• Title/Summary/Keyword: 저항변화

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Design of C-MOS Leak-Less Iron Controller Using Ceramic (세라믹을 이용한 C-MOS 정전기 방지용 인두조절기 설계)

  • 안양기;윤동한김태형
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.659-662
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    • 1998
  • 전자부품이나 설계된 회로시스템에 납땜을 하기 위해 인두를 사용하는데 누설전류, 서지전압, 정전기, 적절하지 못한 온도 등 여러 가지 악조건으로 인해 부품의 파괴를 가져온다. 특히 C-MOS로 설계된 소자의 경우는 다른 전자부품 보다 더 민감하기 때문에 파괴될 경우가 다발적으로 발생된다. 따라서 절연저항이 높고, 사용자가 적절한 온도로 제어할 수 있는 인두조절기 설계가 활발히 진행되고 있다. 본 논문에서는, 인두 히터에 센서를 삽입하여 이 저항의 변화율에 따라 온도를 감지하고, 주파수 방해를 최소화할 수 있는 Zero Voltage Switch IC를 사용하여 히터의 온도를 제어하였다. 또한, 사용자가 온도 변화를 알 수 있도록 A/D 변환기를 사용하여 시그먼트로 표시하였다. 기존에 설계된 시스템은 온도를 감지하는 센서가 민감하며 센서에서 감지된 신호가 비교기를 통해서 직접 히터의 온도를 제어하였기 때문에 온도 변화율이 매우 심하고, 이두팁이 분리되어있지 않기 때문에 절연저항이 매우 낮았다. 본 논문에서는, 이러한 문제점을 해결하기 위해 센서의 민감성을 최소화하고, Zero Voltage Switch IC를 사용하여 히터의 온도를 정밀하게 제어하였으며, 절연저항을 높이기 위해 인두팁의 중간에 세라믹을 삽입하여 팁에 온도만 전달될 수 있도록 용접을 하여 기존의 문제점을 개선하였다.

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A study on point defects in silicon crystal induced with neutron irradiation (중성자 조사에 의해 생성된 실리콘 결정내의 점결함 연구)

  • 이운섭;류근걸;김봉구
    • Proceedings of the KAIS Fall Conference
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    • 2001.05a
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    • pp.155-161
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    • 2001
  • 반도체 소자의 기판 재료로 사용되고 있는 실리콘 웨이퍼는 그 정밀도가 매우 중요하다. 본 연구에서는 균일한 Dopant 농도 분포를 얻을 수 있는 중성자 변환 Doping을 이용하여 실리콘에 인(P)을 Doping하는 연구를 수행하였다. 중성자 변환 Doping, 즉 NTD(Neutron Transmutation Doping)란 원자번호 30인 실리론 동위원소에 중성자가 조사되면 원자번호 31인 실리콘으로 변환되고, 2.6시간의 반감기를 갖고 decay 되면서 인(P)으로 변하게 되어 실리콘 웨이퍼에 n-type 전도를 갖게 하는 것을 말한다. 본 연구에서는 하나로 원자로를 이용하여 고저항(1000-2000Ω㎝) FZ 실리콘 웨이퍼에 중성자 조사하여 저항의 변화를 관찰하였고, 중성자 조사시 발생하는 점결함을 분석하여 점결함이 저항 변화에 미치는 영향을 알아보았다. 중성자 조사 전 이론적 계산에 의해 16.8Ω㎝와 4.76Ω㎝의 저항을 얻을 수 있을 것으로 예상되었고, 중성자 조사 후 SRP로 측정한 결과 실리콘 웨이퍼가 3Ω㎝과 2.5Ω㎝의 저항을 가지고 있을 확인할 수 있었으며, FT-IR 분석결과 점결함의 변화 양상을 확인할 수 있었다.

Changes in the Construction Industry: A Study on the Reduction of Individuals' Resistance (건설산업 변화에 따른 개인 저항성 저감에 관한 기초 연구)

  • Park, Min-Seo;Jun, Young-Joon;Park, Eun-Soo;Lee, Tai-Sik
    • Proceedings of the Korean Institute Of Construction Engineering and Management
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    • 2008.11a
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    • pp.311-314
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    • 2008
  • While relevant fields of construction industry have rapidly changed, the adaptation (skill) level of individuals to apply or utilize them has slowly followed. By understanding how individuals resist and conform under this change of construction industry and which factors are important for the adaptation, much time, effort, and cost can be saved for organization operation and management, and these saved resources will be able to be effectively invested to others. Accordingly, for construction industry it is necessary to understand and study how the users fit into the rapid technological change. Through this research, therefore, a systematic guideline should be created for the relevant fields of construction industry. For this research, the characteristics of individual personalities and behaviors based on the traditional model was observed and factors that contribute to the resistance and their mutual relations were theoretically identified and categorized, and then a conceptual and figurative model to show the mutual relation between the identified resistive factors was suggested.

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Scour Monitoring for Offshore Foundation using Electrical Resistivity and Shear Wave Tomography (전기비저항과 전단파 토모그래피를 이용한 해상 기초구조물의 세굴도 평가)

  • Park, Kiwon;Lee, Jongsub;Choi, Changho;Byun, Yonghoon
    • Journal of the Korean GEO-environmental Society
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    • v.15 no.9
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    • pp.37-45
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    • 2014
  • An embedded length of monopile caused by a scouring should be evaluated to monitor the stability of offshore foundations, because offshore foundations are affected by horizontal load. The objective of this study is to evaluate the scouring around offshore foundation by using electrical resistivity and to estimate ground stiffness by using shear wave tomography. The electrical resistivity profiles and shear wave tomography were measured according to the scour depth of model ground prepared with sand and cement. Several electrodes and bender elements were used to measure the electrical resistivity and shear waves, respectively. The electrode sets are attached on the monopile surface and bender elements are arranged in $7{\times}7$ arrays by using nylone frames. The electrical resistivity profiles and shear wave tomography are acquired by laboratory experiment. Maximum scour depth was estimated by electrical resistivity profiles and the ground stiffness of model ground was estimated by shear wave tomography. This study suggests that the electrical resistivity profiles and shear wave tomography may be useful for monitoring the stability of the offshore foundations.

Prediction of Wetting and Interfacial Property of CNT Reinforced Epoxy on CF Tow Using Electrical Resistance Method (전기저항 평가법을 이용한 CNT 함유 에폭시의 탄소섬유내 젖음성 및 계면특성 예측 연구)

  • Kwon, Dong-Jun;Choi, Jin-Yeong;Shin, Pyeong-Su;Lee, Hyung-Ik;Lee, Min-Gyeong;Park, Jong-Kyoo;Park, Joung-Man
    • Composites Research
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    • v.28 no.4
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    • pp.232-238
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    • 2015
  • As a new method to predict the degree of dispersion in carbon nanocomposites, the electrical resistance (ER) method has been evaluated. After CNT epoxy resin was dropped on CF tow, the change in electrical resistance of carbon fiber tow was measured to evaluate dispersion condition in CNT epoxy resin. Good dispersion of CNTs in carbon nanocomposite exhibited low change in ER due to wetted resin penetrated on CF tow. However, because CNT network was formed among CFs, non-uniform dispersion occurred due to nanoparticle filtering effect by CF tow. The change in ER for poor dispersion exhibited large ER signal change. The change in ER was used for the dispersion evaluation of CNT epoxy resin. Correlation between interlaminar shear strength (ILSS) and dispersion condition by ER method was established. Good CNT dispersion in nanocomposites led to good interfacial properties of fiberreinforced nanocomposites.

Laboratory chamber test for prediction of hazardous ground conditions ahead of a TBM tunnel face using electrical resistivity survey (전기비저항 탐사 기반 TBM 터널 굴진면 전방 위험 지반 예측을 위한 실내 토조실험 연구)

  • Lee, JunHo;Kang, Minkyu;Lee, Hyobum;Choi, Hangseok
    • Journal of Korean Tunnelling and Underground Space Association
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    • v.23 no.6
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    • pp.451-468
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    • 2021
  • Predicting hazardous ground conditions ahead of a TBM (Tunnel Boring Machine) tunnel face is essential for efficient and stable TBM advance. Although there have been several studies on the electrical resistivity survey method for TBM tunnelling, sufficient experimental data considering TBM advance were not established yet. Therefore, in this study, the laboratory-scale model experiments for simulating TBM excavation were carried out to analyze the applicability of an electrical resistivity survey for predicting hazardous ground conditions ahead of a TBM tunnel face. The trend of electrical resistivity during TBM advance was experimentally evaluated under various hazardous ground conditions (fault zone, seawater intruded zone, soil to rock transition zone, and rock to soil transition zone) ahead of a tunnel face. In the course of the experiments, a scale-down rock ground was provided using granite blocks to simulate the rock TBM tunnelling. Based on the experimental data, the electrical resistivity tends to decrease as the tunnel approaches the fault zone. While the seawater intruded zone follows a similar trend with the fault zone, the resistivity value of the seawater intrude zone decreased significantly compared to that of the fault zone. In case of the soil-to-rock transition zone, the electrical resistivity increases as the TBM approaches the rock with relatively high electrical resistivity. Conversely, in case of the rock-to-soil transition zone, the opposite trend was observed. That is, electrical resistivity decreases as the tunnel face approaches the rock with relatively low electrical resistivity. The experiment results represent that hazardous ground conditions (fault zone, seawater intruded zone, soil-to-rock transition zone, rock-to-soil transition zone) can be efficiently predicted by utilizing an electrical resistivity survey during TBM tunnelling.

Annealing Effects on Electron Transport properties of Nanostructured Thin Film (Annealing에 의한 나노구조 박막의 전기적 특성 연구)

  • Kouh, Tae-Joon
    • Journal of the Korean Magnetics Society
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    • v.16 no.1
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    • pp.98-101
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    • 2006
  • Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

Electrical characteristics of the SOI RESURF LDMOSFET as a function of surface doping concentration (표면 도핑 두께에 따른 SOI RESURF LDMOSFET의 전기적 특성분석)

  • Kim, Hyoung-Woo;Kim, Sang-Cheol;Seo, Kil-Soo;Bahng, Wook;Kim, Nam-Kyun;Kim, Eun-Dong
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1957-1959
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    • 2005
  • 표면이 도핑된 SOI RESURF LDMOSFET에 대해 표면 도핑의 깊이에 따른 항복전압 및 순방향 특성을 분석하였다. 표면 도핑영역의 깊이를 $0.5{\sim}2.0{\mu}m$까지 변화시켜가며 항복전압의 변화와 온-저항의 변화를 시뮬레이션 하였다. 표면 도핑영역의 깊이에 따라 항복전압은 $73V{\sim}138V$까지 변화하였으며, 온-저항도 $0.18{\sim}0.143{\Omega}/cm^2$까지 변화하였다. 항복전압은 표면 도핑 영역의 깊이가 $1.5{\mu}m$때 138V로 가장 높게 나타났으며, 동일한 에피 영역의 농도를 사용한 기존의 소자와 비교하였을 때 약 22.1%의 항복전압의 증가를 나타냈으며, 온-저항값은 약 21.8%정도 감소하였다.

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Effect of Manufacturing Parameters on Characteristic of Thin Film Resistor (박막저항기 특성에 미치는 제조 공정 인자의 영향)

  • Park Hyun-Sik;Yu Yun-Seop
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.1-7
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    • 2005
  • The effect of trimming process to adjust accurate resistance of a thin-film resistor was studied with respect to low temperature coefficient of resistance(TCR) and high precision. The characteristics of a thin-film resistor fabricated by sputtering were investigated depending on trimming condition and annealing temperature. Measured results showed that the characteristic of a thin-film resistor was degraded with increased trimming speed. However, an average resistance deviation and a TCR were improved to $0.26\%$ and 52.77[ppm/K], respectively, through annealing treatment. Also, thin-film resistors with 1 k$\Omega$ and 10k$\Omega$ showed better performance compared to a resistor with 100k$\Omega$. The Optimal trimming speed and annealing temperature were 20mm/sec and 539K, respectively, and under this optimal condition, a thin-film resistor with an average resistance deviation of $0.31\%$ and a TCR of below 10[ppm/K] was obtained.

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Using Ceramic Diaphragm for Thick Film Pressure Sensor (세라믹 다이어프램을 이용한 후막 압력센서)

  • Lee, Seong-Jae;Min, Nam-Ki;Park, Ha-Young
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1360-1362
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    • 2001
  • 본 논문에서는 다이어프램을 세라믹을 사용하여 2차 변환 소자로 금속 스트레인 게이지 대신에 thick film piezoresistor를 이용한 후막 압력센서에 관한 연구이다. 다이어프램의 미소 변형을 후막의 비저항 변화로 검출하는 압저항 효과를 이용하는 방식이다. 종래의 압력센서와 비교하여 크리프 현상이 적고, 안정성이 우수한 특징을 갖고 있다. 또한 저항선이나 박 게이지의 게이지율이 3$\sim$5 인 것이 비하면 후막저항을 사용한 경우, 약 15$\sim$20정도의 높은 게이지율을 얻을 수 있어서 측정범위를 넓게 할 수 있으며, 후막공정의 스크린 프린팅을 통한 자동화는 수율의 향상과 저 가격화를 실현할 수 있다. 또, 후막 저항형 압력센서는 두 개의 저항이 다이어프램의 중앙 부근에 위치하며, 나머지 두 개의 저항은 가장자리에 위치시킴으로써 미소 변형에서도 저항값의 변화를 읽을 수 있도록 하였고, 휘스톤 브리지의 연결 도체부는 Pt를 주성분으로 하는 conductive paste(DHC7085)를 사용하였다. 이렇게 설계.제작된 압력 센서를 지지대에 고정시킨 후 캡슐에 넣고 감도, 선형성, 히스테리시스 그리고 온도특성 등을 고찰하였다.

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