• 제목/요약/키워드: 자기 저항

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Magnetoresistance Variation for Rotation in Ferromagnetic Thin Films (강자성체박막의 회전에 따른 자기저항의 변화)

  • Yang, Ki-Won;Park, Sang-Chul
    • Journal of Korean Ophthalmic Optics Society
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    • v.11 no.3
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    • pp.225-229
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    • 2006
  • In our angle configuration, several peculiar characteristic behaviors of MR could be observed, the mixing of positive MR(PMR) and negative MR(NMR) in the inclined sample was observed. The complete mixing angle, ${\phi}_{mix}$ as a function of inclination angle, ${\theta}$ was observed to fit well to the relation of ${\phi}_{mix}=tan^{-1}(1+tan{\theta})$ in nickel films. The above theoretical relation was obtained by decomposing the magnetic field into the components parallel and perpendicular to the current flow and identifying ${\phi}_{mix}$ as the angle satisfying that the above two components of magnetic field were identical. We also observed that the data of ${\phi}_{mix}$ did not satisfy the above theoretical relation in the iron film. This was explained by the fact that the growth direction in the iron film was an intermediate direction of magnetization, while the growth direction in the nickel film was an easy axis of magnetization.

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Magnetoresistance effects in [Co/Cu/NiFe/Cu] Spin-valve Multilayers ([Co/Cu/NiFe/Cu] 다층박막의 자기저항효과에 관한 연구)

  • 정진봉;박창만;이기암;황도근;이상석
    • Journal of the Korean Magnetics Society
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    • v.5 no.3
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    • pp.203-209
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    • 1995
  • A study of the dependence of the magnetoresistance in $glass\[Cu_{x\AA}\NiFe_{50\AA}\Cu_{x\AA}\Co_{50\AA}](X;\=\;8,\;10,\;14,\;18,\;22,\;26,\;28,\;38,\;48,\;58\;\AA,\;N\;=\;2,\;3,\;4,\;10,\;20)$ multilayers prepared by dc magnetron sputtering on the interlayer thickness of Cu (X), the number of multylayer(N) and annealing temperature has been performed. Resistance measurement were made by four terminal method, and the magnetic field applied to perpendicular and parallel for the current. The maximum magnetoresistance(MR) ratio(%) was appeared in the vicinity of $10\;\AA$ in Cu layer, and it was oscillated with the thickness of Cu. The MR ratio was increased with the number of layers N, however the ratio for the N = 4 layers decreased rather than the N = 3 layers. The dependence of the ratio on the annealing temperature was increased to $250^{\circ}C$.

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Mössbauer Studies on Magnetoresistance in Chalcogenide Fe0.9M0.1Cr2S4 (M=Co, Ni, Zn) (Chalcogenide Fe0.9M0.1Cr2S4(M=Co, Ni, Zn)의 자기저항에 관한 Mössbauer 분광연구)

  • Park, Jae Yun;Lee, Byoung-Seob
    • Journal of the Korean Magnetics Society
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    • v.23 no.2
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    • pp.43-48
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    • 2013
  • The Jahn-Teller distortion of chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) have been investigated by M$\ddot{o}$ssbauer spectroscopy. The crystal structures of $Fe_{0.9}M_{0.1}Cr_2S_4$ (M=Co, Ni, Zn) are cubic spinel at room temperature. Magnetoresistance measurements indicate these system is conducting-semiconducting transistion around $T_C$. Below $T_C$, the asymmetric line broadening is observed and considered to be dynamic Jahn-Teller distortion. Isomer shift value of the samples at room temperature was about 0.5 mm/s, which means that charge state of Fe ions is ferrous in character. The Ni substitutions for Fe occur to increase the Jahn-Teller relaxation. CMR properties could be explained with magnetic polaron due to Jahn-Teller effect, which is different from both the double exchange interactions of manganite system and the triple exchange interactions of chalcogenide $Cu_xFe_{1-x}Cr_2S_4$.

Characteristics of Mineral Mg Dissolving Sensor in Edible Water using GMR-SV Device (거대자기저항 스핀밸브 소자를 이용한 음용수 미네랄 Mg 용해센서 특성 연구)

  • Lee, Ju-Hee;Kim, Da-Woon;Kim, Min-Ji;Park, Kwang-Seo;Kang, Joon-Ho;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.18 no.5
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    • pp.174-179
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    • 2008
  • The measurement dissolution sensor system using GMR-SV device with magnetic sensitivity of 0.8 %/Oe and Mg-film thick of 200 nm and Mg-foil thick of 50 mm was fabricated and characterized. During the water dissolving process of Mg-film and Mg-foil, the subtle variation of magnetic field by the decrease of current in solenoid was detected by the GMR-SV sensor. The variations of Mg bubble number and ORP as a function of time for three different kinds of edible, tap, and distilled water, are measured and compared. A After 45 min, the speed of fast dissolving Mg was shown the order of edible > tap > DI water. The variation of output magnetoresistance as a function of dissolved time of Mg-film and Mg-foil for edible water, which is composed of mineral content of $0.8{\sim}5.4\;mg/l$ was investigated. The response times for the dissolution in edible water were 5 min and 20 min, respectively. From the measurement of dissolving time and speed for Mg-film and Mg-foil using GMR-SV device, the mineral Mg sensor system in edible water can be possible to develop.

Effect of Co content on Magnetoresistance in Rapid Solidified CuCo ribbons (급속 응고된 CuCo 리본의 Co 조성에 따른 자기저항 변화)

  • Song, Oh-Sung;Yoon, Ki-Jeong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.2
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    • pp.120-125
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    • 2006
  • By employing a rapid solidification method and atmospheric annealing at $450^{\circ}C-1hr$, we were able to manufacture inexpensively granular CuCo alloy ribbons with thickness of $20{\mu}m$ showing giant magnetoresistance (GMR) ratio of more than 5% at a high magnetic field of 0.5T. To verify maximum MR effect, the MR ratio, saturation magnetization, and microstructure change were investigated with Co contents between 5 and 30 at%. It was possible to obtain GMR ratios of 5.2% at 1.2T, and 3% at 0.5T, which implies an appropriate MR for industrial purpose at a Co content of $8{\sim}l4%$. MR ratio was reduced rapidly at a Co content below 5% due to superparamagnetic effect and at a Co content above 20% due to agglomeration of Co clusters. Surface oxidation during rapid solidification and atmospheric annealing did not have much affect on MR ratio. Our result implies that our economic CuCo granular alloy ribbons may be appropriate for high magnetic field sensor applications with wide content range of $8{\sim}14$ at%Co.

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$NiFe/Co/Al_2O_3/Co/IrMn$ 접합의 터널링 자기저항효과

  • 홍성민;이한춘;김택기
    • Journal of the Korean Magnetics Society
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    • v.9 no.6
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    • pp.291-295
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    • 1999
  • $NiFe/Co/Al_2O_3/Co/IrMn$ tunneling junctions were grown on (100)Si wafer and their spin-valve tunneling magnetoresistance (TMR) was studied. The tunneling junctions were grown by using a 5-gun RF/DC magnetron sputter. $Al_2O_3$ barrier layer was formed by exposing Al layer to oxygen atmosphere at 6$0^{\circ}C$ for 72 hours. Strong exchange coupling interaction is observed between the ferromagnetic Co and the antiferromagnetic IrMn of Co/IrMn bilayer when IrMn is 100$\AA$ thick. $NiFe(183\;{\AA})/Co(17\;{\AA})/Al_2O_3(16\;{\AA})/Co(100\;{\AA})/IrMn(100\;{\AA})$ tunneling junction shows best TMR ratio of about 10% in the applied magnetic field range of $\pm$20 Oe. The TMR ratio is improved about 23% and electrical resistance is decreased about 34% when annealed at 200 $^{\circ}C$ for 1 hour in magnetic field of 330 Oe, parallel to the bottom electrode. With increasing the active area of junction the TMR ratio increases while electrical resistance decreases.

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Anisotropic Magnetoresistance Analysis of Permalloy Film Using 2-dimensional Magnetization Vector Measurement (2차원 자화벡터를 이용한 퍼멀로이 박막의 이방성자기저항 해석)

  • Lee, Young-Woo;Hu, Yong-Kang;Lim, Jae-Joon;Kim, Cheol-Gi;Kim, Chong-Oh;Yoon, Tae-Sick
    • Journal of the Korean Magnetics Society
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    • v.14 no.4
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    • pp.115-119
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    • 2004
  • We measured in-plane 2 dimensional magnetization vector using two pick-up coil sets and investigate the relationship between magnetization vector and anisotropic magnetoresistance. We can determine magnetization vector by measuring magnetic moment in x and y direction simultaneously. As the uniaxial magnetic anisotropy of permalloy film increases, magnetoresistance approaches the expectation which is calculated from the angle between current vector and magnetization vector. Magnetoresistance ratio is linearly proportional to the y moment magnitude which is parallel to the current direction.

Characteristics of Magnetic Tunnel Junctions Incorporating Nano-Oxide Layers (나노 산화층을 사용한 자기터널접합의 특성)

  • Chu, In-Chang;Chun, Byong-Sun;Song, Min-Sung;Lee, Seong-Rae;Kim, Young-Keun
    • Journal of the Korean Magnetics Society
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    • v.16 no.2
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    • pp.136-139
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    • 2006
  • The tunneling magnetoresistance (TMR) ratios of magnetic tunnel junctions (MTJs), in general, decrease abruptly above 250$^{\circ}C$ due to Mn interdiffusion from an antiferromagnet IrMn layer to a ferromagnetic CoFe and/or a tunnel barrier. To improve thermal stability, we prepared MTJs with nano-oxide layers. Using a MTJ structure consisting of underlayer CoNbZr 4/bufferlayer CoFe 10/antiferromaget IrMn 7.5/pinned layer CoFe 3/tunnel barrier AlO/freelayer CoFe 3/capping CoNbZr 2 (nm), we placed a nano-oxide layer (NOL) into the underlayer or bufferlayer. Then, the thermal, structural and magneto-electric properties were measured. The TMR ratio, surface flatness, and thermal stability of the MTJs with NOLs were promoted.

Effects of Demagnetization Field in Patterned Micro-magnetic Film Elements (패턴 된 미크론 자기박막 소자에서의 자기소거장 효과분석)

  • Kim, Ki-Chul;Suh, Jeong-Dae;;Lee, C.S.;Song, Y.J.
    • Journal of the Korean Magnetics Society
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    • v.13 no.3
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    • pp.103-108
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    • 2003
  • A micromagnetic model and a Stoner-Wohlfarth model are used to analyze the effect of demagnetization field in patterned permalloy films. Permalloy films of 20 $\mu\textrm{m}$${\times}$(40 $\mu\textrm{m}$∼200 $\mu\textrm{m}$) are fabricated by DC magnetron sputtering and photo lithography. Measured magnetoresistance data of patterned permalloy films are compared with simulation results. The micromagnetic model gives a better agreement with the measured MR data than the Stoner-Wohlfarth model. Based on the simulation results, we propose a revised approximation formula for dernagnetization field in Stoner- Wohlfarth model for a few fm patterned magnetic films.

Magnetoresistance Effects in Cr5S6 Single Crystal (Cr5S6 단결정의 자기저항 효과)

  • Lee, Kyung-Dong;Song, Ki-Myung;Hur, Nam-Jung
    • Journal of the Korean Magnetics Society
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    • v.20 no.6
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    • pp.207-211
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    • 2010
  • We have investigated the magnetoresistance effect in $Cr_5S_6$ single crystals prepared by vapor transport method. Room temperature X-ray diffraction (XRD) study reveals the phase formation of the single crystals with trigonal crystal structure. The magnetization was measured as a function of temperature (5 K~400 K) and applied magnetic field (0.1 T and 5 T). The magnetization curve as a function of temperature reveals the two transition states of $Cr_5S_6$: one from antiferromagnetic to ferrimagnetic state at ~150 K and the other from ferrimagnetic to paramagnetic state at ~300 K. Temperature dependent resistivity at 0 T and 5 T magnetic field shows the metallic behavior, showing the transition from antiferromagnetic to ferrimagnetic state at ~150 K. Magnetic field dependence of magnetization was measured at four fixed temperatures viz. 100 K, 150 K, 200 K, and 300 K. It is observed that at 200 K and 300 K it shows well M-H hysteresis behavior, whereas at 100 K and 150 K it shows non-hysteretic nature. A negative magnetoresistance (MR) of -2% is observed at 5 T for $Cr_5S_6$ single crystal at 150 K, near the antiferromagnetic transition temperature.