• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.34-39
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• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.

• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.499-503
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• 2019

Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.35 no.3
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• pp.204-211
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• 2007

Experiments were conducted to investigate the failure and strengths of carbon composite-to-aluminum single-lap bonded joints with 5 different bonding lengths. Joint specimens were fabricated to have secondary bonding of laminate and aluminum with a film type adhesive, FM73m. Tested joints have the bonding strengths between the values of aluminum-to-aluminum joints and composite-to-composite joints. In the joints with bonding length-to-width ratio smaller than 1, the strength decreases as the bonding length increases. In the joints with the ratio larger than 1, however, the strength converges to a constant value. Final failure mode of all the specimens was delamination. To use the maximum strength of the adhesive, it is important to design the joint to have strong resistance to delamination.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.514-522
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• 2000

In this thesis, a two-dimensional active phased array antenna without phase shifter is studied for two-dimensional beam scanning. A designed two-dimensional oscillator-type active array antenna, radiation elements and the oscillator circuits were combined with via-hole and coupled by slot on the opposite ground plane. The operating characteristics are analyzed and experimentally demonstrated , The two-dimensional $4\times4$ elements were designed for the proper coupling strengths and coupling phases by adjusting the width, length and offset position of slot-lines. The fabricated active phased array antenna shows the beam shift characteristics capable of scanning from $-17^{\circ}$ to $18^{\circ}$ with respect to broadside in one dimension, from $-5^{\circ}$ to $10^{\circ}$ in two dimension. The experimental results show that it is possible to use the oscillator-type active phased array antenna as a two-dimensional planar array antenna.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.232-233
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• 2013

본 발표에서 2012년 나노융합산업원천기술개발사업 꼭지로 연구개발을 수행하고 있는 "외부 충전없이 반영구적으로 사용이 가능한 10 mWh/cm2급 동위원소기반 전고상(全固相) 하이브리드 전지 원천기술 개발" 사업의 핵심내용을 간략히 소개하고자 한다. 본 과제의 핵심내용은 국내 유일의 원자로인 하나로의 중성자 빔라인을 이용하여 ${\beta}$-선을 방출하는 동위원소파우더를 생산하고, 방출되는 ${\beta}$-선을 효율적으로 흡수할 수 있는 PN-접합 전지구조에 노출시켜 2차적인 e-h 쌍을 생성시키고, 분리시키고 전극으로 포집하여 전력을 생산하는 한국형 동위원소전지 개발에 있다. 더하여 실시간으로 생성되는 미세한 출력전력을 증폭시켜 저장할 수 있는 고효율 전고상 이차전지와 전력제어회로를 포함하는 한국형 하이브리드전지관련 원천기술 개발관련 세부 사업내용을 소개함으로 관련분야 연구에 대한 국내관심을 환기시켜 관련기술개발을 촉진하고자 한다.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.118-125
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• 1999

A capacitance method to extract the metallurgical channel length of LDD MOSFET's, which is defined by the length between the metallurgical junction of substrate and source/drain under the gate, is presented. The gate capacitances of the finger type and plate type LDD MOSFET gate test patterns with same total gate area are measured. The gate bias of each pattern is changed, and the capacitances are measured with source, drain, and substrate bias grounded. The differences between two test pattern's capacitance data are plotted. The metallurgical channel length is extracted from the peak data at a maximum point using a simple formula. The numerical simulation using two-dimensional device simulator is performed to verify the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.337-337
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• 2010

갈륨-질화물 (GaN) 기반의 고 전자 이동도 트랜지스터 (High Electron Mobility Transistor, HEMT)는 GaN의 큰 밴드갭 (3.4~6.2 eV), 높은 항복전계 (Ec~3 MV/cm) 및 높은 전자 포화 속도 (saturation velocity $-107\;cm{\cdot}s-1$) 특성과 AlGaN/GaN 등과 같은 이종접합구조(Heterostructure )로부터 발생하는 높은 면밀도(Sheet Concentration)를 갖는 이차원 전자가스(Two-Dimensional Electron Gas, 2DEG) 채널로 인해 차세대 고출력/고전압 소자로서 각광받고 있다. 하지만 드레인 쪽의 게이트 에지부분에 집중되는 전계로 인한 애벌린치 할복현상(Breakdown)이 발생하는 문제점이 있다. 따라서 AlGaN/GaN HEMT의 항복전압 향상을 위한 방법으로 필드플레이트(Field-Plate) 구조가 많이 사용되고 있다. 본 논문에서는 2D 시뮬레이션을 통한 AlGaN/GaN HEMT의 필드플레이트 구조 최적화를 수행하였다. 이를 위해 ATLASTM 전산모사 프로그램을 이용하여 필드플레이트 길이, 절연체 증류 및 두께에 따른 전류 전압 특성 및 전계 분산효과에 대한 전산모사를 수행하여 그 결과를 비교, 분석 하였다, 이를 바탕으로 기존의 구조에 비해 약 300%이상 향상된 항복전압을 갖는 AlGaN/GaN HEMT의 최적화된 필드 플레이트 구조를 제안하였다.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.1 no.1
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• pp.31-43
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• 1989

Tidal asymmetry and the associated sediment dynamics in the Keum River Estuary has been investigated from a numerical tidal model. Modeling efforts were focussed on the simulation of large drying sandflat exposed at the mouth of the Estuary and dynamic combination of two-dimensional estuary model and one-dimensional river model. Despite strong frictional attenuation within the estuary, the M4 tides reach significant amplitude, resulting in strong tidal distortion. Model results show that the asymmetry over the area exhibit more intense flood flows transport than do less intense ebb flows of longer duration. This causes filling of the estuary as evidenced by large sandflats spread over the inner area. The spatial distribution of peak bottom stress computed from the tidal model suggest that present tidal sedimentation regime may be altered significantly, especially in the approach channel to outer Kunsan port and downstream part of the dike, due to the construction of cross-channel barrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.145-145
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 최근 마이크로파 또는 밀리미터파 등의 차세대 고주파용 전력소자로 각광받고 있다. AlGaN/GaN HEMT는 이종접합구조(heterostructure) 로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 높은 전자 이동도, 높은 항복전압 및 우수한 고출력 특성을 얻는 것이 가능하다. AlGaN/GaN HEMT에서 ohmic 전극 부분과 채널이 형성되는 부분과의 거리에 의한 저항의 성분을 줄이고 전자의 터널링의 확률을 증가시키기 위해서 recess된 구조가 많이 사용되고 있다. 그러나 이 구조에서는 recess된 소스와 드레인에 의해 AlGaN층의 제거로 AlGaN층의 두께에 영향을 미치며 그에 따라 채널에 생성되는 전자의 농도를 변화시키게 된다. 본 논문에서는 소스와 드레인의 Trench 구조를 제안하였다. ohmic 전극 부분과 채널간의 거리의 감소로 특성을 향상시켜서 recess 구조의 장점이 유지된다. 그리고 recess되는 소스와 드레인 영역에서 AlGaN층을 전체적으로 제거하는 것이 아니고 Trench 즉 일부분만 제거하면서 AlGaN층의 두께의 변화에 따른 문제점도 줄일 수 있다. 따라서 이러한 전극 부분을 Trench구조화 시킨 AlGaN/GaN HEMT의 DC특성을 $ATLAS^{TM}$를 이용하여 전산모사하고 최적화된 구조를 제안하였다.