• Title/Summary/Keyword: 자화 용이축

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Effects of an Underlayer on the Development of Perpendicular Magnetic Anisotropy in Co/Ni Multilayers (Co/Ni 다층박막의 수직자기이방성 발현에 대한 하지층의 영향)

  • Lee, K.S.;Lee, K.J.;Jung, M.H.;Shin, K.
    • Journal of the Korean Magnetics Society
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    • v.18 no.3
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    • pp.94-97
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    • 2008
  • We investigated how the magnetic anisotropy in $[Co(2\;{\AA})/Ni(8\;{\AA})]{\times}N$ multilayers varied with the type and thickness of an underlayer. The magnetic measurements clearly showed that the perpendicular magnetic anisotropy could be developed in the Co/Ni multilayer by adopting an underlayer with [111] texture. The coercivity of the Co/Ni multilayer increased from 99 Oe to 430 Oe as the thickness of an Au underlayer increased from $50\;{\AA}$ to $500\;{\AA}$. The increase in coercivity is ascribed to the development of the stronger [111] texture in the Co/Ni multilayer as an Au underlayer gets thicker.

Soft Magnetoresistive Properties of Conetic Thin Film Depending on Ta Buffer Layer (버퍼층 Ta에 의존하는 코네틱 박막의 연자성 자기저항 특성)

  • Choi, Jong-Gu;Hwang, Do-Guwn;Lee, Sang-Suk;Choi, Jin-Hyub;Lee, Ky-Am;Rhee, Jang-Rho
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.197-202
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    • 2009
  • The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.

Brillouin Light Scattering Study of Magnetic Anisotropy in GaAs/Fe/Au System (Brillouin Light Scattering을 이용한 GaAs/Fe/Au 구조의 자기이방성)

  • Ha, Seung-Seok;You, Chun-Yeol;Lee, Suk-Mock;Ohta, Kenta;Nozaki, Takayuk;Suzuki, Yoshishige;Roy, W. Van
    • Journal of the Korean Magnetics Society
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    • v.18 no.4
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    • pp.147-153
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    • 2008
  • It has been well-known that the Fe/GaAs heterostructure has a small lattice mismatch of 1.4% between Fe and GaAs, and the Fe layer is grown epitaxially on the the GaAs substrate. There are rich physics are observed in the GaAs/Fe interface, and the spininjection is actively studied due to its potential applications for spintronics devices. We fabricated Fe wedge layer in the thickness range $0{\sim}3.4$ nm on the GaAs(100) surface with 5-nm thick Au capping layer. The magnetic anisotropy of the Fe/GaAs system was investigated by employing Brillouin light scattering(BLS) measurements in this study. The spin wave excitation of Fe layer was studied as the function of intensity and the in-plane angle of external magnetic field, and thickness of Fe layer. Also these various dependences were analyzed with analytic expression of spin wave surface mode in order to determine the magnetic anisotropies. It has been found that the GaAs/Fe/Au system has additional uniaxial magnetic anisotropy, while the bulk Fe has biaxial anisotropy. The uniaxial anisotropy shows increasing dependency respected to decreasing thickness of Fe layer while biaxial anisotropy is reduced with Fe film thickness. This result allows the analysis that the uniaxial anisotropy is originated from interface between GaAs surface and Fe layer.

Thermal Annealing Effect on Ferromagnetic Resonance Properties in CoFeB/MgO Thin Film (CoFeB/MgO 박막 재료의 열처리에 따른 강자성공명 특성)

  • Yoon, Seok-Soo;Kim, Dong-Young
    • Journal of the Korean Magnetics Society
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    • v.21 no.1
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    • pp.10-14
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    • 2011
  • We have measured the ferromagnetic resonance (FMR) signal in as deposited and $400^{\circ}C$ annealed CoFeB/MgO thin film to investigate the annealing effect on magnetic anisotropies and FMR linewidth (${\Delta}H_{PP}$). The uniaxial anisotropy field ($H_{K1}$) was only observed in the as deposited sample. Whereas, in the $400^{\circ}C$ annealed sample, the biaxial anisotropy field ($H_{K2}$) was additionally observed in accompany with uniaxial anisotropy field ($H_{K1}$). The appearance of biaxial anisotropy fields was originated from the crystalline growth of bcc CoFeB(001) from the MgO(001) interface and by the B diffusion during thermal annealing. Also, the ${\Delta}H_{PP}$ of $400^{\circ}C$ annealed sample was increased compared with that of as deposited sample, which was due to the broad distribution of the magnetization axis by the biaxial anisotropy.

Magnetoresistive Properties of Array IrMn Spin Valves Devices (어레이 IrMn 스핀밸브 소자의 자기저항특성 연구)

  • Ahn, M.C.;Choi, S.D.;Joo, H.W.;Kim, G.W.;Hwang, D.G.;Rhee, J.R.;Lee, S.S.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.156-161
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    • 2007
  • To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.

Enhancement for Magnetic Property of Ba-ferrite for Perpendicular Magnetic Recording Using Ultrasonic Dispersion (초음파 분산에 의한 수직자기기록용 Ba-ferrite의 자기적 특성 향상)

  • Choi, Hyun-Seung;Kim, Chang-Gon;Jang, Hak-Jin;Jung, Ji-Hyung;Yoon, Seog-Young;Kim, Tae-Ok
    • Journal of the Korean Ceramic Society
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    • v.39 no.8
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    • pp.758-763
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    • 2002
  • The various ultrasonic energies (28 kHz, 40 kHz, 70 kHz) were used to improve the magnetic properties of Ba-ferrite as the perpendicular magnetic recording materials. In the sheet formation process, the different orientation hars were used to orientate perpendicularly the dispersed Ba-ferrite to sheet. Throughout these experiments, we have obtained relatively higher value of S. Q. (Squreness Ratio : 0.783) and O. R. (Orientation Ratio : 2.87) magnetic properties at 2 h ultrasonic treatment of 40 kHz ultrasonic energy. With aid of SEM(Scanning Electron Microscopy) images, the obtained sheet with dispersed of Ba-ferrite could be used for perpendicular magnetic recording due to orientated to easy magnetization axis, c-axis. In addition, the value of S. Q. of sheet decreased with increasing applied magnetic field angle during measuring of S. Q. value with changing applied magnetic field angle by VSM (Vibrating Sample Magnetrometer). This result also induced the probability for prependicular magnetic recording.