• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.1-10
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• 2000

A rigorous modeling of ultra-low energy implantation is becoming increasingly more important as devices shrink to deep submicron dimensions. In this paper, we have developed an efficient three-dimensional Monte Carlo ion implantation model based on a modified Binary Collision Approximation(BCA). To this purpose, the modified electronic stopping model and the multi-body collision model have been taken into account in this simulator. The dopant and damage profiles show very good agreement with SIMS(Secondary Ion Mass Spectroscopy) data and RBS(Rutherford Backscattering Spectroscopy) data, respectively. Moreover, the ion distribution replica method has been implemented into the model to get a computational efficiency in a 3D simulation, and we have calculated the 3D Monte Carlo simulation into the topographically complex structure.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.559-563
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• 1997

Ta을 2MeV의 에너지로 가속시켜 1x$10^{17}$atoms/$\textrm{cm}^2$의 농도로 TiC(001)면에 이온 주입시킨 후 비행시간형 직충돌이온산란 분광법(time-of-flight impact-collision ion scattering spectroscopy; TOF-ICISS)을 사용하여 TiC(001)면의 Ta표면 편석을 연구하였다. TOF-ICISS는 표면 수층 깊이까지 원자구조를 측정할 수 있는 수법으로, 이온주입된 시편을 1$600^{\circ}C$에서 300sec동안 진공 가열하여 Ta 원자를 편석시킨 후 스펙트럼의 입사각도 의존성을 구함으로써 Ta원자의 편석 위치 및 농도구배를 조사하였다. [110]및 [100]방위에서 Ta과 Ti의 focusing peak가 서로 같은 입사각도에서 나타나며 편석된 Ta원자는 TiC의 Ti-site에 위치한다. Ta원자는 표면 최외층에만 편석되는 것이 아니라 수층에 걸쳐 Ti-site에 자리하고 있으며, Ta 원자의 농도는 표면 최외층에서 내부 층으로 깊어질수록 작아진다. 이온주입시 생성된 표면층의 탄소 격자 결함은 시편 가열시 벌크에 자리하는 탄소가 확산되어 없어진다.다.

• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.50-54
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• 1994

Spectrophotometric determination of some light lanthanide ions by flow injection method is described. Chromeazurol S forms water soluble complex with lanthanide ions in the presence of DTAB. The absorption maximum of the complexes are from 650 nm to 655 nm and the molar absorptivities were ca. $1.8{\times}10^5\;L mol^{-1}cm^{-1}$ on Tris buffer (pH 10.5). The calibration curves for Nd(III), Eu(III) and Sm(III) obtained by FIA are over the range of 0.1 to 0.6 ppm and the correlation coefficient were ca. 0.9993. The detection limits (S/N) were from 10 ppb for Nd(III) and Eu(III) to 20 ppb for Sm(III). The relative standard deviations was ${\pm}$.2% for 0.4 ppm sample. The samples throughput was ca. $50\;cm^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.81.1-81.1
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• 2015

최근 실리콘(Si) 원재료 가격의 하락으로 인하여, 태양광 시장에서 성능 좋은 저가의 태양광 모듈을 요구하고 있다. 즉, 와트(W)당 낮은 가격의 태양광 모듈을 선호하기 때문에 경쟁력을 갖추기 위하여서는 많은 출력을 낼 수 있는 고효율의 태양전지가 요구된다. 그래서 주목을 받고 있는 것이 N-type 실리콘 기판을 사용한 고효율 태양전지이다. 하지만, n-type Si 기판의 경우, pn 접합의 형성을 위하여서 기존의 열 확산(Thermal diffusion)법에 의한 에미터(Emitter) 형성방법은 양질의 pn접합을 형성하기에는 한계가 있다. 그로 인하여 주목하고 있는 기술이 반도체 공정에서 널리 사용되고 있는 이온 주입(Ion implantation)방식이다. 이 기술은 양질의 에미터 형성을 위하여, 동일한 양의 불순물(dopant) 주입, 정확한 접합 깊이 제어 등이 가능한 방법으로 고효율 태양전지 제작에 필수적이며, 가능한 기술이라고 할 수 있다. 본 발표에서는 어플라이드 머트리얼즈(Applied Materials)사가 보유하고 있는 고효율 태양전지 제작에 필수적인 이온주입방식의 기술과 양산화 가능한 관련장비 등을 소개 하고자 한다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.23-31
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• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.347-349
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• 2015

본 연구에서는 MOSFET 제작방법중 하나인 이온주입법에서 다양한 변수로 작용하는 도핑농도, 에너지주입, 바탕농도의 역할에 대해서 알아보고 채널길이가 감소함에 따른 단채널효과를 억제할 수 있는 최적점에 대하여 분석하였으며 Ion Implant 이차원 시뮬레이션값과 비교하였다. 결과적으로 농도와 에너지주입 그리고 채널길이에 따른 MOSFET의 최적화된 모델을 분석하였다.

• ETRI Journal
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• v.10 no.2
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• pp.63-69
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• 1988

SIMS(Secondary Ion Mass Spectrometry) 분석 데이터의 정량화 방법으로 이온주입에 의한 실험적 접근법과 LTE(Local Thermal Equilibrium) 모델을 사용한 준이론적 접근법 2가지가 주로 논의되고 있다. 본 고에서는 LTE 모델을 사용, SIMS data를 정량화하는 방법에 대하여 기술하였으며 아울러 BASIC language로 된 간단한 LTE 프로그램을 제시하였다.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.6-12
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• 1998

Fe-N(iron-nitrogen) crystal phases were prepared by nitrogen ion implantation into $\alpha$-Fe foil with Plasma Source Ion Implantation (PSII). Ion implantation time of sample is treated 15 minutes(FeN15) and 30 minutes (FeN30). The nitrogen depth profiles measured by Auger electron spectroscopy (AES) were determined to be about 12000 $\AA$ and 4000 $\AA$ for the samples of FeN15 and FeN30, respectively. The results of vibrating sample magnetometer (VSM) show that the saturation magnetization of the samples of as-implanted FeN15 and FeN30 was higher than that of pure $\alpha$-Fe foil, which may be owing to $\alpha$'-$Fe_8N$ or $\alpha$"-$Fe_{16}N_2$ phases. Accordingly this study shows the possibility of the partial formation of $\alpha$' or $\alpha$" phase in iron nitrogen produced by PSII method.II method.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.236-243
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• 2009

Proton Engineering Frontier Project (PEFP) has supplied the metal ions to users by using an installed metal ion implanter of 120 keV. At present a feasibility study is being performed for a cobalt ion implantation. For a cobalt ion extraction we studied to sustain the high temperature($648^{\circ}C$) for metal ions vaporization from a cobalt chloride powder by using an alumina crucible in the ion source. The temperature condition of the crucible was satisfied with the plasma generation at the arc current of 120V and EHC power of 250W. The extracted beam current of $Co^+$ ions was dependent on the arc current in the plasma. The maximum beam current was $100{\mu}A$ at 0.18A of the arc current. The 3 peak currents of the extracted ions such as $Co^+$, $CoCl^+$ and $Cl^+$ were obtained by adjusting a mass analyzing magnet and the $Co^+$ ion beam peak current fraction as around 70% in the sum of the peak currents. The fluence of the implanted cobalt ions at the $10{\mu}A$ of the beam current and 90 minutes of the implantation time into an aluminum sample as measured around $1.74{\times}10^{17}#/cm^2$ by a quantitative analysis method of RBS (Rutherford Backscattering Spectrometry).