• Journal of Dental Rehabilitation and Applied Science
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• v.18 no.2
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• pp.113-118
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• 2002

Conventional radiograph, computed tomograph (CT), magnetic resonance image (MRI) are commonly used methods for diagnosis of oro-maxillofacial cancer. MRI is an effective tool to verify soft tissue lesion however, metal produces black artifacts in the image. Therefore, metal structure should be removed before taking MRI to diagnose head and neck cancer patients. A 52-year-old female patient with adenocarcinoma in the posterior right soft palate was referred to take a MRI before surgery. She has 7-unit porcelain fused to metal bridge in the maxilla. Eight-unit Tagis-Vectris fixed partial denture was fabricated to replace her existing PFM bridge to take a MRI without any artifact before and after surgery. The patient satisfied with her restorations in terms of esthetics, function after 11 months. Even though minor staining was detected, Tagis-Vectris restoration fixed partial denture was intact during observation period.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.2
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• pp.5-11
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• 1974

Theoretical analysis is carried out for the beat frequency generation phenomena in the IMPATT diodes an4 the experimental studies are given in parrallel. The theory is based on the space charge modulation effect introduced to the multiplication process by the input signal. Computed results show that the beat frequency output power is linearly dependent upon the signal power and self oscillating power. Also the strong dependence of the output power with respect to the diode negative resistance is found and it turns out that the larger the negative resistance, the stronger the beat frequency output power. Experimental results show a good agreement with the theoretical values. Calculated conversion gain is about -0.4[db] at 10[GHz] and the experimental value shows -6.2[db] below this value. This difference between the theoretical and the experimental values is considered to be the results of the ineffective injection of signal power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.384-393
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• 2013

In this paper, a design of planar microwave bias-tee using lumped elements was presented. The bias-tee is composed of 2 blocks; DC block and RF choke. For this design of the bias-tee, a wideband capacitor was used for DC block. For a RF choke, a series connection of inductors which have different SRFs is used for a RF choke. In the RF choke, a series connection of resistor and capacitor was added in shunt to eliminate a loss from a series resonance. The designed bias-tee was implemented by using 1608 SMT chip components. The fabricated bias-tee was measured using Anritsu 3680K fixture which enables to remove an effect of a connector. The fabricated bias-tee presented -15 dB of return loss and -1.5 dB insertion loss at 10 MHz~18 GHz.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.4
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• pp.64-72
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• 2002

The use of linear DC motor is spreaded according to industrial development. This study was objected to study the analysis of double side excitation LDM with moving magnet type. In this LDM structure, the mover made use of permanent magnet with six pieces so as to large thrust, the stator was bedded for the multi separated type winding to repress the i개n saturation. Also, double side excitation winding is suppressed to thrust ripple with stratification to zigzag type and designed to production for static thrust. Then it is important to ratio of permanent magnet to winding width at multi separate, this paper analyzed to separate to three pieces of 1:1, 1:0.84 and 1:0.5 with width ratio. The analysis method calculated the parameter useful for permeance and magnetic resistance more than FEM of complicated numerical value analysis. Through manufactured experiment system, measurement result of thrust was almost acquired to constant thrust for all displacement.

• Journal of Advanced Navigation Technology
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• v.18 no.4
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• pp.364-370
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• 2014

In this paper, high reliable trench formation technique and a novel fabrication techniques for trench gate MOSFET is proposed which is a key to expend application of power MOSFET in the future. Trench structure has been employed device to improve Ron characteristics by shrinkage cell pitch size in DMOSFET and to isolate power device part from another CMOS device part in some power integrated circuit. A new process method for fabricating very high density trench MOSFETs using mask layers with oxide spacers and self-align technique is realized. This technique reduces the process steps, trench width and source and p=body region with a resulting increase in cell density and current driving capability and decrease in on resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.88-88
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• 2011

ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Geophysics and Geophysical Exploration
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• v.10 no.2
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• pp.154-160
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• 2007

This paper compares the characteristics of three different algorithms for three-dimensional (3D) magnetotelluric (MT) modeling. These methods are developed by Mackie et al. (1994), Sasaki (1999) and Nam et al. (2007). The first and second methods are based on the finite difference method (FDM), while the last one the finite-element method (FEM). MT responses, apparent resistivities and phases, for a COMMEMI 3D-2 model show a good agreement with integral equation solutions and only minor discrepancies are found over the anomalous bodies in the 3D model. The computation time of the two methods based on FDM is short and the static divergence correction contributes to speed up. The FEM modeling scheme is accurate but slow.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.373-379
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• 2002

We investigated the evolution of magnetoresistance and magnetic property of tunneling magnetoresistive(TMR) device with microstructure and plasma oxidation time. TMR devices have potential applications for non volatile MRAM and high density HDD reading head. We prepared the tunnel magnetoresistance(TMR) devices of Ta($50{\AA}$)/NiFe($50{\AA}$)/IrMn($150{\AA}$)/CoFe($50{\AA}$)/Al($13{\AA}$)-O/CoFe($40{\AA}$)/FiFe($400{\AA}$)/Ta(($50{\AA}$) structure which have $100{\times}100\mu\textrm{m}^2$ junction area on $2.5{\times}2.5\textrm{cm}^2$ Si/$SiO_2$(($1000{\AA}$) substrates by an inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using an ICP plasma oxidation method by with various oxidation time from 30 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We found that the oxidized sample for oxidation time of 80 sec showed the highest MR radio of 30.31 %, while the calculated value regarding inhomogeneous current effect indicated 25.18 %. We used transmission electron microscope(TEM) to investigate microstructural evolution of insulating layer. Comparing the cross-sectional TEM images at oxidation time of 150 sec and 360 sec, we found that the thickness and thickness variation of 360 sec-oxidized insulating layer became 30% and 40% larger than those of 150 sec-oxidized layer, repectively. Therefore, our results imply that increase of thickness variation with oxidation time may be one of the major treasons of the MR decrease.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.2
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• pp.94-98
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• 2007

The fault current limiting characteristics of a flux-lock type superconducting fault current limiter (SFCL) considering hysteresis characteristics of a flux-lock reactor, which is an essential component of the flux-lock type SFCL, were investigated. In the normal state, the hysteresis loss of iron core in the flux-lock type SFCL does not happen due to its winding's structure. From the equivalent circuit for the flux-lock type SFCL and the fault current limiting experiments, the hysteresis curves could be drawn. Through the hysteresis curves together with the fault current level due to the inductance ratio between the primary and the secondary windings, the increase of the number of turns in the secondary winding of the flux-lock type SFCL made the fault current level increase. On the other hand, the saturation of iron core was prevented.