• Journal of the Korean Vacuum Society
• /
• v.17 no.1
• /
• pp.34-39
• /
• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.

• Journal of Powder Materials
• /
• v.25 no.1
• /
• pp.1-6
• /
• 2018

Uniform $TiO_2$ blocking layers (BLs) are fabricated using ultrasonic spray pyrolysis deposition (USPD) method. To improve the photovoltaic performance of dye-sensitized solar cells (DSSCs), the BL thickness is controlled by using USPD times of 0, 20, 60, and 100 min, creating $TiO_2$ BLs of 0, 40, 70, and 100 nm, respectively, in average thickness on fluorine-doped tin oxide (FTO) glass. Compared to the other samples, the DSSC containing the uniform $TiO_2$ BL of 70 nm in thickness shows a superior power conversion efficiency of $7.58{\pm}0.20%$ because of the suppression of electron recombination by the effect of the optimized thickness. The performance improvement is mainly attributed to the increased open-circuit voltage ($0.77{\pm}0.02V$) achieved by the increased Fermi energy levels of the working electrodes and the improved short-circuit current density ($15.67{\pm}0.43mA/cm^2$) by efficient electron transfer pathways. Therefore, optimized $TiO_2$ BLs fabricated by USPD may allow performance improvements in DSSCs.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.5
• /
• pp.39-48
• /
• 2000

We newly proposed a polymer based vertical asymmetric optical coupler, which was characterized by simple fabricating procedure and short coupling length. And we fabricated a thermo-optic modulator using the polymeric optical coupler. We optimized the proposed device by coupling characteristic analysis. In a TE polarized 1.33${\mu}{\textrm}{m}$ wavelength, we obtained very short coupling length(L=277.6${\mu}{\textrm}{m}$) with 0.4${\mu}{\textrm}{m}$ thickness of middle layer, high coupling efficiency(94%), and asymmetric vertical waveguides with n$_{u}$ = 1.522, n$_{l}$ = 1.51. We implemented vortical asymmetric thermo-optic modulator with lower inverted rib waveguide and upper slab waveguide. In the 600Hz bandwidth and 4.5㎽ input power, the extinction ratio of the mode was 17㏈ with an insertion loss of 4.5㏈.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.190-198
• /
• 2010

Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

• Polymer(Korea)
• /
• v.29 no.5
• /
• pp.486-492
• /
• 2005

Into a no-conjugated polymer chain we have introduced side chains with a styrene-linked triphenylamine segment as a $\pi-electron$ donor, styrene-]inked aminobenzaldehyde segment as a tunable reactive -CHO group, and PM (4-(dicyanomethylene)-2-(tert-butyl)-4H-pyran) moiety as a $\pi-electron$ acceptor for red emitting materials. The thermal stability and the optical properties of the statistical copolymers have been studied. All the polymers were electrochemically active and showed electroluminescent emission at around 700nm. The EL device of P5-PM based on the sturcture of $ITO/PPV/polymer/BCP/Alq_3/Al$ showed a maximum brightness of $120cd/m^2\;at\;50mA/cm^2$ with an external quantum efficiency of $0.67\%$. It was possible to enhance the external quantum efficiency by balancing the charge recombination. A red-emitting polymer with high external quantum efficiency was developed by incorporating bifunctionality.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.133-133
• /
• 2012

일반적으로 TiO2는 광촉매 작용으로 표면 살균성을 가지며, 친수특성으로 인한 자가세정 능력도 가지고 있다. 또한 지구상에 많이 존재하는 광물로 원료의 가격이 저렴하다는 장점이 있어 산업 전반에 사용되고 있다. 하지만 외부의 환경적 오염으로 인한 광촉매 반응 면적의 감소에 따라 반응효율이 저하되는 단점이 있으며, SiO2는 투명한 유리와 같이 비정질상태가 안정하고 높은 굴절률을 가지며 내구성이 외부환경에 강해 무반사 코팅이나 금속박막의 보호층으로 주로 사용된다. WO3는 높은 굴절률과 가시광선 영역에서의 우수한 투과율을 가지고 있으나 conduction band에서 생성된 광캐리어들이 빠르게 재결합 하여 광분해 효율이 좋지 않기 때문에 흔히 쓰이지 않고 있다. 이러한 박막들의 단점을 보완하기 위해 물리적 구조를 변화시켜 반응 면적을 극대화하기 위해 버퍼층이나 다층박막을 사용하는 등 다양한 연구가 진행되고 있다. 본 실험에서는 Slide glass에 Plasma etching 하였을때 친수성이 나타나는 특성을 이용하여 대면적 코팅과 표면 경도를 우수하게 만들 수 있는 RF Magnetron sputtering법으로 Slide glass에 Ar Gas 분위기에서 각 파워별 Plasma etching한 후 TiO2, SiO2, WO3 박막을 증착하여 광학적, 구조적 특성을 분석하였다. 광투과율 측정장치(UV-VIS Spectrophotometer)를 사용하여 투과율을 측정한 결과 모든 박막이 가시광 영역에서 80% 이상의 높은 투과율을 나타내었으며, 접촉각 측정결과 100w로 etching한 glass에 TiO2를 증착한 박막에서 가장 낮은 $3^{\circ}$ 이하의 접촉각을 나타내었다. SEM (Scanning Electron Microscope) 분석을 통해 표면구조를 관찰한 결과 100w로 etching한 후 TiO2를 증착한 박막이 가장 조밀한 구조를 보였으며, AFM (Atomic Force MicroScope) 분석 결과 100w로 etching한 후 TiO2를 증착한 박막의 표면이 가장 거칠어지는 것을 볼 수 있었는데, 이는 물과 닿는 박막의 유효 표면적의 증가로 인하여 광촉매 효과가 증가하였기 때문에 친수성이 향상된 것으로 사료된다. 이러한 박막은 건물 유리벽과 자동차의 내 외장재 전자기기용 광학 필름에 자가세정, 내반사 코팅소재, 디스플레이 표시장치로 활용할 수 있을 것으로 예상된다. 본 연구는 중소기업청에서 지원하는 2011년도 산학연 공동기술개발 지원사업의 연구수행으로 인한 결과물임을 밝힙니다.

• Applied Chemistry for Engineering
• /
• v.30 no.4
• /
• pp.499-503
• /
• 2019

Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.

• Applied Chemistry for Engineering
• /
• v.19 no.3
• /
• pp.299-303
• /
• 2008

A thermally cross-linkable polymer, poly[(2,5-dimethoxy-1,4-phenylenevinylene)-alt-(1,4-phenylenevinylene)] (Cross-PPV), was synthesized by the Heck coupling reaction. In order for the polymer to be cross-linkable, 20 mol% excess divinylbenzene was added. The chemical structure of Cross-PPV and thermally crosslinked Cross-PPV were confirmed by FT-IR spectroscopy. From the FT-IR, UV-Vis, and PL spectral data, thermally crosslinked Cross-PPV was insoluble in common organic solvents. The HOMO and LUMO energy level of thermally cross-linked Cross-PPV were estimated -5.11 and -2.56 eV, respectively, which were determined by the cyclic voltammetry and UV-Vis spectroscopy. From the energy level data, one can easily notice that thermally crosslinked Cross-PPV can be used for hole injection layer effectively. Bilayer structured device (ITO/crosslinked Cross-PPV/PM-PPV/Al) was fabricated using poly(1,4-phenylenevinylene-(4-dicyanomethylene-4H-pyran)-2,6-vinylene-1,4-phenylenevinylene-2,5-bis(dodecyloxy)-1,4-phenylenevinylene (PM-PPV) as the emitting layer, which have HOMO and LUMO energy levels of -5.44 eV and -3.48 eV, respectively. The bilayered device had much enhanced the maximum efficiency (0.024 cd/A) and luminescence ($45cd/m^2$) than those of a single layer device (ITO/PM-PPV/Al, 0.003 cd/A, $3cd/m^2$). The enhanced performance originated from that fact that cross-linked Cross-PPV facilitatse the hole injection to the emissive layer and the injected hole and electron from ITO and Al are recombined in emitting layer (PM-PPV) effectively.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.7
• /
• pp.16-19
• /
• 2019

A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

• Journal of the Korean Electrochemical Society
• /
• v.17 no.1
• /
• pp.71-77
• /
• 2014

The performance of catalysts for the recombination of oxyhydrogen gas was measured and compared with the results obtained from theoretical model. The oxyhydrogen gas was generated by the electrolysis cell and recombined through the fixed bed catalytic reactor. The yield that is the ratio of water-amount produced to the water-amount consumed in the electrolysis cell was increased with the increase of KOH concentration in electrolysis cell and the applied current. The catalyst 1 showed the best performance and the yield was under 60 %. The faradic yield calculated by Faraday's law showed about 100% in maximum with catalyst 1. The production rate of water generated by the recombination was 5-40 g/day dependent on the flow rate of mixed gas. Considering the results calculated from the pseudo-homogeneous catalytic reactor model, the hot point inside the reactor was moved to the direction of outlet and the maximum temperatures were $440-480^{\circ}K$ when the gas flow rate increased. The production rate of water calculated from the theoretical model showed good agreement with experimental results below the flow rate of $0.5cm^3/sec$, but there were much differences above that flow rate.