• Journal of the Korean Chemical Society
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• v.39 no.9
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• pp.722-727
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• 1995

The electrochemical impedance spectra of polyaniline film prepared by cyclic voltammetry have been investigated in 0.1 M aqueous sulfuric acid solution. Charge transfer resistances were rather low at the oxidized states in agreement with the conductive behavior reported at these potentials. The corresponding exchange current densities were very high. Large values of capacitance associated with the polymer have been found which vary as a function of the electrode potentials. An equivalent electrical circuit has been deduced from the impedance data. It was therefore possible to obtain the parameters of the ionic mass transport within the film.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.57-62
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• 1996

To decrease the leakage current of $p^{+}n$ junction diode with hyperabrupt structure, the $3000{\AA}$ polysilicon was deposited on the top of conventional $p^{+}n$ diode and then annealed for 30 minutes at $900^{\circ}C$ in the $N_{2}$ ambient. It was estimated for both $p^{+}n$ diodes with and without polysilicon layer, and the impurity materials of n diffused layer to observe the influence of the polysilicon layer on leakage current characteristics. The leakage current was reduced to the order of 3 by using polysilicon layer. A large number of dislocation loops, which were believed to be generated by As-implanted diffused layer, were found to be removed by using polysilicon through TEM analysis.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.162-167
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• 1998

$SiO_xF_y$ optical thin films of lower refractive indices than glass substrates were fabricated by the CF$_4$ ion beam assisted deposition method and the optical, structural and chemical properties of them were investigated. Refractive index of $SiO_xF_y$ films was varied from 1.455 to 1.394 by decreasing the anode voltage or from 1.462 to 1.430 by increasing the current density of end-Hall ion source. FT-IR and XPS analyses show that as the F concentration increases, the Si-O bond at $1080m^{-1}$ shifts to higher wavenumber, the OH bonds are reduced drastically, and the fluorine atoms at the air-film interface are desorbed out by reacting with $H_2O$ in the atmosphere. $SiO_xF_y$ thin films are amorphous by the XRD analysis and have the compressive stress below 0.3 GPa. As an application of $SiO_xF_y$ thin films a two-layer antireflection coating was fabricated using a $SiO_xF_y$ film as a low refractive index layer and a Si film as an absorbing one.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.151-158
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• 2002

Fabricated were ultra-shallow $p^+-n$ junctions on n-type Si(100) substrates using decaborane $(B_{10}H_{14})$ ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 kV to 10 kV and at the dosages of $1\times10^{12}\textrm{cm}^2$.The implanted specimens were annealed at $800^{\circ}C$, $900^{\circ}C$ and $1000^{\circ}C$ for 10 s in $N_2$ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through $2MeV^4 He^{2+}$ channeling spectra, the implanted specimen at the acceleration voltage of 15 kV showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 kV and 10 kV. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 kV, 10 kV and 15 kV were 1.9 nm, 2.5 nm and 4.3 nm, respectively. After annealing at $800^{\circ}C$ for 10 s in $N_2$ atmosphere, most implantation-induced damages of the specimens implanted at the acceleration voltage of 10 kV were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 nm. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.161-167
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• 1993

ZnO 바리스터의 비선형 전도특성은 입자의 구조로부터 설명할 수 있다. 본 논문에서는 ZnO 바리스터의 입자구조에 트랩된 캐리어를 분석하기 위해서 TSC 측정 기법을 사용하였다. 측정 결과로 부터 네개의 TSC피크를 얻었다. 고온으로 부터 첫번째 두번째와 세번째 TSC피크의 기원은 각각 트랩, 도너 밀도 및 입계층의 트랩으로 나타나고 네번째 피크의 기원은 공핍층에 있는 도너 이온의 탈분극에 의해서 기인하는 것으로 사료된다. .alpha.$_{1}$피크의 활성화 에너지는 약 0.33-1.42eV였다. 또한 바리스터의 예비동작 영역에서의 전도특성은 .alpha.$_{1}$과 .alpha.$_{2}$피크의 값에 지배된다는 것을 확인하였다.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.673-681
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• 1995

Surface morphology and preferred orientation of 20${\mu}{\textrm}{m}$ gold electrodeposit formed from aqueous solution of the sodium gold sulfite were studied in terms of current density, plating temperature and Au concentration. As the current density changed from 13.0mA/$\textrm{cm}^2$ to 4.6mA/$\textrm{cm}^2$, the solution temperature from 3$0^{\circ}C$ to 6$0^{\circ}C$, pH from 12.0 to 9.0, agitation speed from 0 rpm to 3200rpm and Au concentration from 10g/1 to 14 g/1, local Au concentration near the cathodic surface increased. With increasing the Au concentration, the surface morphology chanced from porous structure to fine-grained structure. Furthermore, it was observed that the preferred orentation of the Au layer changed from (111) to (220) upon the same variation In the Au concentration. The surface morphology and the preferred orientation of the Au layer were found to be closely related to each other.

• Analytical Science and Technology
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• v.7 no.4
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• pp.527-540
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• 1994

The surface microstructure modification by $N^+ion$ implantation into 7050A1 alloy was investigated. Ion implantation method is to implant physically accelerated ions to the surface of a substrate. High doses of nitrogen($5{\times}10^{15}ions/cm^2$, $5{\times}10^{17}ions/cm^2$, $8{\times}10^{17}ions/cm^2$) were implanted into 7050A1 alloy using accelerating voltage of 100KeV and current density of $23.1{\mu}A/cm^2$. The implanted layers were characterized by EPMA, AES, XRD, and TEM. The experimental results were compared with computer simulation data. The results showed that AlN was formed from the surface to $4000{\AA}$ depth with Gaussian distribution and the damage region was also observed. This surface modification by $N^+ion$ implantation increased the microhardness of 7050A1 alloy surface.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.35.2-35.2
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• 2010

최근 $Cu(In,Ga)Se_2$(CIGS)와 같은 박막 태양전지에 대한 연구가 많은 관심을 끌고 있다. CIGS 태양전지의 광투과층으로 사용되고 있는 II-VI족 화합물 반도체인 CdS는 상온에서의 에너지 밴드 갭(band gap)이 2.42eV 정도로서, 가시광영역의 많은 빛을 투과시키고, 적절한 제작 조건하에서 비교적 낮은 비저항을 나타내기 때문에 널리 사용되고 있다. 하지만 CIGS 태양전지 연구는 주로 CIGS 흡수층 제조공정에 편중되어 있으며, CdS 버퍼층 공정조건에 대한 체계적인 연구가 부족하다고 판단된다. 습식공정인 Chemical Bath Deposition (CBD)에 의해 주로 제조되는 CdS는 단순한 제조공정에도 불구하고 CIGS 태양전지의 성능에 지대한 영향을 미치는 것으로 알려져 있다. 특히, CdS합성반응이 개시되기 전까지의 용액잔류시간 (dip time)은 CIGS내로의 Cd이온 농도를 결정하는 중요한 공정변수로 판단된다. CIGS 표면에 Cd이 도핑될 경우, CIGS는 n형 전도성을 갖는 얇은 층을 갖게 되어 전체적으로 n-CIGS/p-CIGS의 동종 접합을 형성하는 장점을 부여할 것으로 기대된다. 따라서 본 논문에서는 dip time을 주요변수로 하여 CIGS 태양전지의 성능에 미치는 영향을 주로 고찰하였다. Cd의 확산 정도는 secondary ion mass spectroscopy (SIMS)를 이용하여 정량화하였으며, 제조된 CIGS 태양전지의 전류-전압 특성과 상관성을 제시하고자 한다.

• Journal of the Korea institute for structural maintenance and inspection
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• v.17 no.5
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• pp.67-76
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• 2013

In this study, the inhibitive effect of electrochemical treatment subjected to fresh and hardened concrete and literature reviews in terms of the treatment were performed. In hardened concrete, chloride ions are mixed during casting to destroy the passivity of steel, and then the current was provided for 2 weeks with 250, 500 and $750mA/m^2$. After completion of electrochemical treatment, the extraction of chloride ions was quantified and repassivation of steel was observed. Simultaneously, the equated levels of current density for 2 weeks were applied to fresh concrete. Steel-concrete interface in concrete was observed by BSE image analysis and the concrete properties in terms of the diffusivity of chloride ions and the resistance of steel corrosion was measured. As the result, electrochemical treatment is very effectiveness to rehabilitate the passive film on the steel surface and 63-73% of chloride ions in concrete were extracted by the treatment. As the treatment was applied to fresh concrete, the resistance of steel corrosion was improved due to the densification of $Ca(OH)_2$ layers in the vicinity of steel. However, an increase in the current density resulted in an increase in surface chloride content of concrete.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.87-92
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• 2010

Desalination experiments were carried out with two types of cell configuration; a CDI cell constructed with carbon electrodes only and a membrane capacitive deionization (MCDI) cell having a cation-exchange membrane on the cathode surface. The salt removal rate and desalination efficiencies increased linearly with increasing the cell potential. Although the same carbon electrodes were used in the desalination experiments, the MCDI cell showed higher salt removal efficiency than that of the CDI cell. The amount of salt removal for the MCDI cell was enhanced by 33.1~135% compared to the CDI cell, depending on the applied cell potential in the range of 0.8~1.2 V. In addition, the current efficiency for the MCDI cell was about 80%, whereas the efficiency was under 40% for the CDI cell. The higher salt removal efficiency in the MCDI cell was attributed to the fact that ions were selectively transported between the electric double layer and the bulk solution in the MCDI cell configuration.