• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.566-566
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• 2012

그래핀(Graphene)은 모든 탄소 동소체의 기본구성 요소로 2 차원 결정구조를 가지며, 양자홀 효과(quantum Hall effect), 뛰어난 열 전도도, 고 탄성, 광학적 투과성 등과 같은 탁월한 물리적 성질을 보이는 물질이다. 이러한 그래핀의 우수한 특성은 전계 효과 트랜지스터(field effect transistor), 화학/바이오 센서, 투명 전극(transparent electrode) 등의 다양한 전자소자를 개발하는 응용 가능하다. 그 중, 그래핀 투명전극의 제조는 가장 응용가능성이 높은 분야이다. 현재 투명전극 물질로는 인듐-주석 산화물(indium tin oxide; ITO)가 널리 이용되고 있으나, 인듐의 고갈로 인한 공급부족 문제 및 고 생산비용, 휘어지지 않는 취성 등의 단점을 지니고 있다. 따라서, 우수한 광학적 투과성과 전기전도성을 지닌 그래핀이 ITO의 대체 물질로서 각광받고 있다.[1-5] 본 연구에서는 그래핀의 투명전도필름의 응용을 위해 면저항을 낮추기 위한 방법으로 화학적 도핑(doping)을 이용하였다. 그래핀은 구리(copper; Cu) 호일을 촉매로 사용하여 열 화학증착법(Thermal Chemical Vapor Deposition)을 이용하여 합성하였다. 합성된 그래핀은 PMMA(Poly(methyl methacrylate)) 전사법을 이용하여 산화실리콘(SiO2) 기판에 전사 후, 염화은(AgCl)과 클로로벤젠(C6H5Cl)으로 만든 콜로이드(colloid) 용액에 디핑(dipping)하여 그래핀에 은 입자를 도핑 하였다. 그 결과, 은 입자 도핑 농도에 따라 면저항이 감소하는 양상을 보였다. 제작된 그래핀 투명전도성 필름의 투과도는 자외선-가시광선-근적외선 분광법(UV-Vis-NIR spectroscopy)를 이용하여 측정하였고, 라만 분광법(Raman spectroscopy)을 통해 그래핀 필름의 질적 우수성과 성장 균일도를 조사하였다.

• Applied Chemistry for Engineering
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• v.33 no.2
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• pp.126-132
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• 2022

Alkaline fuel cells using liquid fuels such as hydrazine and ammonia are gaining great attention as a clean and renewable energy solution possibly owing to advantages such as excellent energy density, simple structure, compact size in fuel container, and ease of storage and transportation. However, common shortcomings including cathode flooding, fuel crossover, side yield reactions, and fuel security and toxicity are still challenging issues. Real time monitoring of fuel concentrations integrated into a fuel cell device can help improving fuel cell performance via predicting any loss of fuels used at a cathode for efficient energy production. There have been extensive research efforts made on developing real-time sensing platforms for hydrazine and ammonia. Among these, recent advancements in electrochemical sensors offering high sensitivity and selectivity, easy fabrication, and fast monitoring capability for analysis of hydrazine and ammonia concentrations will be introduced. In particular, research trend on the integration of metallic and metal oxide nanoparticles and also their hybrids with carbon-based nanomaterials into electrochemical sensing platforms for improvement in sensitivity and selectivity will be highlighted.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.197-201
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• 2014

TEPC (Tissue Equivalent Proportional Counter) was usually used for high LET radiation dosimetry. We developed a prototype TEPC for micro-dosimetry in the range of $0.2{\sim}300 keV/{\mu}m$. And, the simulated site diameter of the TEPC is $2{\mu}m$, of similar size to a cell nucleus. For purposes of characterization the response for high LET radiation of the TEPC has been investigated under 135MeV/u Carbon ions in HIMAC (Heavy Ion Medical Accelerator). We determined the gas multiplication factor and measured the lineal energy spectrum [yd(y)] of 135 MeV/u Carbon ions. The value of the gas multiplication factor was 315 at 700 V bias voltage. As a result of the experiment, we could more understand the performance of the TEPC for high LET (Linear Energy Transfer) radiation. And the procedure of high LET radiation dosimetry using TEPC is established.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.184-188
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• 1999

PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with the substrate temperature up to $300^{\circ}C$. PbTe films could not form at substrate temperature above $400^{\circ}C$ because of reevaporation of the Pb. According to AFM image, the surface of films was composed of small granular crystals and flat matrix. According to the increase of substrate temperature, the grain size at film surface becomes larger. By Hall-effect measurement, the carrier concentration and Hall mobility of n-type PbTe films grown by $T_{sub}=300^{\circ}C$ were $3.68{\times}10^{18}cm^{-3}$ and $148\;cm^2/Vs$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.1-5
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• 2008

This paper analyzes on the radiation effect of silicon solar cells in a low Earth orbit satellite by using high energy electron beams. Generally, the satellite circling round in a low orbit go through Van Allen belt, in which electronic components are easily damaged and shortened by charged particles moving in a cycle between the South Pole and the North Pole. For example, Single Event Upset (SEU) by radiation could cause electronic devices on satellite to malfunction. From the ground experiment in which we used the high energy electron beam facility at Knrea Atomic Energy Research Institute (KAERI), we tried to explain sun sensor degradations on orbit could he caused by high energy electrons. While we focused on the solar cells used for light detectors, We convince our research also contributes to understand the radiation effect of solar cells generating electric powers on satellites.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.327-334
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• 2002

Fine particles of $SnO_2$ were fabricated by the sol-gel powder processing using tine(II) chloride dihydrate($SnCl_2{\cdot}2H_2O$) and ethanol($C_2H_5OH$) as raw materials. The powders were investigated about the properties and electrical sensing. Gel powders were fabricated by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_2$ phase was increased below $600^{\circ}C$ due to the elimination of volatile components, and the $SnO_2$ phase was almost completed by the heat treatment at $700^{\circ}C$ for 30min. The grain sizes were about 30nm below $700^{\circ}C$, and it showed the narrow distribution of the grain sizes. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_2$ was showed the intrinsic behaviour of semiconducting ceramics above at $450^{\circ}C$. The constant conductance was observed in the temperature range of $200{\sim}450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

• Journal of the Korean Society of Radiology
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• v.5 no.2
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• pp.97-101
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• 2011

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using double layer technique tio decrease dark current. High efficiency material in substitution for a-Se have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using Hetero junction already used as solar cell, semiconductor. Particle-In-Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in PIB method. To make up for the weak points, double layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity is measured to evaluate double layer radiation sensor material.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2019.05a
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• pp.278-280
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• 2019

Flow cytometer is one of the instrument that can measure various optical properties of a single cell or microparticle. These parameters including size, granularity, and fluorescence intensity are determined by the physical and optical interaction of the cells with excitation light source. However, users have some difficulties such as high cost, size of instrument, and limited fluorescence selectivity. In addition, abundant data is also unintentionally acquired even though user wants to have a single optical parameter. For these reasons, the use of flow cytometer is more challenging for researchers to apply their study. Therefore, the proposed study aims to develop a low-cost portable fluorescence acquisition system using a commercially available light-emitting diode and photodiode. It is designed by a 3D printer, and fluorescence selectivities are increased by changing of the light source / optical filter / detection sensor. Various number sets of fluorescently labeled cells were measured, and its feasibility was evaluated through the proposed system. As a result, acquried fluorescence intensities were proportional to the concentration of the cells and showed high linearity.