• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.76.2-76.2
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• 2010

질산 용액을 이용한 처리를 통해서 실리콘 웨이퍼 위에 누설 전류가 thermal oxidation 방법과 비슷한 수준의 얇은 실리콘 산화막을 형성할 수 있다. 이러한 처리 방법은 thermal oxidation에 비해서 낮은 온도에서 공정이 가능하다는 장점을 가진다. 이 때 질산 용액으로 68 wt% $HNO_3$을 쓰는데, 이 용액에만 넣었을 때에는 실리콘 산화막이 어느 정도 두께 이상은 성장하지 않는 단점이 있다. 그렇기 때문에 실리콘 웨이퍼를 68 wt% $HNO_3$에 넣기 전에 seed layer 산화막을 형성 시킨다. 본 연구에서는 p-type 웨이퍼를 phosphorus로 도핑해서 에미터를 형성 시킨 후에 seed layer를 형성 시키고 68 wt% $HNO_3$를 이용해서 에미터 위의 실리콘 산화막을 성장 시켰다. 이 때 보다 더 효과적인 seed layer를 형성 시키는 용액을 찾아서 실험하였다. 40 wt% $HNO_3$, $H_2SO_4-H_2O_2$, HCl-$H_2O_2$ 용액에 웨이퍼를 10분 동안 담그는 것을 통해서 seed layer를 형성하고, 이를 $121^{\circ}C$인 68 wt% $HNO_3$에 넣어서 실리콘 산화막을 성장시켰다. 이렇게 형성된 실리콘 산화막의 특성은 엘립소미터, I-V 측정 장치, QSSPC를 통해서 알아보았다.

• Korean Chemical Engineering Research
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• v.47 no.5
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• pp.630-638
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• 2009

A computational fluid dynamics(CFD) model is developed and validated with on-site experiments for a urea-based SNCR(selective non-catalytic reduction) process to reduce the nitrogen oxides($NO_x$) in a municipal incinerator. The three-dimensional turbulent reacting flow CFD model having a seven global reaction mechanism under the condition of low CO concentration and 12% excess air and droplet evaporation is used for fluid dynamics simulation of the SNCR process installed in the incinerator. In this SNCR process, urea solution and atomizing air were injected into the secondary combustor, using one front nozzle and two side nozzles. The exit temperature($980^{\circ}C$) of simulation has the same value as in situ experiment one. The $NO_x$ reduction efficiencies of 57% and 59% are obtained from the experiment and CFD simulation, respectively at NSR=1.8(normalized stoichiometric ratio) for the equal flow rate ratio from the three nozzles. It is observed in the CFD simulations with varying the flowrate ratio of the three nozzles that the injection of a two times larger front nozzle flowrate than the side nozzle flowrate produces 8% higher $NO_x$ reduction efficiency than the injection of the equal ratio flowrate in each nozzle.

• Resources Recycling
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• v.7 no.3
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• pp.17-26
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• 1998

A study on the recovery of silver and nitric acid in the liquid waste resulted from the mediated electrochemical oxidation(MEO) process was conducted. The removal of silver in the concentrated nitric acid solutions was carried out by the electrodeposition. The removal efficiency more than 98% could be obtained in nitric acid concentrations less than 3 M with the current efficiency of nearly 100%. The experimonts on the evaporation for the recovery of nitric acid were performed as well. At the evaporation factor of 25., the degree of nitric acid recovery in 3.5 M nitric acid solution containing 0.5 to 1.0 mol% NaNO, was 80~90% resulting in 2.8~3.1 M nitric acid. The design factors and operating conditions of the distillation tower were analyzed by using MEH model derived by Maphtali-Sandholm with the throughput of 4 kg/hr for the enrichment of dilute nitric acid solution recovered by evaporation to reuse in the MEO process. The distillation column composed of eleven theoretical stages having the overall tray efficiency of 70% are needed to obtain 1.03 kg/h of 12M nitric acid and 2.97 kg/h of water with feed being introduced to the column at tray 6 from the bottom at the reflux ratio of 0.25, the reboiler with the heat load of 2.7 kW, and the condenser with the cooling load of 0.5 kW.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.181.1-181.1
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• 2015

용액 공정을 이용한 Resistive random access memory (ReRAM)은 간단한 공정 과정, 대면적화, 저렴한 가격 등의 장점으로 인해 큰 관심을 받고 있으며, HfOx, TiOx, AlOx 등의 산화물이 ReRAM 절연 막으로 주로 연구되고 있다. 더 나아가 최근에는 organic 물질을 메모리 소자로 사용한 연구가 보고되고 있다. 이는 경제적이며, wearable 또는 flexible system에 적용이 용이하다. 그럼에도 불구하고, organic 물질을 갖는 메모리 소자는 기존의 산화물 소자에 비해 열에 취약하며 전기적인 특성과 신뢰성이 우수하지 못하다는 단점을 가지고 있다. 이를 위한 방안으로 본 연구에서는 AlOx - polymethylmethacrylate (PMMA) blended thin film ReRAM을 제안하였다. 이는 organic물질의 전기적 특성을 개선시킬 뿐 아니라, inorganic 물질을 wearable 소자에 적용했을 때 발생하는 crack과 같은 기계적 물리적 결함을 해결할 수 있는 새로운 방법이다. 먼저, P-type Si 위에 습식산화를 통하여 SiO2 300 nm 성장시킨 기판을 사용하여 electron beam evaporation으로 10 nm의 Ti, 100 nm의 Pt 층을 차례로 증착하였다. 그리고 PMMA 용액과 AlOx 용액을 초음파를 이용하여 혼합한 뒤, 이 용액을 Pt 하부 전극 상에서 spin coating방법으로 1000 rpm 10초, 5000 rpm 30초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 150, 180, $210^{\circ}C$의 온도로 30 분 동안 열처리를 진행하였고, shadow mask를 이용하여 상부 전극인 Ti를 sputtering 방식으로 100 nm 증착하였다. 150, 180, $210^{\circ}C$로 각각 열처리한 AlOx - PMMA blended ReRAM의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과 제작된 소자 전부에서 2 V이하의 낮은 동작전압, 안정된 DC endurance (>150cycles), 102 이상의 높은 on/off ratio를 확인하였고, 그 중 $180^{\circ}C$에서 열처리한 ReRAM은 더 높은 on/off ratio를 갖는 것을 확인하였다. 결론적으로 baking 온도를 최적화하였으며 AlOx - PMMA blended film ReRAM의 우수한 메모리 특성을 확인하였다. AlOx-PMMA blended film ReRAM은 organic과 inorganic의 장점을 갖는 wearable 및 system용 비휘발성 메모리소자에 적용이 가능한 경제적인 기술로 판단된다.

• Membrane Journal
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• v.12 no.4
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• pp.240-246
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• 2002

New polysulfone scintillation proximity membranes were prepared by impregnating Cerium Activated Yttrium Silicate (CAYS), an inorganic fluor, in a membrane structure. The membranes were applied to detect the radionuclide contamination directly without the aid of a scintillation cocktail. The preparation of membranes was divided into two processes. A supporting polymer film was made of casting solutions consisting of polysulfone and solvent, their cast film being solidified by vacuum evaporation. CAYS-dispersed polymer solutions were cast over the first, solidified polymer films and coagulated either by evaporating solvent or by exchanging solvent in the solution with nonsolvent in a coagulation bath. The prepared membranes had two distinguished, but tight1y attached, double layers: one is the supporting layer of dense polymer film and the other the detecting layer consisting of CAYS and polymer. The radionuclide counting results revealed that the prepared membranes were efficient to monitor radioactivity contamination with reliable counting ability.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.3
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• pp.2131-2134
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• 2015

In this study, It has been demonstrated a new and realizable possibility of the ferroelectric random access memory devices by all solution processing method with paper substrates. Organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin films were formed on paper substrate with Al electrode for the bottom gate structure using spin-coating technique. Then, they were subjected to annealing process for crystallization. The fabricated PVDF-TrFE thin films were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). It was found from polarization versus electric field (P-E) measurement that a PVDF-TrFE thin film on paper substrate showed very good ferroelectric property. This result agree well with that of a PVDF-TrFE thin film fabricated on the rigid Si substrate. It anticipated that these results will lead to the emergence of printable electron devices on paper. Furthermore, it could be fabricated by a solution processing method for ferroelectric random access memory device, which is reliable and very inexpensive, has a high density, and can be also fabricated easily.

• Membrane Journal
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• v.25 no.1
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• pp.32-41
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• 2015

High performance polysulfone microfiltration membranes with a high were successfully prepared by vapor induced phase separation (VIPS) coupled with non-solvent induced phase separation (NIPS) process. Asymmetric Membranes were prepared with PSF/DMF/PVP/PEG/DMSO/water mixed solutions and water/IPA coagulant. PSF, DMF, PVP, PEG, DMSO, water was used as a membrane polymer, a solvent, a hydrophilic polymer additive, a polar protic liquid polymer, a polar aprotic nonsolvent, and a polar protic nonsolvent in the casting solution, respectively. The addition of polar aprotic nonsolvents, and polar protic nonsolvents is a convenient and effective method to control membrane structure. In order to control the morphology of polymeric membranes, the spontaneous emulsification induced by drawing water vapor into the exposed casting solution surface has been used. Control of the internal morphology of polymeric membranes by using mixed coagulation solution such as water and IPA is discussed in the present work. The pure water permeability, pore size distribution, surface hydrophilicity and membrane morphology were investigated. Due to the addition of DMSO to casting solution, the mean pore size increased almost $0.2{\mu}m$ and the water flux increased about 1000-1800 LMH.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.157-162
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• 2009

In this paper, the density, viscosity and solubility are measured to know the physical properties of dye. By changing the concentration of dye solution, the density change of the dye solution was very small and the viscosity of the dye solution was increased. Also, by changing the temperature of dye solution, the density change of the dye solution was increased but the viscosity of the dye solution was decreased. Solubility of dye conducts under the changing the salt and concentration of dye. In 20 wt% of dye and 15 wt% KCl, the amount of dye crystal is maximal. Also, batch salting-out experiments were performed with various conditions to know the optimal operating conditions of dye crystal. Under the various experiments, optimal operating condition was found based on amount of dye; added 15 wt% KCl, $25^{\circ}C$ temperature, 100 RPM, added at once.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Resources Recycling
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• v.31 no.1
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• pp.21-28
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• 2022

The smelting reduction of spent lithium-ion batteries results in metallic alloys of cobalt, nickel, and copper. To develop a process to separate the metallic alloys, leaching of the metallic mixtures of these three metals with H₂SO₄ solution containing 3% H₂O₂ dissolved all the cobalt and nickel, together with 9.6% of the copper. Cyanex 301 selectively extracted Cu(II) from the leaching solution, and copper ions were completely stripped with 30% aqua regia. Selective extraction of Co(II) from a Cu(II)-free raffinate was possible using the ionic liquid ALi-SCN. Three-stage cross-current stripping of the loaded ALi-SCN by a 15% NH₃ solution resulted in the complete stripping of Co(II). A process was proposed to separate the three metal ions from the sulfuric acid leaching solutions of metallic mixtures by employing solvent extraction.