• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.8
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• pp.1277-1286
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• 2001

Aluminum 5052/Aramid Fiber Reinforced Plastic(Al5052/AFRP) laminates are applied to the fuselage-wing intersection. The Al5052/AFRP laminates suffer from the cyclic bending moment of variable amplitude during the service. Therefore, the influence of cyclic bending moment on the delamination and the fatigue crack propagation behavior in Al5052/AFRP laminate was investigated in this study. Al5052/AFRP laminate composite consists of three thin sheets of Al5052 and two layers of unidirectional aramid fibers. The cyclic bending moment fatigue tests were performed with five different levels of bending moment. The shape and size of the delamination zone formed along the fatigue crack between Al5052 sheet and aramid fiber-adhesive layer were measured by an ultrasonic C-scan. The relationships between da/dN and ΔK, between the cyclic bending moment and the delamination zone size, and between the fiber bridging mechanism and the delamination zone were studied. Fiber failures were not observed in the delamination zone in this study. It represents that the fiber bridging modification factor should turn out to increase and that the fatigue crack growth rate should decrease. The shape of delamination zone turns out to be semi-elliptic with the contour decreased non-linearly toward the crack tip.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.317-318
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• 2013

Terahertz (THz) wave는 광학 영역과 방송파 영역 사이에 광대역 주파수 스펙트럼을 차지하고 있다. X선과는 달리 비이온화 광원으로 직진성, 투과성, 낮은 에너지 (meV)를 가지고 있어 비파괴적이고 무해한 장점을 지니고 있다. 본 연구에서는 In0.53Ga0.47As:Be/In0.52Al0.48As의 multi quantum well (MQW)을 Semi-insulting InP:Fe substrate 위에 active layer의 두께와 적층을 변화주어서 성장하였고Au (200 nm)/Ti (30 nm)의 금속전극으로 공정을 하였다. Ti:Sapphire femtosecond pulse laser를 조사하여 THz time-domain spectrometer 시스템을 이용하여 광전도검출법으로 THz 검출 특성을 연구하였다. THz 검출은 짧은 전하수명과 높은 저항을 요구한다. LTInGaAs의 경우 AsGa antisite로 인하여 짧은 전하수명을 얻게 되면 n-type의 높은 전하밀도를 가지게 되어서 저항이 낮아지게 된다. 높은 저항을 만들기 위하여 Be doping을 이용하여 과잉의 전자들을 보상하고 InAlAs layer를 삽입시켜 보다 높은 저항을 얻었다. LT-InGaAs:Be는 LT-GaAs보다 1/70 정도의 amplitude를 보이는데 LT-InGaAs/InAlAs MQW의 경우 LT-GaAs 대비 약 3/4 정도의 큰 amplitude를 얻었다. 또 active layer의 두께가 얇고 적층이 많을수록 신호가 커지는 것을 알 수 있었다. 이는 상대적으로 band gap이 큰 InAlAs층이 더 높은 저항을 만든 것으로 사료된다.

• Journal of the Korean Society for Nondestructive Testing
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• v.7 no.2
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• pp.42-47
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• 1988

The off-axis tensile strength of the unidirectional carbon fiber reinforced plastic and the residual strength of impact damaged CFRP were measured and compared with the stress wave factor (SWF) of the specimens. The SWF values were measured to be decreased with the strength reduction in both cases and found to be useful for the nondestructive strength evaluation of unidirectional CFRP. The failure behaviour of the unidirectional CFRP during off-axis tensile testing was also monitored by acoustic emission(AE) method. The AE energy release showed the characteristic feature depending on the off-axis angle and this result was analyzed to be caused by the difference of the expected failure mode depending on the off-axis angle. The failure mode of CFRP was found to be analyzed by investigation of the peak amplitude distribution of AE.

• Composites Research
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• v.16 no.3
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• pp.9-17
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• 2003

In order to simulate the crack connection between cords and the interply crack growth in the belt-layer of real tire, 2 ply rubber/cord laminate specimens with exposed edges were tested in 4~11mm displacement control. Measurement of the crack connection is evaluated when crack reaches the half of the length between 45$^{\circ}$ aligned cords, and the amount of the crack growth is measured by the steel probe method. 2 dimensional analytic modeling was performed to simulate the crack connection between cords at the exposed edges. Also, the theoretical life of the specimens was calculated from the crack connection life between cords(critical value) and from the critical value to the final failure by the use of Tearing energy(T); the strain energy release per unit area of one fracture surface of a crack. Then, theoretical life was compared with those of experiments. The life prediction up to the critical value has about 20% error compared to experimental life, and up to the final failure about 65% error. Therefore, total theoretical life has about 45% error compared to the experimental life, which is conceivable in the case of rubber.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.288-288
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• 2011

최근 Charge Trap Flash (CTF) Non-Volatile Memory (NVM) 소자가 30 nm node 이하로 보고 되면서, 고집적화 플래시 메모리 소자로 각광 받고 있다. 기존의 CTF NVM 소자의 tunnel layer로 쓰이는 SiO2는 성장의 용이성과 Si 기판과의 계면특성, 낮은 누설전류와 같은 장점을 지니고 있다. 하지만 단일층의 SiO2를 tunnel layer로 사용하는 기존의 Non-Valatile Memory (NVM)는 두께가 5 nm 이하에서 direct tunneling과 Stress Induced Leakage Current (SILC) 등의 효과로 인해 게이트 누설 전류가 증가하여 메모리 보존특성의 감소와 같은 신뢰성 저하에 문제점을 지니고 있다. 이를 극복하기 위한 방안으로, 최근 CTF NVM 소자의 Tunnel Barrier Engineered (TBE) 기술이 많이 접목되고 있는 상황이다. TBE 기술은 SiO2 단일층 대신에 서로 다른 유전율을 가지는 절연막을 적층시킴으로서 전계에 대한 민감도를 높여 메모리 소자의 쓰기/지우기 동작 특성과 보존특성을 동시에 개선하는 방법이다. 또한 터널링 절연막으로 유전률이 큰 High-K 물질을 이용하면 물리적인 두께를 증가시킴으로서 누설 전류를 줄이고, 단위 면적당 gate capacitance값을 늘릴 수 있어 메모리 소자의 동작 특성을 개선할 수 있다. 본 연구에서는 CTF NVM 소자의 trap layer로 쓰이는 HfO2의 두께를 5 nm, blocking layer의 역할을 하는 Al2O3의 두께를 12 nm로 하고, tunnel layer로 Si3N4막 위에 유전율과 Energy BandGap이 유사한 HfAlO와 ZrO2를 적층하여 Program/Erase Speed, Retention, Endurance를 측정을 통해 메모리 소자로서의 특성을 비교 분석하였다.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.155-161
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• 2019

Understanding charge transport anisotropy at the interface of conjugated nanostructures basically gives insight into structure-property relationship in organic field-effect transistors (OFET). Here, the anisotropy of the field-effect mobility at the interface between 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) single crystal with cofacial molecular stacks in a-b basal plane and SiO gate dielectric was investigated. A solvent exchange method has been used in order for TIPS-pentacene single crystals to be grown on the surface of SiO₂ thin film, corresponding to the charge accumulation at the interface in OFET structure. In TIPS-pentacene OFET, the anisotropy ratio between the highest and lowest measured mobility is revealed to be 5.2. By analyzing the interaction of a conjugated unit in TIPS-pentacene with the nearest neighbor units, the mobility anisotropy can be rationalized by differences in HOMO-level coupling and hopping routes of charge carriers. The theoretical estimation of anisotropy based on HOMO-level coupling is also consistent with the experimental result.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.174-182
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• 2020

The printed electronics field using ink-jet printing technology is in the spotlight as a next-generation technology, especially ink-jet 3D printing, which can simultaneously discharge and precisely control various ink materials, has been actively researched in recent years. In this study, complex structure of an insulating layer and a conductive layer was fabricated with photo-curable silica ink and PVP-added Cu nano ink using ink-jet 3D printing technology. A precise photocured silica insulating layer was designed by optimizing the printing conditions and the rheological properties of the ink, and the resistance of the insulating layer was 2.43 × 10¹³ Ω·cm. On the photo-cured silica insulating layer, a Cu conductive layer was printed by controlling droplet distance. The sintering of the PVP-added nano Cu ink was performed using an IPL flash sintering process, and electrical and mechanical properties were confirmed according to the annealing temperature and applied voltage. Finally, it was confirmed that the resistance of the PVP-added Cu conductive layer was very low as 29 μΩ·cm under 100℃ annealing temperature and 700 V of IPL applied voltage, and the adhesion to the photo-cured silica insulating layer was very good.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.278-282
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• 2010

The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.262-267
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• 2009

Superhydrophobic $TiO_2$ thin films were successfully fabricated on a glass substrate by wet process. Layer-by-layer (LBL) deposition and liquid phase deposition (LPD) methods were used to fabricate the thin films of micro-nano complex structure with a high roughness. To fabricate superhydrophobic $TiO_2$ thin films, the (PAH/PAA) thin films were assembled on a glass substrate by LBL method and then $TiO_2$ nanoparticles were deposited on the surface of (PAH/PAA) thin film by LPD method, Subsequently, hydrophobic treatment using fluoroalkyltrimethoxysilane (FAS) was carried out on the surface of prepared $TiO_2$ thin films. The $TiO_2$ thin film fabricated with 45 minutes immersion time on $(PAH/PAA)_{10}$ showed the RMS roughness of 65.6nm, water contact angel of $155^{\circ}$ and high transmittance of above 80% (>650nm in wavelength) after the hydrophobic treatment. The Surface morphologies, optical properties and contact angel of prepared thin films with different experimental conditions were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.