrMnO_3$ were prepared for cathode material of solid oxide fuel cell. The characteristics such as the electrical conductivity and the cathodic overpotential were investigated as to doping contents. Also the reactivity with yttria stabilized zirconia of electrolyte, and the thermal expansion coefficient were studied. The prepared perovskite powder had the mean particle size of $2{\sim}5{\mu}m$, and the particle size and the surface area was out of relation to the doping content. When Ca doping amount of electrode material was 30mol%, the electrical conductivity was the highest value of $266S{\cdot}cm^{-1}$ at $1000^{\circ}C$, and also the polarization characteristics showed the best property. The reactivity between YSZ and Ca-doped $PrMnO_3$ at $1200^{\circ}C$ for 100hours was lower than that between YSZ and Sr-doped $PrMnO_3$. The thermal expansion coefficient of $Pr_{0.7}Ca_{0.3}MnO_3$ was $1.19{\times}10^{-5}K^{-1}$ in the temperature range of $300{\sim}1000^{\circ}C$, and this value was similar to that of YSZ, $1.15{\times}10^{-5}K^{-1}$.

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Properties of Pb(Zr, Ti)$\textrm{O}_3$ Ferroelectric Thin Films on MgO/Si Substrate by RF Sputtering (RF 스퍼터링에 의해 MgO/Si 기판위에 증착된 Pb(Zr, Ti)$\textrm{O}_3$ 강유전체 박막의 특성연구)

  • Jang, Ho-Jeong;Seo, Gwang-Jong;Jang, Ji-Geun
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1170-1175
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    • 1998
  • PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

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Electric and Electromagnetic Surveys of the Hongseong Fault Zone (홍성 단층대에서의 전기, 전자 탐사 연구)

  • Kwon, Byung-Doo;Lee, Heui-Soon;Park, Gye-Soon;Oh, Seok-Hoon;Lee, Choon-Ki
    • Journal of the Korean earth science society
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    • v.24 no.4
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    • pp.361-368
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    • 2003
  • We have investigated the electric resistivity structure of the fault zone located in the Hongseong area where a big earthquake with M 5.0 occurred in 1978. Usually, Electric and Electromagnetic methods are broadly operated in the field of engineering works since these methods are effective to understand the distribution of geological weak zones - fault or fracture zones. We have conducted the dipole-dipole array resistivity method and MT(magnetotelluric) method and interpreted the resistivity distribution of the fault zone with the aid of various inversion methods. An MT survey was performed at 18 points along a 2.9 km survey line perpendicular to the fault line and a magnetic dipole source was used to enhance the S/N ratio in the high frequency. A Electric dipole-dipole array resistivity survey with the dipole length of 50 meters was carried out perpendicular to the fault. In view of two survey results, the fault marks the boundary between two opposite resistivity structures, especially the low resistivity zone is exhibited deeply through the prospective fault line. The result that the low resistivity zone is located at the center of the fault zone corresponds with the fact that the fault zone of the Hongseong area is active. We expect these results to provide basic information about the physical properties of fault zones in Korea.

Electrochemical Characteristics of Microporous Polymer Electrolytes Based on Poly(vinylidene-co-hexafluoropropylene) (PVdF계 미세기공 고분자 전해질의 전기화학적 특성)

  • Jung Kang-Kook;Kim Jong-Uk;Ahn Jou-Hyeon;Kim Ki-Won;Ahn Hyo-Jun
    • Journal of the Korean Electrochemical Society
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    • v.7 no.4
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    • pp.183-188
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    • 2004
  • In order to develop polymer electrolyte for lithium/sulfur batteries, highly microporous P(VdF-HFP) membranes were prepared by phase inversion method. Porous structure was controlled by extracting NMP with mixture of deionized water and methanol. Porous structure of the membranes was observed with SEM. Polymer electrolytes were prepared by soaking the porous membranes in 1M $LiCF_3SO_3-TEGDME/EC$. The ionic conductivity of polymer electrolyte was found to be at high as $2\times10^{-3}S/cm$ when the polymer membrane extracted by $80\%$ methanol was used. The microporous polymer electrolyte optimized in this work displayed high ionic conductivity, uniform pore size, low interfacial resistance and stable ionic conductivity with storage time. The ionic conductivity of polymer electrolytes was measured with various lithium salts, and the conductivity showed $3.3\times10^{-3}S/cm$ at room temperature when $LiPF_6$ was used as a lithium salt.

A Study on Sulfonated Fluorenyl Poly(ether sulfone)s as Catalyst Binders for Polymer Electrolyte Fuel Cells (고분자 전해질 연료전지 촉매층 바인더를 위한 Sulfonated Fluorenyl Poly(ether sulfone)에 관한 연구)

  • Cho, Won Jae;Lee, Mi Soon;Lee, Youn Sik;Yoon, Young Gi;Choi, Young Woo
    • Journal of the Korean Electrochemical Society
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    • v.19 no.2
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    • pp.39-44
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    • 2016
  • Oxygen reduction reaction in the fuel cell (ORR) plays a dominant role in the overall reaction. In addition, the low compatibility between the membrane and the binder consisted of different materials, greatly reduces the efficiency of the fuel cell performance. In view of these two problems, geometrically modified copolymers with 9.9_Bis (4-hydroxyphenyl) were synthesized via condensation reaction instead of conventional biphenol and were adopted as hydrocarbon ionomer binders. By utilizing these binders, two kinds of MEAs using fluorinated Nafion membrane and hydrocarbon based membrane were manufactured in order to electrochemical performance evaluation. With current-voltage curves, there was no significant difference in the 0.6 V when two types of membrane were applied. Also, tafel slope became considerably lower as compared to the Nafion membrane. Thus, it is determined that the new hydrocarbon binder is expected to contribute the improvement in performance of fuel cells.

Numerical Analysis of Bragg Reflector Type Film Bulk Acoustic Wave Resonator (수치적 계산을 이용한 Bragg Reflector형 탄성파 공진기의 특성 분석)

  • 김주형;이시형;안진호;주병권;이전국
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.980-986
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    • 2001
  • Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.

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