• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.162-167
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• 2005

An optical directional coupler, which consists of quantum wells with nanothickness, is designed by using Modal Transmission Line Theory (MTLT). To demonstrate the validity and usefulness, the propagation characteristics and the coupling efficiencies are rigorously evaluated at nanoscale couplers, which consist of double quantum wells with different effective masses. The numerical result reveals that the coupling efficiency of nanoscale couplers is maximized at a coupling length 2052.3 nm, if the total electron energy is 83.9 meV. Furthermore, the coupler operates as a filter with narrower band as the barrier thickness increases.

• The Journal of Engineering Geology
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• v.26 no.3
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• pp.331-337
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• 2016

Radial collector wells (RCWs) have been managed by Korea Rural Community Corporation (KRC) since 1983, installing 98 wells for agriculture in rural area over the country. Among them, 20 wells were installed upstream of 5 subsurface dams and the remaining were installed regardless of the subsurface dam. Most of RCWs have been developed in 1980s and 1990s, and 83 wells have been passed more than 20 years after construction. The number of horizontal arms for RCWs varies from 9 to 28, with length and diameter being 10~30 m and 65 mm, respectively. The central caisson with an inner diameter of 3.5 m was commonly constructed to a depth of 10 m. The maximum pumping rates in RCWs, which are located at distances of 10 to 1,200 m from the river, are 2,000~10,000 m³/day. RCW has a fundamental problem that reduced pumping capacity and degraded well efficiency, due to the physical and chemical clogging. From the feasibility test for improving RCW performance, specific capacity increased to 67% after rehabilitation. TV logging for RCW horizontal arm shows that near the caisson is more severe clogging. From the results of this study, KRC has established the guidebook for monitoring and improving well efficiency through physical/chemical treatment, well logging, and hydraulic tests and managed RCWs periodically with its rehabilitation methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.175-175
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• 2010

이전 연구에서는 사파이어 기판 위에 이종에피성장 방법으로 성장한 높은 인듐 조성의 극박 InGaN/GaN 다층 양자우물 구조를 이용한 근 자외선 (near-UV) 영역의 광원에 대하여 보고하였다. 본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 법을 이용하여 성장된 free-standing GaN 기판 위에 유기금속 화학증착법 (MOCVD) 을 이용하여 GaN 동종에피박막과 높은 인듐 조성의 InGaN/GaN 다층 양자우물을 성장하였고 그 특성을 분석하였다. Free-standing GaN 기판은 표면 조도가 0.2 nm 인 평탄한 표면을 가지며 $10^7/cm^2$ 이하의 낮은 관통전위밀도를 가진다. Freestanding GaN 기판 위에 성장 온도와 V/III 비율을 조절하여 GaN 동종에피박막을 성장하였다. 또한 100 nm 두께의 동종 GaN 박막을 성장한 후에 활성층으로 이용될 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조를 성장하였다. Free-standing GaN 기판 위에 성장된 GaN 동종에피박막과 다층 양자우물구조의 표면 형상은 주사 탐침 현미경 (scanning probe microscopy, SPM) 을 이용하여 관찰하였고 photoluminescence (PL) 측정과 cathodoluminescence (CL) 측정을 통하여 광학적 특성을 확인하였다. 사파이어 기판 위에 성장된 2 um 의 GaN을 이용하여 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물의 결함밀도는 $2.5 \times 10^9/cm^2$ 이지만 동일한 다층 양자우물구조가 free-standing GaN 기판 위에 성장되었을 경우 결함 밀도는 $2.5\;{\times}\;10^8/cm^2$로 감소하였다. Free-standing GaN 기판의 관통전위 밀도가 $10^7/cm^2$ 이하로 낮기 때문에 free-standing GaN 기판에 성장된 높은 인듐 조성의 다층 양자우물구조의 결함밀도가 GaN/sapphire 에 성장된 다층 양자우물의 결함밀도 보다 감소했음을 알 수 있다. Free-standing GaN 기판에 성장된 다층 양자 우물은 성장온도에 따라 380 nm 에서 420 nm 영역의 발광을 보이며 PL 강도도 GaN/sapphire 에 성장한 다층 양자우물의 PL 강도 보다 높은 것을 확인할 수 있다. 이것은 free-standing GaN 기판에 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조의 낮은 결함밀도로 인하여 활성층의 발광 효율이 개선된 것임을 보여준다.

• Journal of Korea Water Resources Association
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• v.31 no.1
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• pp.27-34
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• 1998

Groundwater simulation model suing GIS and Arc/Info Gridfunctions were used to delineate wellhead protection areas. Groundwater simulation model was developed within Arcview GIS. The model. which integrates the data input and manipulation. Process simulation. and display of the results . was developed by considering time variations of the parameters. The model was applied to the EPA data. The hydraulic distributions from the EPA data and those calculated from groundwater simulation model agree well and zone of influence from EPA data and that calculated suing GRID functions seem to be consistent. The developed model may be an efficient tool to delineate WHPA because it integrates all the processes inside the GIS.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.37-43
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• 2009

Temperature and injection current dependence of electroluminescence(EL) spectral intensity of the $In_xGa_{1-x}N$/GaN multi-quantum wells(MQW) have been studied over a wide temperature range and as a function of injection current level. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents shows a drastic difference. This unique EL efficiency variation pattern with temperature and current can be explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields. Increase of the indium content in $In_xGa_{1-x}N$/GaN multiple quantum wells gives rise to a redshift of 80 meV and 22 meV for green and blue MQW, respectively. It can be explained by carrier localization by potential fluctuation of multiple quantum well and MQW structures also shows a keen difference owing to the different indium content in InGaN/GaN MQW.

• Applied Chemistry for Engineering
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• v.30 no.4
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• pp.499-503
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• 2019

Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.6 no.4
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• pp.452-458
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• 1994

The advantage of tide-well system with an intake pipe near the sea floor is that it can record not only tide but also harbour oscillation. tsunami. rapid change of tide height when a storm was causing rapid fluctuations in sea level. Consequently record of harbour oscillation may be extracted from tidal records by removing the predicted tide and then correcting for the attenuation caused by the tide-well system. The response of tide-well with intake pipe to seiche was examined by in situ measurements for Mukho tidal station. The well constant was also computed hydraulically on the basis of the structure of the tide gage system. It has been found that the response coefficient of the Mukho tidal station was 0.01. The tide records can be used for the determination of mean sea levels for surveying purposes. as the response of tide-well system can be estimated.

• The Journal of Engineering Geology
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• v.19 no.1
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• pp.71-79
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• 2009

Step-drawdown tests were conducted at four pumping Wells, two in porous media and two in fractured rocks, respectively. In general, P = 2.0 suggested by Jacob (1947) is applied to porous media and fractured rocks in terms of drawdowns of step-drawdown test. In an attempt to review problems of linear model (Jacob's graphic method) in interpreting the step-draw down test, the outcomes of well parameters (aquifer loss coefficient (B), well loss coefficient (C) and well loss exponent (P)) calculated from linear and nonlinear model (Labadie and Helweg's least-squares method) were compared and analyzed. The values of C and P calculated from linear and nonlinear models differed according to permeability of aquifer and the conditions of pumping well. The value C obtained from nonlinear models in porous media and fractured rocks is about $10^0{\sim}10^{-2}$ and $10^{-3}{\sim}10^{-6}$ times lower than in their linear models, respectively. The value P of porous media obtained from nonlinear model ranged from 2.123 to 2.775, while it ranged from 3.459 to 5.635 for fractured rocks. In case of nonlinear model, well loss highly depends on the value P. At this time, well efficiencies calculated from linear and nonlinear models were $1.56{\sim}14.89%$ for porous media and $8.73{\sim}24.71%$ for fractured rocks, showing a significant error according to chosen models. In nonlinear model, it was found that the regression analysis using the least squares method was very useful to interpret step-drawdown test in all aquifer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.148-148
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• 2011

일반적으로 LED 제작에 사용되는 c-plane GaN는 c축 방향으로 발생하는 분극의 영향을 받게 된다. 분극은 LED내 양자우물의 밴드를 기울게 하여 그 결과 전자와 홀의 재결합 확률을 감소시켜 낮은 내부양자효율을 가지게 된다. 이러한 문제를 해결하기 위한 여러 가지 방법들이 제시되었는데 그 중에서도 특히 a-plane 혹은 m-plane면과 같은 무분극 면을 사용하는 GaN LED가 주목받고 있다. 그 이유는 무분극 면은 분극이 발생하는 c축과 수직이기 때문에 분극의 영향을 받지 않아 높은 내부 양자효율을 가질수 있다. 본 연구에서는 MOCVD 장비를 사용하여 2인치 r-plane 사파이어 기판위에 3um두께의 a-plane GaN을 성장하였다. 그위에 2um정도로 Si을 도핑하여 n-type GaN 형성한후 단일 양자우물, 그리고 Mg을 도핑하여 p-type GaN을 성장하였다. 장파장대역의 a-plane LED의 특성을 알아보기 위해서 양자우물 형성시 In의 조성비를 높였다. 일반적인 포토리소그래피 공정과 Dry etching 공정을 사용하여 메사구조를 형성하였으며 Ti/Al/Pt/Au와 Ni/Au를 각각 n-type과 p-type의 전극 물질로 사용하였다. 제작된 LED의 특성을 파악하기 위해서 인가전류를 0부터 100mA까지 출력 스펙트럼을 측정하였으며 orange대역의 파장을 갖는 LED를 얻었다. 인가전류별 Peak 파장의 변화와 반측폭의 변화를 파악하여 장파장 대역의 a-plane LED의 특성을 확인하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.14-26
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• 2002

A new model for degenerate semiconductor quantum well devices was developed. In this model, the multi-subband Boltzmann transport equation was formulated by applying the Pauli exclusion principle and coupled to the Schrodinger and Poisson equations. For the solution of the resulted nonlinear system, the finite difference method and the Newton-Raphson method was used and carrier energy distribution function was obtained for each subband. The model was applied to a Si MOSFET inversion layer. The results of the simulation showed the changes of the distribution function from Boltzmann like to Fermi-Dirac like depending on the electron density in the quantum well, which presents the appropriateness of this modeling, the effectiveness of the solution method, and the importance of the Pauli -exclusion principle according to the reduced size of semiconductor devices.