• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.259-264
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• 1999

The relationship is derived for color CRT display system between the spectral radian existence emitted and digital inputs. The amount of spectral radiant existence depends on the characteristics of the video board, electric circuits, and CRT as well as digital inputs. Especially, the function of this relationship changes as the amplifier gain and offset voltage of electric circuits. In this study, we set the test display system on the optimum state which satisfies gun independence characteristics by using the contrast and the brightness controls of display. Temporal stability, special uniformity, and color distinction of CRT display system are evaluated at the optimum state. Also contrasts in dark room and illuminated room are compared.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.10A
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• pp.971-978
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• 2005

In this paper, we design and fabricate a VCO(Voltage Controlled Oscillator) for radar detector of X/K/Ka band using frequency multiplier. The existing VCO operated in radar detector have many Problems such as narrow bandwidth, slow frequency variable rate, unstable of production due to high frequency. So we design and fabricate a VCO improved such problems using frequency multiplier. As a result of measure, investigated frequency multiple VCO show its output power 3.64 dBm at multiplied operating frequency 11.27 GHz and have wide frequency tuning range of 660 MHz by controlled voltage 0V to 4.50 V applied diode. And also its phase noise is -104.0 dEc at 1 MHz offset frequency so we obtain suitable performance for commercial use.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.1A
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• pp.134-141
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• 2007

This paper presents a frequency synthesizer(FS) for 5.2GHz/2.4GHz dual band wireless applications which is designed in a standard $0.18{\mu}m$ CMOS1P6M process. The 2.4GHz frequency is obtained from the 5.2GHz output frequency of Voltage Controlled Oscillator (VCO) by using the Switched Capacitor (SC) and the divider-by-2. Power dissipations of the proposed FS and VCO are 25mW and 3.6mW, respectively. The tuning range of VCO is 700MHz and the locking time is $4{\mu}s$. The simulated phase noise of PLL is -101.36dBc/Hz at 200kHz offset frequency from 5.0GHz with SCA circuit on.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.

• Journal of IKEEE
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• v.15 no.1
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• pp.29-36
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• 2011

Dithering scheme has been widely used to improve the resolution of DCO(Digitally Controlled Oscillator) in conventional ADPLLs(All Digital Phase Locked Loop). In this paper a new resolution improvement scheme is proposed where a simple DAC is employed to overcome the problems of dithering scheme. A 2.4GHz LC-based DCO has been designed in a $0.13{\mu}m$ CMOS process with an enhanced frequency resolution for wireless local area network applications. It has a frequency tuning range of 900MHz and a resolution of 58.8Hz. The frequencies are controled by varactors in coarse, fine, and DAC bank. The DAC bank consists of an inversion mode NMOS varactor. The other varactor banks consist of PMOS varactors. Each varactor bank is controlled by 8bit digital signal. The designed DCO exhibits a phase noise of -123.8dBc/Hz at 1MHz frequency offset. The DCO core consumes 4.2mA from 1.2V supply.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.4
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• pp.527-536
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• 2014

In this paper, the 50kW aerogenerator which is applicable to the microgrid was designed and analyzed by using commercial simulation program Maxwell 2D. Particularly, the suggested PMSG to reduce the cogging torque introduced the offset and skew concept. The suggested optimal value of offset and skew was decided by 2mm and 60 degree of electric angle. The simulation results of the PMSG when load operation condition showed the average harmonic distortion 1.3%, voltage 322.41V, current 94.95A, and iron loss 9.73W, eddy current loss 73.68W, copper loss 3.52kW. The capacity of aerogenerator calculated 61.56kW, and the suggested design process can be applied to higher capacity generator.

• Journal of the Korean Society for Railway
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• v.20 no.4
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• pp.448-457
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• 2017

In this paper, for high speed railway propulsion systems, a single phase PWM Converter using discontinuous PWM (DPWM) was investigated. The conventional PWM Converter uses a low frequency modulation index of less than 10 to reduce switching losses due to high power characteristics, which results in low control frequency bandwidth and requires an additional compensation method. To solve these problems, the DPWM method, which is commonly used in three phase PWM Inverters, was adopted to a single phase PWM Converter. The proposed method was easily implemented using offset voltage techniques. Method can improve the control performance by doubling the frequency modulation index for the same switching loss, and can also bring the same dynamic characteristics among switches. Proposed DPWM method was verified by simulation of 100 kW PWM converter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.22-26
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• 2012

This paper introduces a 2.5-Gb/s optical receiver implemented in a standard 1P4M 0.18um CMOS technology for the applications of active optical HDMI cables. The optical receiver consists of a differential transimpedance amplifier(TIA), a five-stage differential limiting amplifier(LA), and an output buffer. The TIA exploits the inverter input configuration with a resistive feedback for low noise and power consumption. It is cascaded by an additional differential amplifier and a DC-balanced buffer to facilitate the following LA design. The LA consists of five gain cells, an output buffer, and an offset cancellation circuit. The proposed optical receiver demonstrates $91dB{\Omega}$ transimpedance gain, 1.55 GHz bandwidth even with the large photodiode capacitance of 320 fF, 16 pA/sqrt(Hz) average noise current spectral density within the bandwidth (corresponding to the optical sensitivity of -21.6 dBm for $10^{-12}$ BER), and 40 mW power dissipation from a single 1.8-V supply. Test chips occupy the area of $1.35{\times}2.46mm^2$ including pads. The optically measured eye-diagrams confirms wide and clear eye-openings for 2.5-Gb/s operations.