• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.59-59
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• 2010

ZnO는 II-VI 족 화합물 반도체로써 상온에서 큰 엑시톤 결합에너지 (~60 meV) 를 가지며 밴드갭이 3.37 eV인 직접 천이형 반도체로 잘 알려진 물질이다. 이러한 ZnO의 물리적 특성은 광학소자로 상용화된 GaN와 유사하기 때문에 LED나 LD등의 광 소자 재료로 주목 받고 있다. 또한 ZnO는 3족 원소 (In, Ga, Al)를 도핑 함으로써 전기적 특성 제어가 가능한 장점을 가지고 있다. 본 연구는 펄스레이저 증착법 (Pulsed Laser Deposition)을 이용하여 Si (111) 기판 위에 ZnO:In 박막을 성장 시켰으며, 도핑된 indium 양에 따른 ZnO 박막의 배향성 변화를 관찰 하였다. X-선 회절 분석법 (X-ray diffraction), 탐침형 원자현미경 (Atomic Force Microscope) 그리고 투과전자 현미경 (Transmission Electron Microscope)을 측정하였다. XRD 측정 결과 un-doped ZnO 박막은 (002) 방향으로 c-축 우선성장 하였다. 그러나 ZnO 박막내의 Indium 양이 증가 할수록 (002) 방향에서 (101), (102), (103) 등의 (101) 방향으로 성장이 변화 하였으며 5 at.% 이상에서는 (100) 방향의 성장이 관찰 되었다. TEM 측정 결과 un-doped ZnO 박막은 columnar 구조로 성장 되었으나, Indium 양이 증가할수록 column의 size가 감소하며, 5 at.% 이상에서 columnar 구조 성장이 거의 관찰되지 않는다. AFM 결과에서는 Indium 양이 증가 할수록 박막의 표면거칠기와 결정립 크기가 감소하였다.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.268-272
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• 2003

The microstructures of tungsten films were controlled by changing the sputtering pressure and substrate temperatures during D.C. sputter deposition. As the sputtering pressures were decreased, the sputtered models of the tungsten films were changed from the zone I model to zone T model. The tungsten film having zone T model microstructure shows a resistivity of 10${\times}$10$\^$-6/ $\Omega$-cm and (110) preferred orientation. FBAR with Bragg reflector composed of $SiO_2$and tungsten films having zone T model microstructure shows quality factor, Q$\_$s/, of 494 and K$\_$eff/$\^$2/ of 5.5% due to the high acoustic impedance and the smooth surface.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.801-804
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• 2006

[ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.70-74
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• 2009

Effect of the processing variables on the formation of $Pb(Sc_{1/2}Nb_{1/2})O_3$(hereafter PSN) thin layers prepared on Pt(111)/Ti/$SiO_2$/Si substrates using the sol-gel and the spin coating method has been studied. After each deposition, the coated films were heated at $370^{\circ}C$ for 5 min. Then they were finally sintered at temperature range of $600{\sim}700^{\circ}C$ by RTA(rapid thermal annealing). The final multilayered films showed a (111) preferred orientation. On a while, the layer-by-layer crystallization of multilayered amorphous thin films without the intermediate heating exhibited a (100) preferred orientation. In case of heat treatment in the tube furnace with the heating rate of $4^{\circ}C/min$, (100) and (111) oriented thin layers were formed simultaneously. The microstructure of the deposited films were dense and crack-free with thickness of 300nm, irrespective of the processing variables.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.475-482
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• 2010

Polycrystalline NiO thin films were deposited on glass substrate by RF magnetron sputtering using only Ar as a plasma sputter gas. based on the analysis of x-ray diffraction (XRD), NiO films had a polycrystalline cubic (NaCl type) structure. NiO thin films grown below and above $200^{\circ}C$ showed preferred orientation of (111) and (220) respectively. It showed colossal change in electrical resistivity as much a ${\sim}10^7$ order form an insulating state of $105\;{\Omega}cm$ below $200^{\circ}C$ to a conducting state of $10^{-2}{\sim}10^{-1}\;{\Omega}cm$ above $300^{\circ}C$ such a Mott metal-insulator transition (MIT) in polycrystalline.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.269-277
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• 1998

The crystallization method determines the material quality and consequent device performance. This paper investigates the crystallization of a-Si:H films on various substrate materials and analyzes the crystallization effect with and without using eutectic forming metals. From the examinations of the various substrate materials, a metal Mo was selected for the a-Si:H films growth and subsequent crystallization of it. For a sample without any eutectic metal layer, we observed grain size of $0.8{\mu}m$ after $1100^{\circ}C$ anneal treatment. To reduce crystallization temperature, we used some of the eutectic forming metals such as Au, Al and Ag. Poly-Si films with grain size over $10{\mu}m$ and (111) preferential plains were achieved using a premetal layer of Au at an anneal temperature of $700^{\circ}C$. The various crystallization effects of eutectic metal thickness and type were investigated for photovoltaic (PV) device applications.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.94-98
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• 2002

Sputtering conditions and various underlayer such as Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo and Hf were investigated for coercivity enhancement of 20 nm Ti/CoCrPt thin films in order to increase the coercivity of the films thinner than 20 nm. Among them, Ag and Mg were effective to increase the coercivity. Particularly 2 nm Ag was very effective to increase the coercivity and nucleation field as well as to reduce ${\alpha}$ value in CoCrPt thin film such that the coercivity of 2 nm Ag/18 nm Ti/10 nm CoCrPt film was 2200 Oe. However, it seemed that other coercivity enhancement mechanism operated in CoCrPt films because Ti (002) preferred texture was not developed with Ag underlayer contrary to a general expectation. And the coercivity and nucleation field were decreased when glass substrate with rougher surface was used.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.1-265.1
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• 2016

여러 application에 적용하기 위하여 p-type SnO 박막과 전극 간의 접촉 저항을 분석이 필요하였다. 이를 Transmission Line Method(TLM) 패턴 소자를 제작한 후 전기적 특성을 분석함으로써 알 수 있었다. $Si/SiO_2$ 기판에 Reactive Magnetron Sputtering법을 이용하여 c축 우선 배향된 SnO를 100nm 증착하고 photolithography 공정을 통해 전극을 패턴화하여 100nm 두께로 증착하였다. 전극 간 거리는 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, $1024{\mu}m$로 각각 2배씩 증가하는 패턴이고 폭 W는 $300{\mu}m$ 이다. p-type SnO 의 경우, work function이 4.8eV이기 때문에 전극과 ohmic contact이 되기 위해서는 4.8eV보다 높은 work function 값을 가지는 전극이 필요하였다. 이 조건과 맞는 후보로 Ni(5.15eV), ITO(5.3eV)를 설정한 후 소자를 제작하였다. 제작된 소자는 열처리 하지 않은 소자와 Rapid Thermal Annealing(RTA) 장비에서 $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$에서 각각 1분씩 열처리한 소자의 특성을 분석하였다. 열처리 하지 않은 소자의 경우 Ni 전극의 specific contact resistance는 $3.42E-2{\Omega}$의 값을 나타내었고, ITO의 경우 $3.62E-2{\Omega}$값을 나타내었다.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.145-151
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• 2006

The molecular assembly of p-iodo-phenyl octadecyl ether (I-POE), p-iodo-phenyl docosyl ether (I-PDE) and a binary mixture of these two molecules on graphite has been studied using a scanning tunneling microscope. Each molecular system self-assembles on the graphite surface to form a stable monolayer with a head-to-tail configuration. For the binary system, the I-POE and I-PDE molecules do not mix on the surface, preferring instead to form isolated monolayer domains. Here, the I-POE molecules are preferentially adsorbed on the graphite surface, due to the effects of alkyl chain length and the functional group on the monolayer structure.