• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.1
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• pp.15-22
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• 2008

In this paper, we propose a numerical analysis on reversed current of distributed amplifier based on transmission line theory and proposed a theory to obtain optimum transmission line length to minimize the reversed currents by cancelling those components. The reversed current is analyzed as being simply absorbed into the terminal resistance in the conventional analysis. In the proposed analysis, however, they are designed to be cancelled by each other with opposite phase by the optimal length of the transmission lint Circuit simulation and implementation using pHEMT transistor were performed to validate the proposed theory with the cutoff frequency of 3.6 GHz. From the measurement, maximum gain of 14.5dB and minimum gain of 12.3dB were achieved In the operation band. Moreover, measured efficiency of the proposed distributed amplifier is 25.6% at 3 GHz, which is 7.6%, higher than the conventional distributed amplifier. Measured output power Is about 10.9dBm, achieving 1.7dB higher output power than the conventional one. Those improvement is thought to be based on the cancellation of refersed current.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.8-15
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• 2006

In this paper, the 94 GHz, low conversion loss, and high isolation single balanced mixer is designed and fabricated using GaAs-based metamorphic high electron mobility transistors (MHEMTs) with 70 nm gate length and the hybrid ring coupler with the micromachined transmission lines, dielectric-supported air-gapped microstrip lines (DAMLs). The 70 nm MHEMT devices exhibit DC characteristics with a drain current density of 607 mA/mm an extrinsic transconductance of 1015 mS/mm. The current gain cutoff frequency ($f_T$) and maximum oscillation frequency ($f_{max}$) are 320 GHz and 430 GHz, respectively. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of $3.57{\pm}0.22dB$ and the transmission loss of $3.80{\pm}0.08dB$ in the measured frequency range of 85 GHz to 105 GHz. This mixer shows that the conversion loss and isolation characteristics are $2.5dB{\sim}>2.8dB$ and under -30 dB, respectively, in the range of $93.65GHz{\sim}94.25GHz$. At the center frequency of 94 GHz, this mixer shows the minimum conversion loss of 2.5 dB at a LO power of 6 dBm To our knowledge, these results are the best performances demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.836-845
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• 2001

A Novel fully-differential bipolar current subtracter(FCS) and its application to current controlled current amplifier(CCCA) for high-accuracy current-mode signal processing were designed. To obtain full-differential current output, the FCS was symmetrically composed of two current follower with low current-input impedance. The CCCA to control output current by the bias current was consisted of the subtracter and a current gain amplifier(CGA) with single-ended current output.. The simulation result shows that the FCS has current-input impedance of 5 Ω and a good linearity. The CCCA has 3-dB cutoff frequency of 20 MHz for the range over bias current 100 $\mu$A to 20 mA. The power dissipation of the FCS and CCCA are 1.8 mW and 3 mW, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.828-835
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• 2001

Novel bipolar transresistance amplifier(TRA) and its offset-compensated TRA for high-performance current-mode signal processing are described. The TRA consist of two current follower for a current inputs, a current summer for the current-difference, a resistor for the current to voltage converter, and a voltage follower for the voltage output. The offset-compensated TRA adopts diode-connected npn and pnp transistor to reduce offset voltage in the TRA. The simulation results show that the TRA has impedance of 0.5 Ω at the input and the output terminal. The offset voltages at these terminals is 40 mV The offset-compensated TRA has the offset voltage of 1.1 mV and the impedance of 0.25 Ω. The 3-dB cutoff frequency is 40 MHz for the two TRA＇s when used as a current to voltage converter with unit-gain transresistance. The power dissipation is 11.25 mW.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.239-250
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• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.85-89
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• 2017

This paper proposes an antenna incorporating a bandstop filter to miniaturize the rectenna used for wireless power transmission with the emerging interest these days. To suppress the harmonics that can be re-radiated, this paper proposes a microstrip patch antenna that can suppress the harmonics while maintaining the size of the antenna by inserting a U-slot, which acts as a bandstop filter, on the ground plane of the antenna. As a result, S11 of the second harmonic(4.6GHz) was reduced from -5.61dB to -0.338dB and the efficiency was suppressed significantly from 29.76% to 1.5%. In addition, the maximum gain was reduced to -12dBi from 2.89dBi. On the other hand, at the fundamental frequency (2.45GHz), the S11 value was reduced from -18 dB to -15 dB, and the efficiency was reduced slightly from 68.2% to 60%. In the case of applying a microstrip antenna combined with the proposed bandstop filter to a rectenna, it is believed that the harmonics that degrade the performance of the rectenna can be removed effectively while reducing the large area occupied by harmonic suppression.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.6
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• pp.39-47
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• 1998

A fourth-order $\Sigma$-$\Delta$ modulator is designed and implemented in 0.6 $\mu\textrm{m}$ CMOS technology. The modulator is verified by introducing nonlinear factors such as DC gain and slew rate in system model that determines the transfer function in S-domain and in time-domain. Dynamic range is more than 110 dB and the peak SM is 102.6 dB at a clock rate of 2.8224 MHz for voiceband signal. The structure of a ∑-$\Delta$ modulator is a modified fourth-order ∑-$\Delta$ modulator using direct feedback loop method, which improves performance and consumes less power. The transmission zero for noise is located in the first-second integrator loop, which reduces entire size of capacitors, reduces the active area of the chip, improves the performance, and reduces power dissipation. The system is stable because the output variation with respect to unit time is small compared with that of the third integrator. It is easy to implement because the size of the capacitor in the first integrator, and the size of the third integrator is small because we use the noise reduction technique. This paper represents a new design method by modeling that conceptually decides transfer function in S-domain and in Z-domain, determines the cutoff frequency of signal, maximizes signal power in each integrator, and decides optimal transmission-zero frequency for noise. The active area of the prototype chip is 5.25$\textrm{mm}^2$, and it dissipates 10 mW of power from a 5V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.559-569
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• 2012

In this paper, the X($1{\times}2$, 10.525 GHz) and K($3{\times}6$, 24.15 GHz) bands patch array antenna having single feed line for radar detector applications is proposed. The left side of the proposed array antenna is X band array antenna and the right is K band array antenna. Two array antennas with two stubs located in the front of antennas are fed through one transmission line. If the array antennas which have the different resonance frequency are fed by one transmission line using general T-junction, it interferes each other and the array antenna lost its character. Therefore, to prevent these interferences, two stubs using open and short property of stub are designed. First of all, the performances of array antenna weren't changed when each array antennas were connected with the stub and in the end, it is found out that it was the same when the two array antennas were combined and feed through the one transmission line. The measured gain at X band is 6.47 dBi and measured gain at K band is 13.07 dBi. The experimental results agree well with the simulated ones.