• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.5
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• pp.409-417
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• 2003

Cure monitoring can be used to improve the quality and productivity of thermosetting resin matrix composite products during their manufacturing process. In this work, the sensitivity of dielectrometry was improved by adequate separation the efforts of sensor and externals on the measured signal. A new algorithm to obtain the degree of cure during dielectric cure monitoring of glass/polyester and glass/epoxy composites was developed by employing a function of both temperature and dissipation factor, in which five cure monitoring parameters were used to calculate the degree of cure. The decreasing pattern of dissipation factor was compared with the relationships between the degree of cure and the resin viscosity. The developed algorithm might be employed for the in situ cure monitoring of thermosetting resin composites.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.57-65
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• 2017

The electronic components in mobile device are composed of electronic chips and various other materials. These components become extremely thin and the constituent materials have different coefficient of thermal expansion, so that considerable warpages occurs easily due to temperature change or external load. Shadow $moir{\acute{e}}$ is non-contact, whole field technique for measuring out-of-plane displacement, but the measurement sensitivity is not less than $50{\mu}m/fringe$, which is not suitable for measuring the warpage of the electronic components. In this paper, we implemented a measurement method with enhanced sensitivity of $25{\mu}m/fringe$ by investigating and optimizing various experimental conditions of the shadow $moir{\acute{e}}$. In addition, four $moir{\acute{e}}$ fringe patterns recorded by the phase shift are processes to obtain a $moir{\acute{e}}$ fringe patterns with a sensitivity four times higher. The measurement technique is applied to small electronic components of a smart phone for measuring warpage with a high sensitivity of $5{\mu}m/fringe$ at room temperature and at the temperature of $100^{\circ}C$.

• The Journal of the Acoustical Society of Korea
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• v.13 no.1E
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• pp.45-54
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• 1994

Characteristics of a piezoelectric material are evaluated to pick up the optimal crystal cut and propagation direction for a SAW device. For the piezoelectric single crystal $LiTaO_4$, such items are investigated as the Rayleigh wave velocity, the electromechanical coupling factor, the surface permittivity, the frequency-temperature coefficient, the air loading attenuation, the pure mode propagation, the beam steering and the misalignment sensitivity. Theoretical calculations reveal that Y-cut and Z-propagation is the optimal SAW propagation path. The results are confirmed through experiments. The method empolyed in this paper is applicable to other crystals, too, either single or poly crystals.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.57-65
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• 2015

Electronic packages consist of various materials, and as temperature changes, warpage occurs because of the difference in coefficient of thermal expansion. Shadow $moir{\acute{e}}$ is non-contact, whole field measurement technique for out-of-plane displacement. However, the technique has low sensitivity above $50{\mu}m/fringe$, it is not adequate for the warpage measurement in some circumstance. In this paper, by applying phase shifting process to the traditional shadow $moir{\acute{e}}$, measurement system having enhanced sensitivity of $12.5{\mu}m/fringe$ is constructed. Considering Talbot effect, the measurement is carried out in the half Talbot area. Shadow fringe pattern having four times enhanced sensitivity is obtained by the image process with four shadow fringes. The measurement technique is applied to the fibered package substrate and coreless package substrate for measuring warpages at room temperature and at about $100^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.62-62
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• 2000

비접촉식 온도센서는 물체에서 방출하는 적외선 등의 복사신호를 열에너지로 전환하고 이를 다시 전기신호로 2차 에너지 변환하여 온도를 감지하는 센서로 인체 검지를 응용한 다양한 상품 및 교통, 방재, 빌딩 시스템 등의 분야에 널리 응용되고 있다. 비접촉식 적외선 센서는 열에너지를 전기에너지로 변환하는 방법에 따라 양자형과 열형으로 구분되며, 이중 양자형은 광전도나 광기전력 효과 등을 이용하여 감도 및 응답성이 우수하다는 장점을 지니고 있지만, 소자부를 80K 이하 온도로 유지시키는 냉각을 필요로 하므로 대형 제작이 불가피하고 그 용도가 제한적이다. 열형은 냉각이 필요 없고 소형으로 제작가능한 장점을 지니고 있어 써모 파일이나 초전체를 이용한 번용 센서가 보급되고 있다. 그러나 써모파일의 경우 출력되는 전기 신호가 미약하여 감도 및 응답성을 향상하기 위해 구조가 복잡하고, 특히 모터초퍼나 저항을 전압으로 변환시키는 전력기 등이 필요로 하는 단점을 지니고 있다. 따라서 이러한 문제점을 보완하기 위해 열전재료 박막을 이용한 적외선 센서를 개발하려는 노력이 진행중에 있다. 열전박막을 이용한 적외선 센서는 열전재료의 Seebeck 현상을 이용하여 열에너지에서 전기에너지의 변환이 자가발전으로 이루어져 offset과 외부 바이어스를 필요로 하지 않는다. 또한 작은 온도 변화에도 그 감도와 응답성이 높고, 출력신호가 커서 증폭기 등이 불필요한 장점을 지니고 있다. 특히 초전형 센서가 상온에서도 기판에 대한 열 확산을 제어해야 하는 문제점을 갖는 반면, 열전박막형 적외선 센서는 고온에서도 안정된 출력 신호를 얻을 수 있어 그 활용 온도 범위가 크게 확대될 것으로 기대된다. 본 실험에서는 우수한 열전특성을 갖는 (Bi1-xSbx)2Te3 박막을 얻기 위해 열팽창계수가 작고 알칼리 원소가 0.3% 이하로 포함되어 있는 corning glass(# 7059)를 기판으로 사용하였다. 또한 최적의 열전특성을 나타내는 조성을 실험적으로 구하기 위해 (Bi0.2Sbx)2Te3 조성의 합금 타？ 위에 Bi2Te3 및 Sb2Te3 chip을 올려놓고 그 면적을 변화시켜 다양한 조성의 열전박막을 증착하였다. 열전박막의 증착시 산화와 오염에 의한 열전특성 변화를 최소화하기 위해 초기진공도를 1$\times$10-6 Torr로 하였으며, Ar 가스를 흘려주어 2$\times$102 Torr 의 증착진공도를 유지하였다. 열전박막을 증착하기 전에 기판을 10분간 200W의 출력으로 RF 처리하였으며, 30$0^{\circ}C$에서 33 /sec의 속도로 (Bi1-xSbx)2Te3 박막을 증착하였다. 이와 같이 제조된 (Bi1-xSbx)2Te3 박막의 미세구조를 SEM으로 관찰하고 EDS로 조성을 분석하였으며, XRD를 이용하여 결정성을 관찰하였다. 또한 (Bi1-xSbx)2Te3 박막의 Seebeeck 계수 및 전기비저항을 측정하고 증착된 박막조성, 결정상, 미세구조와 열전특성간의 상관관계를 고찰하였다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.6 s.312
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• pp.27-32
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• 2006

A temperature-compensated hygrometer has been developed using resistive humidity sensors. It consist of a sine wave generator, logarithm converters, rectifiers, and amplifiers. The hygrometer accomplishes the linearization and temperature compensation of sensor characteristics. The theory of operation is presented and experimental results are used to verify theoretical predictions. The experimental results show that the conversion sensitivity of the hygrometer is about 24.8 mV/%RH and the linearity error of the conversion characteristic is less than 17.2 % over a relative humidity range from 30 to 80 %RH. The results also show that the temperature coefficient of the output voltage is less than $10149ppm/^{\circ}C$ over a temperature range from 22 to $40^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.141-148
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• 2019

Electronic substrates used in a mobile device is composed of various materials, and when the temperature is changed during manufacturing or operating, thermal deformation and stress concentration occur due to the difference in thermal expansion coefficient of each material. The shadow moiré technique is a non-contact optical method that measures shape or out-of-plane displacement over the entire area, but it is necessary to overcome the Talbot effect for high sensitivity applications. In this paper, LED light sources of various wavelengths was used to overcome the Talbot effect caused in the shadow moiré technique. By using the phase shift method, an experimental method to retain the measurement sensitivity within 10 ㎛/fringe was proposed and evaluated, and this method is applied to the thermal deformation measurement of the mobile electronic substrate. In the case of using white light, there were several areas that could not be measured due to the Talbot effect, but in the case of using blue LED light, it was shown that a precise moiré pattern with a sensitivity of 6.25 ㎛/fringe could be obtained in most areas.