• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.5-6
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• 2007

반투명 전도성 음극 (semi-transparent conducting cathode)인 Ba (x nm)/Au (20 nm)/ITO (100 nm)을 이용하여 전면발광 유기전계 발광 소자 (top-emitting organic light-emitting didodes, TEOLEDs)를 제작했다. Ba과 bis(8-quinolinolato)aluminum (III) ($Alq_3$) 계면의 전자구조는 엑스선 광전자 분광법 (X-ray photoelectron spectroscopy, XPS), 자외선 광전자 분광법 (ultraviolet photoelectron spectroscopy, UPS) 및 가까운 끝머리 엑스선 흡수 미세구조 (near-edge x-ray absorption fine structure, NEXAFS) 스펙트럼의 광 방출 특성을 통하여 조사되었다. $Alq_3$/Ba 계면 특성에 있어서 XPS와 NEXAFS 특성에 의하면, $Alq_3$ (10.0 nm) 위에 Ba이 연속적으로 증착됨에 따라 Ba으로부터 $Alq_3$로의 전자전달 (electron charge transfer) 특성은 꾸준희 증가된다. 그러나 Ba의 두께가 1.0 nm 이상 초과되면 Ba의 전자전달에 기인한 반응성때문에 $Alq_3$의 분자구조가 해리된다. 한편, 제작된 TEOLEDE의 전류-전압-휘도 곡선의 경우에서도 바륨의 증착 두께가 1.0 nm일 때 가장 우수한 구동특성을 나타냈다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.282-282
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• 2013

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 차세대 전자재료로써 유망한 후보로 간주되어 왔다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization)등의 방법으로 그래핀의 전도도를 향상시킬 수 있었다. 그러나 이러한 방법들은 기판의 표면을 거칠게 하며, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가 조립 단층막법(Self-Assembled Monolayers; SAMs)을 이용하여 기판을 기능화한 후 그 위에 그래핀을 전사하면, 자가 조립 단층막의 기능기에 따라 그래핀의 일함수를 조절 가능하고 운반자 농도나 도핑 유형을 변화시켜 소자의 전기적 특성을 최적화 할 수 있다 [1-3]. 본 연구에서는 PET(polyethylene terephthalate) 기판에 SAMs를 이용하여 유연하고 투명한 그래핀 전극을 제작하였다. 자외선 오존처리 (UV ozone treatment)를 이용하여 PET 기판 표면 위에 하이드록실 기(Hydroxyl group; -OH)를 기능화 화였고 이를 접촉각 측정(Contact angle measurement)을 통해 확인하였다. 또한 3-Aminopropyltriethoxysilane(APTES)와 톨루엔 (toluene)을 이용하여 PET 기판 표면 위의 하이드록실 기 위에 아민 기(Amine group; -NH2)를 기능화 하였고 이를 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)으로 분석하였다. 이렇게 만들어진 PET기판 표면 위에 화학적 기상 증착법을 이용하여 합성한 대면적의 균일한 그래핀을 전사하였다. NH2그룹에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 전류-전압 특성곡선(I-V characteristic curve)을 이용하여 확인하였다. 본 연구 결과는 유연하고 투명한 기판 위에 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.166-170
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• 1993

In the initial stages of oxidation of Si(111)-7${\times}$7 held at 40K through exposing molecular oxygen, it has been detected average work-function measured by ultraviolet photoelectron spectroscopy (UPS) is about 0.4eV higher than the local work-function of the modified area measured by photoemission for adsorbed Xenon (PAX). This result indicates that the increment of work-function at the initial oxidation stages of Si(111)-7${\times}$7 is mainly due to the moleculary adsorbed oxygen. From the shift of broadened Xe 5p and Xe 3d, it has also been estimated that the work-function of the modified area is 0.6eV higher than that of the clean area.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.184-190
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• 1991

Oxygen chemisorption on single crystal ZrC(111) surface was studied by high-resolution electron energy loss and ultraviolet photoelectron spectroscopy. At a low amount of oxygen exposure, adsorbed oxygen atoms construct $(\sqrt{3}{\times}\sqrt{3})R30^{\circ}$ structure. On the other hand, oxygen adsorption changes into $1{\times}1$ structure as the amount of oxygen exposure increases. The adsorbed oxygen atoms show smaller vertical distance from the Zr topmost layer in the $1{\times}1$ structure than in the $(\sqrt{3}{\times}\sqrt{3})R30^{\circ}$ structure and approach to the bridge site rather than 3-fold hollow site. The two different oxygen adsorption behavior comes from the two different surface stales of the clean ZrC(111) surface.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.197-204
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• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.73-77
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• 2008

Purpose: This research is that prepare amorphous or crystalline ZnO thin films with pure strong UV emission on soda-lime-silica glass (SLSG) substrates by low-temperature annealing. Methods: Growth characteristic and optical properties of the amorphous or nano-crystalline ZnO thin films prepared on soda - lime - silica glass substrates by chemical solution deposition at 100, 150, 200, 250 and $300^{\circ}C$ were investigated using X-ray diffraction analysis, ultraviolet - visible - near infrared spectrophotometer, and photoluminescence. Results: The films exhibited an amorphous pattern even when finally annealed at $100^{\circ}C{\sim}200^{\circ}C$ for 60 min, while crystalline ZnO was obtained by prefiring at 250 and $300^{\circ}C$. The photoluminescence spectrum of amorphous ZnO films shows a strong NBE emission, while the visible emission is nearly quenched. Conclusions: These results indicate it should be possible to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below $200^{\circ}C$, in the future.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.1
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• pp.101-112
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• 2015

II~VI compound semiconductors, $Zn_xCd_{1-x}S$ thin films have been synthesized onto indium-tin-oxide(ITO) coated glass substrates using thermal evaporation technique. The composition ratio x($0{\leq}x{\leq}1$) was varied to fabricate different kinds of $Zn_xCd_{1-x}S$ thin films including CdS(x=0) and ZnS(x=1) thin films. Then, the deposited thin films were thermally annealed at $400^{\circ}C$ to enhance their crystallinity. The chemical composition and electronic structure of films were investigated by using X-ray photoelectron spectroscopy(XPS). The optical energy gaps of the samples were determined by ultra violet-visible-near infrared(UV-Vis-NIR) spectroscopy and were found to vary in the range of 2.44 to 3.98 eV when x changes from 0 to 1. Finally, we measured the THz characteristics of the $Zn_xCd_{1-x}S$ thin films using THz-TDS(time domain spectroscopy) system to identify the capability for electronic and optical devices in THz region.

• Applied Chemistry for Engineering
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• v.29 no.3
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• pp.336-341
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• 2018

In general, the synthesis of poly(3-hexylthiophene)(P3HT)-based block copolymers requires at least a 4-5 step process. To control the molecular weight, molecular weight distribution, and block ratio, the reaction conversion and time should be monitored. In addition, the reaction scale usually limited to several mg to g was difficult to increase due to the limitations of living radical polymerizations. In this study, we synthesized P3HT-b-poly(4-vinylprydine) (P3HT-b-P4VP) with a final product quantity of > 19 g via a 2-step synthetic method with an anionic polymerization. In this method, the molecular weight and molecular weight distribution of P3HT-b-P4VP can be well controlled without monitoring the reaction conversion. We also studied physical properties of P3HT-b-P4VP depending on different solvent systems, which were investigated by UV-vis spectroscopy, atomic force microscopy, and ultraviolet photoelectron spectroscopy.

• Clean Technology
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• v.26 no.4
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• pp.311-320
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• 2020

In this study, the photocatalytic degradation of rhodamine B (RhB), methyl orange (MO) and methylene blue (MB) was carried out under visible light irradiation using CdS and CdZnS/ZnO photocatalysts prepared by a simple precipitation method. This study focused on examining the effect of physicochemical properties of dye and photocatalyst on the reaction pathway of photocatalytic degradation. The prepared photocatalysts were characterized by XRD, UV-vis DRS and XPS. Both the CdS and CdZnS/ZnO photocatalysts exhibit an excellent absorption in the visible light and the UV light regions. It was observed that the photocatalytic degradation of MO proceeds via the same reaction mechanism on both the CdS and CdZnS/ZnO photocatalysts. However, the photocatalytic degradation of RhB and MB was found to proceed through a different reaction pathway on the CdS and CdZnS/ZnO catalysts. It is interesting to note that MB dimer was formed on the CdS catalyst at the beginning of the photocatalytic reaction, while the MB monomer was degraded during the overall photocatalytic reaction on CdZnS/ZnO. The above results may be mainly ascribed to the difference of band edge potential of the conduction band in the CdS and CdZnS/ZnO semiconductors and the adsorption property of dye on the catalysts.

• Clean Technology
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• v.21 no.4
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• pp.271-277
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• 2015

A photocatalyst which mixed by the commercialized P25-TiO₂ and a synthesized Ag_xO was used in an appropriate weight ratio to effectively produce hydrogen gas in this study. The Ag_xOs were synthesized with the conventional sol-gel method, and tetramethylammonium hydroxides were added at the synthesis process in order to stabilize the solutions, and then the solutions were heat-treated at the temperatures of -5, 25, and 50 ℃, resulted to obtain the three types of silver oxides. Physicochemical properties of the synthesized Ag_xOs were identified through X-ray diffraction analysis (XRD), scanning emission microscopy (SEM), ultraviolet-visible spectroscopy, and X-ray photoelectron spectroscopy (XPS). In the photolysis results of water/methanol (weight ratio 1:1) solution, the mixture of P25-TiO₂/Ag_xO exhibited a significantly higher hydrogen gases evolution, compared to that of pure P25-TiO₂. Additionally, the addition of H₂O₂ as an supplement oxidant and in Ag_xO synthesized at 50 ℃ improved the hydrogen production efficiency. In particular, the emitted hydrogen gases reached to 13,000 μmol during 8 hours when a mixed catalyst, Ag_xO of 0.1 g and P25-TiO₂ of 0.9 g, were used.