• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.162-166
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• 2012

V-I characteristics of Fe(100)/MgO(100)/Cu-phthalocyanine (CuPc)/Co hybrid magnetic tunnel junctions were investigated at different temperatures. Fe(100) and Co ferromagnetic layers were separated by an organic-inorganic hybrid barrier consisting of different thickness of CuPc thin film grown on a 2 nm thick epitaxial MgO(100) layer. As the CuPc thickness increases from 0 to 10 nm, a bistable switching behavior due to strong charging effects was observed, while a very large magenetoresistance was shown at 77 K for the junctions without the CuPc barrier. This switching behavior decreases with the increase in temperature, and finally disappears beyond 240 K. In this work, high-potential future applications of the MgO(100)/CuPc bilayer were discussed for hybrid spintronic devices as well as polymer random access memories (PoRAMs).

• Journal of the Korean Magnetics Society
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• v.19 no.6
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• pp.197-202
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• 2009

The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.61-66
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• 1999

The Spin-dependent tunneling magnetoresistance (TMR) effect was observed in $NiFe/Al_2O_3$/Co thin films. The samples were prepared by magnetron sputtering in a system with a base pressure of $3\times10^{-6}$Torr. the insulating $Al_2O_3$layer was prepared by r.f. plasma oxydation method of a metallic Al layer. The ferromagnetic and insulating layers were deposited through metallic masks to produce the cross pattern form. The junction has an active area of $0.3\times0.3\textrm{mm}^2$ and the $Al_2O_3$layer is deposited through a circular mask with a diameter of 1mm. It is very important that insulating layer is formed very thinly and uniformly in tunneling junction. The ferromagnetic layer was fabricated in optimum conditions and the surface of that was very flat, which was observed by AFM. Tunneling junction was confirmed through nonlinear I-V curve. $NiFe/Al_2O_3$/Co junction was observed for magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior of t재 ferromagnetic layer. The maximum magnetoresistance ratio was about 6.5%.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.130-131
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• 2003

The magnetic and thermal properties of NiFe/IrMn/CoFe with Mn additions have been studied. As grown CoFe pinned-layers with IrMn-Mn have dominantly larger exchange biasing field( $H_{ex}$) and blocking temperature( $T_{b}$) than when pure I $r_{22}$M $n_{78}$ is used. The magnetic properties improve, $H_{ex}$ and $T_{b}$ improve with 77-78 vol% Mn, but drop considerably with more Mn additions, losing magnetic properties of theb NiFe/IrMn/CoFe with addition 0.6 vol % Mn. The average x-ray diffraction peak ratios fcc (111)CoFe of (111)IrM $n_3$ textures for the Mn inserted total vol of 75, 77, and 79 vol% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between I $r_{22}$M $n_{78}$ and CoFe layers is almost nothing. For two multilayer as-grown samples with ultra-thin Mn layers of 77 vol % and 79 vol %, the $H_{ex}$s are 250 Oe and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was 444 Oe up to 30$0^{\circ}C$ endured of 363 Oe at 40$0^{\circ}C$, respectively. Mn additions improve the magnetic properties and thermal stabilities of NiFe/IrMn/CoFe. Those increase the $H_{ex}$ and $T_{b}$. In applications where higher $H_{ex}$ and $T_{b}$ are accept, proper concentrations of Mn can be used.n can be used.be used.

• Journal of the Korean Magnetics Society
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• v.23 no.6
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• pp.184-187
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• 2013

The influence of insertion of an ultra-thin Cu-Phthalocyanine (CuPc) between MgO barrier and ferromagnetic layer in magnetic tunnel juctions (MTJs) was investigated. In order to understand the relation between the electronic and structural properties of Fe${\backslash}$MgO${\backslash}$CuPc, the surface (or interface) analysis was carried out systematically by using spin polarized metastable He de-excited spectroscopy for the CuPc films grown on the Si(001)${\backslash}$5 nm MgO(001)${\backslash}$7 nm Fe(001)${\backslash}$1.6 nm MgO(001) multilayer structure as the thickness of CuPc increases from 0 to 5 nm. In particular, for the 1.6 nm CuPc surface, a rather strong spin asymmetry between up- and down-spin band appears while it becomes weaker or disappears for the CuPc films thinner or thicker than ~1.6 nm. Our results emphasize the importance of the interfacial electronic properties of organic layers in the spin transport of the hybrid MTJs.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.191-195
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• 2004

Tunnel junctions with AI-N barriers fabricated by microwave-excited plasma were studied. When the Al thickness, nitridation time, and annealing temperature were 1 nm (0.8 nm), 50 s (35 s), and $280^{\circ}C$ ($300^{\circ}C$), TMR ratio and resistance-area product (RA) were 49% (34%) and $3 ${\times}$ 10^4$ $\Omega$$\mu\m^2$ ($1.5 ${\times}$ 10^4$ $\Omega$$\mu\m^2$), respectively. In order to clarify the annealing temperature dependence of TMR ratio, the local transport properties were measured for Ta 5 nm/Cu 20 nm/Ta 5 nm$29_{76}$ $Fe_{24}$ 2 nm/Cu 5 nm/M $n_{75}$$Ir_{25}$ 10 nm/ $Co_{71}$ $Co_{29}$ 4nm/Al-N junction with Al thickness of 0.8 nm and nitridation time of 35s at various temperatures. The increase of TMR ratio after annealing at $300^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 34%, can be well explained by the enhancement of the average barrier height ($\Phi_{ave}$) and the reduction of its fluctuation. After further annealing at $340^{\circ}C$, the leakage current was observed and the TMR ratio decreaseded