• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.683-685
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• 2012

This paper have presented the analysis of the change for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET with two gates to be next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold chatacteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering is changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.2107-2108
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• 2011

전력계통의 절연설계에 있어 뇌과전압을 정확하게 측정하고 분석하는 것은 매우 중요하다 할 수 있다. 유도뢰 해석의 일환인 수치해석은 계산식을 기반으로 유도뢰 차폐효과에 대해 해석이 가능하나 이러한 수치적 해석은 선로정수, 뇌격전류의 크기 또는 접지저항 값이 변경되었을 경우 재계산을 하는데 다소 복잡한 과정을 거쳐야하기 때문에 이를 일괄적으로 처리할 수 있는 프로그램의 개발 필요성이 대두되었다. 이에 유도뢰 차폐효과 계산 프로그램을 MATLAB을 사용하여 개발하였다.

• Journal of Advanced Navigation Technology
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• v.20 no.4
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• pp.265-274
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• 2016

In this study, the system was composed of the booster chopper and the power converter, which is a pulse width modulation (PWM) voltage inverter using a hybrid power generation system solar cell energy and wind force, Furthermore, in order to compensate the PWM voltage type inverter was linked with the general commercial power source, and through a normal operation of energy storage system (ESS), the system operated the LED Taxi Light by Wavelength according to Meteorological Changes at the airport in an efficient manner. The performance of the system was compared with the solar cell characteristics specification. In addition, for phase synchronization with the PWM voltage type inverter, the grid voltage was detected so as to operate the grid voltage and inverter output in the same phase and to connect the surplus electric power with the system. Finally, by developing a control circuit at the same time from which an excellent dynamic characteristics can be obtained through applying to the airport runway taxi light, it was concluded that a variety of taxi light can be pursued.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.5
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• pp.532-537
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• 2004

FEF(Focused Electromagnetic Field) technique was newly developed that is based on the induction principle exciting electromagnetic field. The technique consists of an induction wire and a sensor for detecting electromagnetic field, and is applied in a non-contact mode. In this study, the technique was applied to the evaluation of EDM slits in some conductive materials - aluminum alloy, stainless steel and Inconel alloy. The voltage in the non-defect region is depended upon the measurement lift-off. The voltage signals on defects are measured with peak values, and the peak values changed with the depth of defects. The voltage distributions for all conductive materials are the same trend.

• Proceedings of the KIEE Conference
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• summer
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• pp.242-244
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• 2004

본 논문에서는 전력계통에서 에너지 함수를 이용하여 탭의 영향이 고려된 전압안정도 해석방법을 제시하였다. 전력계통의 전압안정도 해석은 부하단 변압기 탭의 특성과 밀접하게 연관되어 있으며 역학적 등가모델(EMM)을 이용하여 탭의 영향을 고려한 새로운 에너지함수를 유도하였다. 이 에너지 함수는 Lyapunov 함수의 조건을 만족시키며, 유도된 에너지함수로부터 안정평형점과 불안정평형점을 구하여 두 점에서의 에너지의 차이로서 전압붕괴를 예측할 수 있음을 1기 무한대 모선에 대하여 검증해 보았다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.100-105
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• 1994

Analytical expressions for the breakdown voltage and the optimum drift region length (L$_{dr}$) of SOI (Silicon-On-Insulator) pn diodes are derived in terms of the doping concentration and the thickness of the n- drift region and the buried oxide thickness. The optimum L$_{dr}$ is obtained from the condition that the breakdown voltage of the vertical electric field of n+n- junction equals to the of the lateral electric field of n+n-p+ junction. Analytical results agree reasonably with the numerical simulations using PISCESII.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.59-60
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• 2006

원통형 PN접합의 Baliga의 해석적인 항복전압에 대한 근사식을 유도하였다. 근사식은 접합길이, $r_j$와 공핍층 깊이, $W_{pp}$의 비 ($r_i/W_{pp}$)가 0.1보다 작은 경우 Baliga식과 잘 일치하였다. 농도에 대한 원통형 접합의 항복전압의 민감도를 유도하였으며, 근사식을 사용한 경우가 Baliga식의 경우보다 민감도식이 더 간단하기 때문에, 민감도를 고려한 소자 설계 시 활용될 수 있으리라 기대된다. 민감도 식을 이용하여 설계한 결과 항복전압의 편차가 10% 이내로 제어하기 위해서는 도핑농도가 $10^{15}cm^{-3}$이고 접합깊이가 $5{\mu}m$ 인 원통형 접합인 경우 농도 편차가 12.8%이내 이어야한다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.15 no.3
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• pp.18-24
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• 2001

This paper deals with a three-phase Pulse width Modulation(PWM) voltage souse inverter-induction motor drive with a single-phase PWM converter. The single-phase system has the pulsating instantaneous power with twice the frequency of the ac source. The power pulsation generates the dc voltage pulsation of the converter. In result, the waveforms of the inverter output current and voltage are distorted. The steady-stare operations of the system are analyzed by employing a state-spare method Such everything confirmed it's validity throughout simulation and experiment.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.116-117
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• 2014

본 논문에서는 3상 IPM을 사용하여 2상 유도전동기를 위한 2레그형 인버터를 설계하였다. 3상 IPM은 6개의 스위칭 소자를 내장하고 있어서 이중 4개는 2레그형 인버터로 사용하고, 나머지 2개는 역률제어 회로에 이용할 수 있다. 이렇게 하면 하드웨어의 추가를 최소화하면서 역률제어 기능을 갖는 2레그형 인버터를 구현할 수 있다. 2레그형 인버터에서는 반드시 직류링크에 2개의 커패시터를 직렬로 연결하는데, 입력 전원의 반주기 마다 각각의 커패시터에 충방전 동작이 수행된다. 이러한 동작으로 인해 2개의 커패시터에 전압 불균형이 발생할 수 있고 커패시터 용량이 서로 다를 경우에는 이 전압 리플이 더욱 커지게 되며, 이것은 전동기에 불평형 전류를 공급하게 되어 전동기의 토크리플을 발생시킨다. 본 논문에서는 직류링크의 전압 불균형 문제가 전동기에 미치는 영향을 분석하고, 이러한 전압 불균형을 보상하여 전동기의 토크리플을 제거하고 동작특성을 개선하는 방법을 제안하며, 컴퓨터 시뮬레이션을 통하여 이를 검증한다.