• Title/Summary/Keyword: 입력반사손실

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Design of Dual Band Antenna for Broadband Wireless LAN (광대역 무선랜용 이중대역 안테나 설계)

  • Kim, Kab-Ki
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.4
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    • pp.181-185
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    • 2017
  • In this paper, for Broadband Wireles LAN dual-band antenna was designed to satisfy the bandwidth of 2.32GHz and 5.79GHz. the substrate of proposed microstrip antenna is FR-4(er=4.3) and $34mm{\times}50mm{\times}1.5mm$ size and thickness t=0.035mm, and the simulation was used for CST Microwave Studio 2014. input return loss compared -10dB less than operates at and when gain 2.32GHz -19.321dB, 5.79GHz showed the results of -13.033dB. It increased impedance matching, minimized interference between adjacent frequencies, simplified small manufacturing methods, and demonstrated the characteristics of non-directional properties. Thus the proposed antenna satisfied the -10 dB impedancebandwidth requirement while simultaneously covering the Broadband Wireless LAN.

An Analysis and Design of Wideband Microstrip Rotman Lens by Contour Integral and Segmentation Method (경계적분법과 세그멘테이션 기법에 의한 광대역 마이크로스트립 로트만 렌즈의 해석 및 설계)

  • 이광일;오승엽
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.7
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    • pp.769-776
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    • 2003
  • This paper presents analysis and design of microstrip Rotman lens operating over wide band and wide steering angle by the contour integral method along with the segmentation method. All mutual coupling, internal reflections between ports and the discontinuity at every junction are taken into account. Equally spaced ports are designed and realized, which make suppress output ripple through the array ports. Impedance matching and mutual coupling between ports are analyzed and optimized using 12 input and 12 output exponential tapers. The measured results of fabricated lens show ${\pm}$ 1.8 dB insertion loss deviation over 6∼18 GHz wide frequency range and beam steering accuracy less than 1$^{\circ}$over ${\pm}$53$^{\circ}$angle and agrees well with the analysis results.

Design of Dual-Band, Dual-Polarized Microstrip Patch Antenna with Two Input Ports (두 입력단자를 갖는 이중대역 이중편파 마이크로스트립 패치 안테나 설계)

  • Jeong Hae-Young;Lee Kwang-Chun;Lee Sung-Jun;Choi Ik-Guen
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.11 s.102
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    • pp.1164-1170
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    • 2005
  • This paper presents a dual-band, dual-polarized microstrip patch antenna with simple dual-probe feed. The inter-port isolation and cross-polarization are greatly improved by designing feed structure with annular gap between patch and feed-probe. Measured results show that the antenna's inter-port isolation and cross-polarization in each -10 dB return loss bandwidth of $1.84\;GHz\~l.93\;GHz$ and $2.62\;GHz\~2.81\;GHz$ are greater than 21 dB, greater than 22.2 dB and greater than 27 dB, greater than 19 dB, respectively. The antenna gain is about 6.9 dBi in both frequency bands.

Design of Fractal Structure Wideband Antenna for 4G IMT-Advanced AccessPoint Applications (4세대 이동통신 Accesspoint용 Fractal구조 광대역 안테나 설계)

  • Kim, Dong-Hwan;Kim, Gab-Gi
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.14 no.1
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    • pp.195-201
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    • 2014
  • In this paper, an AccessPoint compact microstrip patch antenna was designed by using L-shaped feeding structure of a Fractal Structure and the compact antenna can be obtained by the rare formed presence of the resonance flow which is called "Crossed-Diagonal". CST's MicroWave5.0 was used for the design. As the operating characteristics of the patch antenna, it showed the characteristic of 1031 [MHz] or 29.4% in the range of 3.202 [GHz] ~ 4.233 [GHz] when an input return loss is less -10 [dB] and VSWR 2:1, also as it is in this paper, we got simulation results such as, gains of the E-plane and H-plane are 8.7 [dBi] and 8.6 [dBi] for this is the single patch, and 3 [dB] beamwidth is $43.9^{\circ}$ at E-plane and $78.7^{\circ}$ at H-plane.

원형편파의 축비 대역폭 개선을 위한 직렬 급전 십자개구 결합 마이크로스트립 안테나

  • 김형락
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.347-348
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    • 2001
  • 마이크로스트립 안테나가 가지는 가장 큰 단점인 협대역 특성을 개선하기 위해 그 동안 수많은 연 구와 방법들이 제안되었는데 특히 원형편파 안테나는 임피던스 대역폭 외에 축비 대역폭까지도 고려 되어야 하므로 더욱 심화된 협대역의 특성을 가지게 되어 설계에 많은 어려움이 있었다. 일반적으로 원형편파 마이크로스트립 안테나를 설계하는 방법 중 급전 구조면에서는 크게 단일 급전 방식과 하이 브리드 형태의 급전방식이 있다. 단일 급전 방식의 원형편파 안테나는 구조가 간단하고y 제작이 간편 하며, 안테나의 물리적 크기를 줄일 수 있어 배열시 장점이 있으나 구조의 특성상 협대역의 축비 대역 폭을 가지며I 하이브리드 급전 원형편파 안테나는 구조가 복잡하고, 제작이 어려우며, 안테나의 물리적 크기가 커진다는 단점이 있으나 광대역의 축비 대역폭을 가진다. 따라서 원형편파 안테나의 설계시 축 비 대역폭과 안테나의 물리적 크기 간의 trade-off를 고려하여야한다. 최근에는 이를 고려한 단일 급전 을 이용하면서도 개선된 축비특성올 얻을 수 있도록 십자개구 개구를 통해 두 개의 직교 모드를 방사 패치에 급전하는 구조가 제안되기도 하였다. 하지만 이는 일반적인 단일 급전 방식보다 개선된 축비 대역폭을 얻을 수 있었으나 중심주파수에서 2.5%에 불과하였다. 본 논문에서는 단일 급전 십자개구 결합 방식이 가지는 협대역의 축비 대역폭을 개선하기 위해 단 일 급전으로 하이브리드 급전의 효과를 가져올 수 있는 직렬 급전 십자개구 결합 마이크로스트립 안 테나를 제안하였으며, 기존에 발표된 단일 급전 십자개구 결합 안테나와의 축비 대역폭, 이득, 방사패 턴, 그리고 임피던스 대역폭 둥과 비교하여 개선된 특성을 제시하고 제안된 안테나의 타당성을 보였 다. 실제로 2.4GHz의 주파수에서 제안한 직렬 급전 십자개구 결합 단일 마이크로스트립 안테나의 측 정결과 기존에 연구된 안테나보다 약 2배정도 증가된 4.6%의 축비 대역폭, 10%의 임피던스 대역폭 (VSWR<1.5), 그리고 8.2dBi의 최대이득 특성을 확인할 수 있었으며, 이를 바탕으로 시권셜 로테이션 기법올 사용한 $2\times2$ 배열 안테나는 17.5%의 축비 대역폭, 20.8%의 임피던스 대역폭(VSWR<1.5), 그리 고 12.5dBi의 최대이득을 얻을 수 있었다. 이에 해당하는 제안된 단일 안태나와 $2\times2$ 배열 안테나의 구조, 측정된 축비 대역폭 및 이득특성, 그리고 입력 반사손실을 그림 I, 2, 3에 각각 나타내었다.

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An Unequal Divider with Enhanced Physical Isolation Between Output Ports (출력포트 사이의 물리적 격리도를 향상시킨 비대칭분배기)

  • Kim, Young;Yoon, Young-Chul
    • Journal of Advanced Navigation Technology
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    • v.18 no.4
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    • pp.359-363
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    • 2014
  • This paper presents the design and performance of an unequal divider with physical separation and electrical isolation. This divider has a series $18{\Omega}$ resistor and 0.7 pF capacitor circuit between two quarter-wave transmission lines at half phase angle from input terminal. This design method was improved a physical isolation between output ports and easy connected other circuit because of unnecessary of extra transmission line. To show the validity of the unequal divider with complex isolation components, a 4:1 ratio unequal divider was designed and measured at center frequency of 2 GHz. The measured divider performances have the return loss of 17 dB, insertion loss of 1.5 dB and 7.7 dB, and isolation of 18 dB. Its performance is in good agreement with the simulated results.

The Design of Miniature Microstrip Fractal Patch Antenna Using L-shaped Feeding Structure. (L-형급전구조를 이용한 소형 마이크로스트립 Fractal 패치 안테나 설계)

  • Park, Chang-Hyun;Yoon, Chi-Mu;Kim, Kab-Ki
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.10a
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    • pp.863-867
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    • 2007
  • In this paper, We have designed miniature microstrip patch antenna based on fractal structure using L-shaped feeding structure for 4G mobile communication applications. Miniature antenna has achieved by the presence of unusual fundamental resonant mode which we call "crossed-diagonal"(CD)current. Using CST Microwave Studio 5.0, patch antenna was designed. The simulated input return loss showed the bandwidth of 1.2647[GHz]($2.944{\sim}4.209GHz$), 35.4% below -10dB. The gain of E, H-plane was achieved 8.3dBi and 8.4dBi respectively. And beamwidth of 3dB in the E, H-plane was $40.6^{\circ}$ and $81.6^{\circ}$, respectively.

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The Characteristic Analysis of Microstrip Slot antennal with T-Shaped Feed Line (T-모양 급전선을 갖는 마이크로스트립 슬롯 안테나의 특성 분석)

  • 장용웅;윤종철;박익모;신철재
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.5
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    • pp.630-639
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    • 1998
  • In this paper, a T-shaped microstrip feed line is proposed for a better impedance matching to the microstrip slot antenna in a various range of slot widths. It was found that the bandwidth of this antenna is proportional to the slot width. It was also found that the radiation resistance of this feed line structure is quite constant and low regardless to the slot width. A slot antenna with T-shaped microstrip feed line is analyzed by using the FDTD method. At first, the propagation process of the reflected wave and the electric field distribution in the time domain is calculated respectively. The antenna parameters also are optimized to get maximum band width, return loss, input impedance, and radiation pattern in the frquency domain by Fourier transforming the time domain results. From the computed results, the optimum slot antenna is designed and fabricated. When the slot width is 16 mm, approximately 35% of bandwidths are obtained without a matching circuit. These computed results using FDTD method were in relatively good accordance with the measured values.

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The Design and Fabrication of X-Band MMIC Low Noise Amplifier for Active antennal using P-HEMT (P-HEMT를 이용한 능동 안테나용 X-Band MMIC 저잡음 증폭기 설계 및 제작)

  • 강동민;맹성재;김남영;이진희;박병선;윤형섭;박철순;윤경식
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.9 no.4
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    • pp.506-514
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    • 1998
  • The design and fabrication of X-band(11.7~12 GHz) 2-stage monolithic microwave integrated circuit(MMIC) low noise amplifier (LNA) for active antenna are presented using $0.15{\mu}m\times140{\mu}m$ AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (P-HEMT). In each stage of the LNA, a series feedback by using a source inductor is used for both input matching and good stability. The measurement results are achieved as an input return loss under -17 dB, an output return loss under -15dB, a noise figure of 1.3dB, and a gain of 17 dB at X-band. This results almost concur with a design results except noise figure(NF). The chip size of the MMIC LNA is $1.43\times1.27$.

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2~16 GHz GaN Nonuniform Distributed Power Amplifier MMIC (2~16 GHz GaN 비균일 분산 전력증폭기 MMIC)

  • Bae, Kyung-Tae;Lee, Ik-Joon;Kang, Hyun-Seok;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.11
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    • pp.1019-1022
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    • 2016
  • In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.