• Journal of the Korean Vacuum Society
• /
• v.15 no.6
• /
• pp.612-618
• /
• 2006

Surface modification of PTFE by ion irradiation was performed to improve its surface properties, In the case where argon was used to irradiate the PTFE films, an increase in the adhesion strength was observed when the ion fluence was over $1\times10^{15}\;ions/cm^2$, but the surface morphology dramatically changed to a needle-shaped one. However, when we used hydrogen ions under $O_2$ environmental gas, the adhesion strength increased at an ion fluence of $5\times10^{16}\;ions/cm^2$ and the surface morphology by the hydrogen irradiation was not needle-shaped. The surface morphology and adhesion strength of the hydrogen modified PTFE was influenced by the oxygen flow rate. It was confirmed by reflectance measurements that the surface properties of the hydrogen ion irradiated PTFE were superior to those of the argon ion irradiated PTFE.

• Polymer(Korea)
• /
• v.37 no.4
• /
• pp.431-436
• /
• 2013

Polycarbonate (PC) films have been irradiated with various kinds of ions according to energy and dose. Change of the optical transmittance and chemical characteristics were confirmed by UV-VIS and FTIR (ATR) spectroscopy respectively. These UV-A block in 400 nm was variable from 10 to 100% according to energy and doses. Surface electrical resistance of PC film irradiated by ion beam was $10^6-10^{13}{\Omega}/cm^2$, which reveal variation of conduction. Contact angle of film irradiated by ion beam was decreased than the pristine film. Polymer surface morphology was examined by means of atomic force microscopy (AFM). As expected, degradation of polymer film was higher after irradiation with heavier Xe ions but the roughness in the polymer surface morphology were more pronounced for Ar ions. This observed effect can be explained by stronger compaction of polymer surface layer in the case of Xe irradiation, connected with a reduction of free volume available.

• Journal of Radiation Protection and Research
• /
• v.16 no.2
• /
• pp.7-16
• /
• 1991

Measurement of Co-60 gamma rays has been made for establishment of exposure standard and analyze it's overall uncertainties. Exposure rate determined by the charge mode method using vibrating reed amplifier with cylinderical type cavity chamber. The values of a variety of physical constants and the correction factors are evaluated. The resulting exposure rate is 690.81 R/h at the distance of 1m from the source and the related uncertainties is ${\pm}0.8%$

• Journal of the Korean Vacuum Society
• /
• v.12 no.1
• /
• pp.55-63
• /
• 2003

A 150 kV gas cluster ion accelerator was constructed and the cluster sizes of $CO_2$ and $N_2O$ gases were measured using time-of-flight mast spectrometry. Through isolated cluster ion impact on a HOPG, hillock with 1 nm height and a few tenth m in diameter were found to be formed by an atomic force microscope. When monomer ion beams were irradiated on the hillocks existed on a ITO surface, they became sharper and the surface became rougher. But they changed into round-shaped ones by cluster ion irradiation and the surface became smooth after the irradiation of $5\times10^{-14}\textrm{cm}^2$ at 25 kV. As the cluster ion dose was varied, the change of surface morphology and roughness of Si was examined. At the lower dose, the density of hillocks and surface roughness were increased, called surface embossment process. And then after the critical dose at which the area of the formed hillocks equals to the unirradiated area, the sputtering from the hillocks was predominantly evolved, and dislocated atoms were diffused and filled among the valleys, called surface sputtering and smoothing process. At the higher ion dose, the surface consisting of loosely bounded atoms was effectively sputtered into the depth and etching phenomenon was happened, called surface etching process.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.81-81
• /
• 1999

고에너지 이온 주입에 의해 형성되는 결함의 거동을 DLTS(deep level transient spectroscopy)를 통해 조사하였다. 이온 주입에 이용된 기판들은 서로 다른 산소 농도를 가지고 있었으며, B 이온의 주입 농도는 각각 5X10E13 ~ 4X10E14으로 주입 에너지는 1.5MeV였다. 이온 주입에 의해 형성된 buried layer 내의 boron의 농도는 SIMS(secondary ion mass spectroscopy)를 이용하여 측정하였으며, 열처리에 따른 이차 결함의 생성은 TEM(transmission electron microscopy) 및 BMD(bulk micro defect)를 조사함으로써 알 수 있었다. 이온 주입에 의해 형성된 일차 결함의 제거 및 silicon 내부에서의 금속 gettering을 위하여 furnace 및 RTA (rapid thermal annealing)를 이용한 열처리를 행하였다. 이온주입 초기 상태 및 산소의 농도 또는 이온주입의 농도에 따른 결함을 살펴보기 위하여 DLTS를 이용하였으며, 또한 열처리에 따른 이러한 초기 결함들의 거동을 조사하여 TEM 및 BMD 결과와 비교, 분석하였다.

• Korean Journal of Materials Research
• /
• v.9 no.5
• /
• pp.446-451
• /
• 1999

Surface of Polymethylmethacrylate (PMMA) was modified by ion assisted reaction in which ion beam of Ar or$ O_2$is irradiated on polymer in reaction gas environment. Ion beam energy was changed from 600 to 1000eV, and ion doses were varied from $5\times10^{14} ions/cm^2 to 1\times10^{17} ions/cm^2$. Contact angle and surface energy of modified PMMA were measured by contact angle micrometer using distilled water and formamide. In the case of $Ar^+$ ion irradiation only, the contact angle reduced from $68^{\circ} to $35^{\circ}$ and the surface energy was changed from 46 dyne/cm to 60 dyne/cm. The contact angle significantly decreased to $14^{\circ}$and the surface energy increased to 72 dyne/cm when the surface of PMMA was modified by oxygen ion irradiation in oxygen gas environment. Improvement of wettability results from the formation of new hydrophilic group which is identified as C-O chain by XPS analysis. Recovery of wettability in dry air and maintenance of it in water condition were explained in view of the formation of hydrophilic group.

• Journal of Satellite, Information and Communications
• /
• v.9 no.1
• /
• pp.33-37
• /
• 2014

This paper introduces homogeneous liquid crystal (LC) orientations on chemically modulated polystyrene (PS) surfaces using various ion beam (IB) exposure time. Transparent PS was replaced with conventional polyimide material. As a non-contact process, IB bombardment process induced LC orientation in the direction parallel to the IB process. Through x-ray photoelectron spectroscopy, it was shown that the chemical compositional changes of the IB-irradiated PS surfaces were determined as a function of IB exposure time.Using this analysis, the optimal IB bombardment condition was determined at IB exposure time of up to 15 s. Moreover, thermal stability on IB-irradiated PS surfaces were carried out which showed that a relatively high IB exposure time induced a thermally stable LC alignment property.

• Clean Technology
• /
• v.4 no.2
• /
• pp.11-22
• /
• 1998

The photo-sensitized oxidation of benzene in water was investigated under various reaction conditions using persulfate, sulfate, nitrate, nitrite and chloride ions as sensitizers. Persulfate ion was proved to be the most effective sensitizer, while sulfate and nitrite could not play any sensitizing role on the benzene photooxidation. When exited together with other ions, the nitrite ion inhibited the photooxidation of benzene by quenching the produced hydroxyl radicals.

• Korean Journal of Materials Research
• /
• v.10 no.1
• /
• pp.77-82
• /
• 2000

A surface of polytetrafluoroethylene(PTFE) was modified with changing ion doses by 1 keV $Ar^+$ ion irradiation and Cu films having thickness $5000\;{\AA}$ were deposited on the modified PTFE. The SEM study showed that the surface texture of modified PTFE was in the form of cones whose height increased depending on ion doses. Through XPS spectra, it was found that the intensity of F ls peaks decreased with ion doses by preferential sputtering of F atoms and the C-C and / or C-F chains were formed by the crosslinking in the newly unstable chains. Cu films were deposited uniformly along the filaments formed on the modified PTFE. In x-ray diffraction (XRD) spectra of deposited Cu films on modified PTFE, a preferred orientation along (111) and (200) planes was found and the peak intensity of (111) plane increased as surface roughness of modified PTFE increased. The resistivity of Cu films was changed from $2.7{\mu}{\Omega}cm$ of unmodified PTFE to $4.3{\mu}{\Omega}cm$ of modified PTFE at ion dose of $1{\times}10^{16}/\textrm{cm}^2$ and the abrupt increase of resistivity in the modified PTFE at ion dose of $1{\times}10^{17}/\textrm{cm}^2$ was due to being cut off the film which resulted from the increased surface roughness.

• Journal of the Korean Magnetics Society
• /
• v.17 no.6
• /
• pp.221-225
• /
• 2007

The effects of $Ga^+$ ion irradiation on the magnetic properties of the $Co_{73}Pt_{27}-TiO_2$ perpendicular magnetic recording media were investigated. As $Ga^+$ ion dose increased from $1\times10^{15}ions/cm^2\;to\;30\times10^{15}ions/cm^2$, the perpendicular magnetic anisotropy was degraded and no longer observed above $20\times10^{15}ions/cm^2$ dose. The deterioration of the perpendicular magnetic anisotropy and ferromagnetic properties can be attributed to the concentration profile change due to Ga+ ion implantation. The magnetic islands of $70\times70nm^2\;and\;100\times100nm^2$ size were successfully fabricated with $Ga^+$ ion irradiation.