• Korean Journal of Medicinal Crop Science
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• v.10 no.5
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• pp.353-365
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• 2002

This study was conducted to investigate the effect of cultural methods(cutting, flower removal) on growth and quality of B. falcatum L. Jeongseon local cultivar collected in Korea and Mishima local cultivar introduced from Japan were used. Some of the results obtained are as follows; Jeongseon local cultivar showed less stem branches and shoot weight compared to Mishima. However, Jeongseon local cultivar showed tall plant height, high root fresh and dry weight, and high levels of saikosaponin-a and total-saikosaponin, but low saikosaponin-c content than that of Mishima. Both cultivars seeded on March 20 had longer main root, bigger stem diameter, few stem branch, and high saikosaponin-c content compared with those of late seeded one, April 30. Growth characteristics such as plant height, stem diameter, stem branch number, shoot weight, root diameter, root fresh and dry weight, and root branch number were increased in a low planting $density(30{\times}15\;cm)$, but the content of saikosaponin was not affected by planting density. Jeongseon and Mishima cultivars seeded on April 10 with $30{\times}15\;cm$ planting density and April 30 with $30{\times}10\;cm$ planting density contained highest total saikosaponin levels, respectively. However, average root dry weight was not affected by planting time or density in both Bupleurum cultivars. Both cutting and flower removal increased the length of main root, fresh and root weight, and saikosaponin-a, saikosaponin-d and total-saikosaponin in Jeongseon cultivar than that of Mishima. As the harvesting time was delayed, plant height, stem diameter, shoot weight, length of main root, root fresh and dry weight were increased, but content of saikosaponin-a, saikosaponin-d and total-saikosaponin were decreased.

• Horticultural Science & Technology
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• v.33 no.4
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• pp.486-491
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• 2015

In this study, we evaluated the differences in fruit development and quality indices of fruits subjected to blossom thinning before full bloom in 'Hanareum' and 'Niitaka' pears (Pyrus pyrifolia Nakai). We carried out a thinning treatments at 5 days before full bloom, targeting the blossoms at the 1st and 2nd position (T1) or the blossoms at the 6th and 7th position (T2) from the basal part of the flower cluster in both cultivars. Blossom thinning treatments increased the average fruit weight of early-season Asian pear 'Hanareum' up to 10.5% (T1) and 11.0% (T2) at harvest time (110 days after full bloom). The mid-season 'Niitaka' pear showed increased fruit weight of up to 12.6% (T1) and 16.8% (T2) at harvest time (170 days after full bloom). Moreover, these treatments increased the production rate of bigger sized fruits in both cultivars. Removal of blooms also affected fruit quality indices; the bloom-thinned fruits showed higher soluble solids contents (about $1^{\circ}Brix$) and higher skin color redness ($a^*$) especially in 'Niitaka' pears when compared to the non-thinned controls. Overall, the treatments increased the fruit size and weight as well as fruit quality including soluble solids and skin color. Bloom thinning treatment targeting the 6th to 7th blossom from the basal part of the flower cluster may be recommended as the practical thinning method in Asian pear 'Hanareum' and 'Niitaka'.

• Proceedings of the KOR-KST Conference
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• 1993.07a
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• pp.255-258
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• 1993

본문제출료 일충여교통복무상태상련계적성시도로교통복무수평적화분방법, 귀납출료성시교통적오충복무상태,즉자유류, 교차구무일류, 일류은정, 일류연오저우가 접수겁한급교통엄중조새,환학인결정교통복무상태절환적인소시교차구진구도적포화도. 재차기출상, 근거유관수거급출료구분교통복무상태적포화도간치, 종이건립료화 분성시혹구역도로망교통복무수평적표준.

• Photonics industry news
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• s.15
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• pp.6-9
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• 2003

• the USERS
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• s.43
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• pp.52-55
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• 2004

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.1-9
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• 2010

Three-dimensional (3-D) integration is an emerging technology, which vertically stacks and interconnects multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip to form highly integrated micro-nano systems. Since CMOS device scaling has stalled, 3D integration technology allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. The potential benefits of 3D integration can vary depending on approach; increased multifunctionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, increased yield and reliability, flexible heterogeneous integration, and reduced overall costs. It is expected that the semiconductor industry's paradiam will be shift to a new industry-fusing technology era that will offer tremendous global opportunities for expanded use of 3D based technologies in highly integrated systems. Anticipated applications start with memory, handheld devices, and high-performance computers and extend to high-density multifunctional heterogeneous integration of IT-NT-BT systems. This paper attempts to introduce new 3D integration technologies of the chip self-assembling stacking and 3D heterogeneous opto-electronics integration for realizng the super-chip.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.371-371
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• 2011

태양전지에 대한 관심과 수요가 증가함에 따라 태양전지의 대면적화 및 저가 생산을 위한 유기태양전지에 대한 연구가 활발히 진행되고 있다. 유기태양전지의 대면적화는 현재의 태양전지 시장을 대체하기 위한 중요한 요소 중 하나이다. 기존의 유기태양전지는 주로 스핀코팅법에 의해 제작 되었으나 대면적화 및 유연성 박막 제조 시 공정상 어려움이 있기 때문에 스핀코팅을 대체할 새로운 제조 방법이 개발되고 있다. 그 중, 스프레이 공법을 적용한 유기태양전지 제조방법이 각광을 받고 있으며, 이에 대한 연구가 활발히 진행되고 있다. 본 연구는 유기태양전지 제작을 위하여 금속 전극을 제외한 전 공정 (N형 ZnO 층 -P3HT:PCBM 광흡수층-P형 PEDOT:PSS층)을 용액기반의 스프레이 코팅 공정을 적용하여 제작하였다. 스프레이 공정을 통해 코팅한 ZnO, 광활성 및 PEDOT:PSS 박막의 경우, 각각의 표면거칠기는 스핀코팅에 의해 형성된 박막과 유사한 거칠기 값을 가졌다. 최적의 스프레이 공정을 통하여 ITO/ZnO/P3HT:PCBM/PEDOT:PSS/Ag의 구조를 가지는 invert형 유기태양전지를 제작한 결과, AM 1.5G의 광원조건에서 2.95 %의 광변환 효율을 얻을 수 있었다. 이는 기존의 스핀코팅법으로 제작된 소자와 거의 비슷한 성능으로써 저가형□대면적 유기태양전지의 제작 가능성을 보여준 결과이다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.1-6
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• 2010

We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having $1.5F^2$/bit cell size.

• The Magazine of the IEIE
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• v.37 no.2
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• pp.65-74
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• 2010

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.155-155
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• 2000