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http://dx.doi.org/10.4191/KCERS.2003.40.3.268

Microstructure Control of Tungsten Film for Bragg Reflectors of Thin Film Bulk Acoustic Wave Resonators  

강성철 (한국과학기술연구원 박막재료연구센터, 한양대학교 재료공학과)
이시형 (한국과학기술연구원 박막재료연구센터)
박종완 (한양대학교 재료공학과)
이전국 (한국과학기술연구원 박막재료연구센터)
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Abstract
The microstructures of tungsten films were controlled by changing the sputtering pressure and substrate temperatures during D.C. sputter deposition. As the sputtering pressures were decreased, the sputtered models of the tungsten films were changed from the zone I model to zone T model. The tungsten film having zone T model microstructure shows a resistivity of 10${\times}$10$\^$-6/ $\Omega$-cm and (110) preferred orientation. FBAR with Bragg reflector composed of $SiO_2$and tungsten films having zone T model microstructure shows quality factor, Q$\_$s/, of 494 and K$\_$eff/$\^$2/ of 5.5% due to the high acoustic impedance and the smooth surface.
Keywords
Tungsten; Microstructure; FBAR; Resonator; Resistivity; D.C; magnetron sputtering;
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