• Analytical Science and Technology
• /
• v.10 no.1
• /
• pp.66-74
• /
• 1997

Influence of the axial dispersion on immobilized enzyme catalytic bed was investigated in order to examine the kinetic behavior of the biocatalysis. The enzyme employed in this study was the tyrosinase(EC 1.14.18.1) immobilized on carbon support : this system requires two substrates of phenol and oxygen. This enzyme has potential application for phenol degradation in waste water. A simulated reactor was a packed-bed reactor of 2.54cm in diameter and 10cm long, loaded with the immobilized carbon particle with an average diameter of $550{\mu}m$. A phenol feed in the strength of 55.5mM(5220ppm) was used to observe the behavior of the immobilized enzyme column at three different dissolved oxygen levels of 0.08445mM(2.7ppm), 0.1689mM(5.4ppm) and 0.3378mM(9.5ppm) with the flow rates in the range of 60(1mL/s) to 180mL/min(3mL/s). Examination of the Biot number and Damkolher numbers of the immobilized system enables us to eliminate the contribution of external mass transfer to set of differential equations derived from the dispersion model. Solution of the equation was finally obtained numerically with the application of the Danckwert boundary conditions and the assumed zero-and first order rates on the non-linear two substrate enzyme kinetics. Higher conversion of phenol was observed at the low flow rates and at the higher oxygen concentration. Comparison of axial dispersion and plug flow model showed that no detectable difference was observed in the column outlet conversion between the axial and the plug flow models which was in complete agreement with the previous studies.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.10
• /
• pp.2497-2502
• /
• 2014

The 5 wt.% Ga-doped zinc oxide (GZO) thin films were fabricated on PES substrates with various RF power 50~80 W by using RF magnetron sputtering in order to investigate the optical and electrical properties of GZO thin films. The XRD measurement showed that GZO thin films exhibit c-axis orientation. At a RF power of 70W, the GZO thin film showed the highest (002) diffraction peak with a Full-Width-Half-Maximum (FWHM) of $0.44^{\circ}$. AFM analysis showed that the lowest surface roughness (0.20 nm) was obtained for the GZO thin film fabricated at 70 W of RF power. The electrical property indicated that the minimum resistivity ($6.93{\times}10^{-4}{\Omega}{\cdot}cm$) and maximum carrier concentration ($7.04{\times}10^{20}cm^{-3}$) and hall mobility ($12.70cm^2/Vs$) were obtained in the GZO thin film fabricated at 70W of RF power. The optical transmittance in the visible region was higher than 80 %, regardless of RF power. The optical band-gap showed the slight blue-shift with increased in carrier concentration which can be explained by the Burstein-Moss effect.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.5
• /
• pp.1213-1218
• /
• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.14 no.1
• /
• pp.369-377
• /
• 2013

This paper deals with the state of charge(SOC) and life cycle evaluation algorithm for lead-acid battery, which is essential factor of the electric vehicle(EV) and the stabilization of renewable energy in the smart grid. In order to perform the effective operation of the lead-acid battery, SOC and life cycle evaluation algorithm is required. Specific gravity with the change of electrolyte temperature inside battery case should be obtained to evaluate the SOC of lead-acid battery, however it is difficult to measure the electrolyte temperature of sealed type lead-acid battery. To overcome this problem, this paper proposes the equation of thermal transmission to compensate internal temperature of the lead-acid battery. Also, it is difficult to exactly evaluate the life cycle of battery, depending on the operation conditions of lead-acid battery such as charging and discharging state, self discharging rate and environmental issue. In order to solve the problem, this paper presents the concept for gravity accumulation of charge and discharge cycle, which is the value converted at $20^{\circ}C$. By using the proposed algorithm, this paper propose the test device based on the Labview software. The simulation results show that it is a practical tool for the maintenance of lead-acid battery in the field of industry.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.113-113
• /
• 2000

직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

• Membrane Journal
• /
• v.11 no.4
• /
• pp.190-203
• /
• 2001

In this study the discharged wastewater from a paper plant was filtrated by 4 kinds of tubular carbon ceramic ultrafiltration membranes with periodic water-back-flushing. We could investigate effects of watch-back-flushing period, transmembrane pressure (TMP) and flow rate, and find optimal operating conditions. The back-f1ushing time (BT) was fixed at 3 sec, and fi1tration times (FT) werc changed in 15~60 scc, TMP in 1.00~2.50$kg_{f}$/$cm^2$, and the flow rates in 0.27~1.75 L/min. The optimal conditions were discussed in 7he viewpoints of dimensionless permeate flux (J/J$_{0}$), total permeate volume ($V^T$) and resistance of membrane fouling ($R^f$). Optima1 back-flushing period was BT/FT=0.20, suggesting that the frequent back-flushing should decrease membrane fouling. Optimal TMP in the viewpoint of $V^T$ was 1.00~1.55$kg_{f}$/$cm^2$, suggesting that rising TMP should increase membrane fouling and decrease permeate flux. But, rising f1ow rate should decrease membrane fouling and increase permeate flux. Then, average rejection rates of pollutants filtratedby carbon ceramic membranes were 88~98 % for turbidity, 48~72% fort $COD_{cr}$ and 37~76% for TDS.

• Membrane Journal
• /
• v.13 no.3
• /
• pp.162-173
• /
• 2003

The pseudo n-type polyaniline was prepared by doping of camphorsulfonic acid(CSA) and dodecylbenzenesulfonic acid(DBSA) as the dopants in solvent of N-methyl-2-pyrrolidinone(NMP). The dopants in polymer structure was qualitatively analyzed using FT-IR. The influence on electrochemical properties with dopant concentration of PANI film were investigated. The electrochemical characteristics of the n-type PANI electrode that coated on ITO were evaluated by cyclic voltammetry(CV) and AC impedance method. The prepared PANI were confirmed as n-type PANI from FT-IR and CV. The charge transfer resistance of film on PANI/CSA electrode were measured as 1.14{\sim}1.09k{\mu}$by AC impedance. The charge transfer resistance of PANI/DBSA electrode decreased with increasing the mole ratio of DBSA as 27.73{\sim}8.37 k{\mu}$. The double layer capacitance of PANI/CSA electrode was showed almost constant value as $13.47{\sim}14.59 {\mu}F$ and that of PANI/DBSA electrode increased with increasing mole ratio of DBSA from 0.49 to $1.20 {\mu}F$.

• Membrane Journal
• /
• v.12 no.1
• /
• pp.8-20
• /
• 2002

In this study using $N_2$-back flushing, which wwas not the general back-flushing method of membranes, the discharged wastewater from a paper plant was filtrated by 4 kinds of tubular carbon ceramic ultrafiltration membranes. We could in vestigate effects of $N_2$-back flushing period, transmembrane pressure (TMP)and flow rate and find optimal operating conditions. The $N_2$-back flushing time (BT) was fixed at 40 sec, filtration times (FT) were changed in 4~32 min, TNP in $1.0~3.0kg_f/cm^2$ the flow celocities in 0.53~1.09cm/s. The optimal conditions were discussed in the viewpoints of dimensionless permeate flux ($J/J_0$), toal permeate volume ($V_T$) and resistance of membrane fouling ($R_f$). Optimal back-flushing period was BT/FT=0.167 (FT=8 min ), in which more $V_T$ was obtained than that in BT/FT=0.083 (FT=4 min) which was the most friquent back-flushing condition. Then rising TMP should increase the driving force, and more $V_T$ could be accumulated. And rising flow rate should decrease membrane fouling increase permeate flux, and more $V_T$could be produced. Average rejection rates of pollutants were higher than 95% for turbidity and 45~83% for $COD_{Cr}$, but rejection rates of total dissolved solid (TDS) were lower than 10%.

• Journal of Sericultural and Entomological Science
• /
• v.49 no.2
• /
• pp.60-66
• /
• 2007

This study was carried out to develop the utilization of mulberry resources conserved by Jeollabuk-Do Agricultural Research & Extension Services. Mulberry accessions were tested for agronomic characteristics and antioxidant capacity according to varieties. From that result, three suitable varieties such as 'Sinilppong', 'Suwonsang 2' and 'Ilbongeum' were selected for the production of mulberry leaves. They have strong agronomic characteristics like size, yield and resistance against damages by blight and harmful insects. Whereas, 'Gumunyoung' showed the lowest freezing resistance. In the antioxidant capacity analysis of mulberry leaves, autumn's mulberry leaves showed higher antioxidant capacity (ascorbic acid equivalent) than that of spring's it. According to collection time, antioxidant capacity were 2,109.8 nmol (August), 2,617.8 nmol (September) and 3,311.5 nmol (October), respectively.

• Journal of the Korean Vacuum Society
• /
• v.22 no.4
• /
• pp.188-192
• /
• 2013

Many studies have been conducted for preventing from diffusion between silicon wafer and metallic thin film due to a decrease of line-width and multi-layer thin film for miniaturization and high integration of semiconductor. This paper has focused on the nano-mechanical property of diffusion barrier which sample is prepared for various gas flow rate of nitrogen with tungsten (W) base from 2.5 to 10 sccm. The deposition rate, resistivity and crystallographic properties were measured by a ${\beta}$-ray back-scattering spectroscopy, 4-point probe and x-ray diffraction (XRD), respectively. We also has investigated the nano-mechanical property using the nano-indenter. As a result, the surface hardness of W-N thin film was increased rapidly from 10.07 to 15.55 GPa when the nitrogen gas flow was increased from 2.5 to 5 sccm. And the surface hardness of W-N thin film had 12.65 and 12.77 GPa at the nitrogen gas flow of 7.5 and 10 sccm respectively. These results were decreased by the comparison with the W-N thin film at nitrogen gas flow of 5 sccm. It was inferred that these severe changes were caused by the stoichiometric difference between the crystalline and amorphous state in W-N thin film. In addition, these results were caused by increased compressive stress.