• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 학술대회 논문집
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• pp.9-12
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• 2004

Recently, the environmental problem has received considerable attention. so, many lamps have been developing for environmental requirement and energy efficiency. also, at glow discharge lamp researchers try to reduce energy spending that is power saving lamp. this kind requirement agree with strong points of electrodeless fluorescent lamp has received to now lighting sauce. At low pressure as mTorr I.C.P make high density plasma easily, is good to maintain discharge, has high ionization and does not have failing lighting and losing ability of electron radiation by oxidation and volatilization of electrodes, because this tape does not have electrodes This point of I.C.P can use at electrodeless fluorescent lamp in this study ICP display elements and Ar, Ne, Kr are researched for optical characteristic. each gas is looked into optical characteristic, also mixed gases is experiment for optical characteristic.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• 분석과학
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• 제10권5호
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• pp.307-314
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• 1997

지질시료 중의 U과 Th을 유도결합플라즈마 원자방출분광법으로 정량하기 위해 시료를 혼산으로 분해하고 TTA(thenoyltrifluoroacetone)와 TOA (tri-n-octylamine) 추출제를 이용하여 계통적으로 용매추출한 다음 HCl 용액으로 역추출하여 분리하였다. 표준암석 NIST SRM 278에 대한 분석결과는 NIST 및 다른 비파괴분석 결과와 비교하여 양호하였다. 알파선분광법으로 U과 Th의 자연방사성 동위원소를 측정하기 위해 추출분리한 각각을 음이온교환크로마토그래피로 정제하였다.

• 한국진공학회지
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• 제8권4B호
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• pp.565-571
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• 1999

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrode in dispaly devices were investigated. Plasma diagnostic and surface analysis tools were used to understand etch reaction mechanism. The etch rate of ITO was increased by the increase of reactive radicals such as H and $CH_3$ with the addition of moderate amount of $CH_4$ to Ar. However, the addition of excess amount of $CH_4$ decreased possibly due to the increased polymer formation on the ITO surface being etched. The increase of source power and bias boltage increased ITO etch rates but it decreased selectivities over under-layers $(SiO_2, Si_3N_4)$. The increase of working pressure up to 20mTorr also increased ITO etch rates, however the further increased of the pressure decreased ITO etch rates. From the analysis of XPS, a peak related to the polymer of hydrocarbon was observed on the etched ITO surface especially for high $CH_4$ conditions and it appears to affect ITO etch rates.

• 한국환경보건학회지
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• 제33권5호
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• pp.397-402
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• 2007

The present study was initiated to examine the measures of dietary intake of Fe, Cu and Zn. The food duplicate samples were collected in Busan and its neighboring area, from the 69 middle-aged women (healthy non-smoking, mostly house wives), who provided informed consent. The samples were wet ashed by being heated in the presence of mineral acids, and Fe, Cu, Zn in the wet-ashed samples were analyzed by inductively coupled plasma - atomic emission spectrometry(ICP-AES). Dietary intake of Fe, Cu and Zn were 10.4 mg/day in Fe, 1.2 mg/day in Cu, 7.4 mg/day as arithmetic mean. The values for dietary Fe and Zn were lower, and the values for dietary Cu were higher than the recommended daily intake from Korean Nutrition Society. Further studies of Korean foods are needed to clarify the representative values for daily dietary Fe, Cu and Zn intake in the Korean population.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1111-1114
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of $5{\sim}50W$ at 13.56MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of $-100V{\sim}+100V$. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30W. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• 대한기계학회논문집B
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• 제38권5호
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• pp.407-412
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• 2014

가스하이드레이트 원리를 이용한 신개념의 해수담수화 장치를 제안하였다. 본 연구의 연속식 장치는 하이드레이트를 제조하고, 듀얼실린더의 압축공정에 의해 해수로부터 순수의 하이드레이트 펠릿화가 가능하다. 해수 샘플로부터 용존된 각 이온들의 제거 효율이 유도결합플라즈마분광광도계(ICP-AES)와 이온크로마토그래피(IC)에 의해 분석되었다. 본 연구에서 제안된 방법과 장치를 이용한 해수담수화시 형성된 하이드레이트 결정과 고농도의 염농축액과의 분리에 어려움이 있지만, 이를 해결함으로 좀더 효율적인 해수담수화 공정 적용이 가능할 것으로 판단된다.