• Title/Summary/Keyword: 온도 보상

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LED driver IC design for BLU with current compensation and protection function (전류보상 및 보호 기능을 갖는 BLU용 LED Driver IC설계)

  • Lee, Seung-Woo;Lee, Jung-Gi;Kim, Sun-Yeob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.10
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    • pp.1-7
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    • 2020
  • In recent years, as LED display systems are actively spread, study on effective control methods for an LED driver for driving the systems has been in progress. The most representative among them is the uniform brightness control method for the LED driver channel. In this paper, we propose an LED driver IC for BLU with current compensation and system protection functions to minimize channel luminance deviation. It is designed for current accuracy within ±3% between channels and a channel current of 150 mA. In order to satisfy the design specifications, the channel amplifier offset was canceled out by a chopping operation using a channel-driving PWM signal. Also, a pre-charge function was implemented to minimize the fast operation speed and luminance deviation between channels. LED error (open, short), switch TR short detection, and operating temperature protection circuits were designed to protect the IC and BLU systems. The proposed IC was fabricated using a Magnachip 0.35-um CMOS process and verified using Cadence and Synopsys' Design Tool. The fabricated LED driver IC has current accuracy within ±1.5% between channels and 150-mA channel output characteristics. The error detection circuits were verified by a test board.

Design & Fabrication of an InGaP/GaAs HBT MMIC Power Amplifier for IMT-2000 Handsets (IMT-2000 단말기용 InGaP/GaAs HBT MMIC 전력증폭기 설계 및 제작)

  • 채규성;김성일;이경호;김창우
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.11A
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    • pp.902-911
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    • 2003
  • Using InGaP/GaAs HBT power cells with a 2.0${\times}$20$\mu\textrm{m}$$^2$ emitter area of a unit HBT, a two stage MMIC power amplifier has been developed for IMT-2000 handsets. An active-bias circuit has been used for temperature compensation and reduction in the idling current. Fitting on measured S-parameters of the HBT cells, circuit elements of HBT's nonlinear equivalent model have been extracted. The matching circuits have been designed basically with the extracted model. A two stage HBT MMIC power amplifier fabricated using ETRI's HBT process. The power amplifier produces an 1-㏈ compressed output power(P$\_$l-㏈/) of 28.4 ㏈m with 31% power added efficiency(PAE) and 23-㏈ power gain at 1.95 GHz in on-wafer measurement. Also, the power amplifier produces a 26 ㏈m output power, 28% PAE and a 22.3-㏈ power gain with a -40 ㏈c ACPR at a 3.84 ㎒ off-center frequency in COB measurement.quency in COB measurement.

Header-Based Power Gating Structure Considering NBTI Aging Effect (NBTI 노화 효과를 고려한 헤더 기반의 파워게이팅 구조)

  • Kim, Kyung-Ki
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.2
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    • pp.23-30
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    • 2012
  • This paper proposes a novel adaptive header-based power gating structure to compensate for the performance loss and the increased wake-up time of the power gating structures induced by the negative bias temperature instability (NBTI) effect. The proposed structure consists of variable width footers based on the two-pass power gating and a new NBTI sensing circuit for an adaptive control. The simulation results of the proposed structure are compared to those of power gating without the adaptive control and show that both the circuit-delay and wake-up time dependence of the power gating structure on the NBTI stress is minimized with only 3% and 4% increase, respectively while keeping small leakage power and rush-current. In this paper, a 45 nm CMOS technology and predictive NBTI model have been used to implement the proposed circuits.

Thermodynamic Properties of Ubiquitin Folding Intermediate (Ubiquitin 폴딩 intermediate의 열역학적 특성)

  • Park, Soon-Ho
    • Applied Biological Chemistry
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    • v.47 no.1
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    • pp.33-40
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    • 2004
  • Thermodynamic properties of ubiquitin transient folding intermediate were studied by measuring folding kinetics in varying temperatures and denaturant concentrations. Through quantitative kinetic modeling, the equilibrium constant, hence folding free energy, between unfolded state and intermediate state in several different temperatures were calculated. Using these values, the thermodynamic parameters were estimated. The heat capacity change $({\Delta}C_p)$ upon formation of folding intermediate from unfolded state were estimated to be around 80% of the overall folding reaction, indicating that ubiquitin folding intermediate is highly compact. At room temperature, the changes of enthalpy and entropy upon formation of the intermediate state were observed to be positive. The positive enthalpy change suggests that the breaking up of the highly ordered solvent structure surrounding hydrophobic side-chain upon formation of intermediate state. This positive enthalpy was compensated for by the positive entropy change of whole system so that formation of transient intermediate has negative free energy.

Design of GaAs FET Linearizer with Variable Source Inductance (가변 소스 인덕터를 갖는 GaAs FET 선형화기 설계)

  • An, Jeong-Sig;Lee, Ki-Hong;Kang, Jeong-Jin;Yoo, Jae-Moon;Lee, Jong-Arc
    • Journal of IKEEE
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    • v.3 no.2 s.5
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    • pp.221-225
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    • 1999
  • In this paper, a new type of predistortion linearizer has been studied. It employs a series feedback amplifier with a large source inductance as a predistortion linearizer, which provides positive amplitude and negative phase deviations for input Power and can compensate for AM-AM and AM-PM distortions of power amplifier. This predistortion lineariaer consists of only one CaAs FET, large source inductor, input output matching networks and bias circuits. Because of its simple circuit, the linear can be operated over a broad bandwidth and has good thermal stability The characteristics of this linearizer can be easily tuned using source inductor, its gate bias condition. In fabricated linearizer, the third-order intermodulation distortion(IMD) for main amplifier alone is 10.61dBc, and the $IM_3$ for main amplifier with predistorter is 21.91dBc. Therefore, the $IM_3$ characteristic results an improvement of approximately 11dB.

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Low-area Dual mode DC-DC Buck Converter with IC Protection Circuit (IC 보호회로를 갖는 저면적 Dual mode DC-DC Buck Converter)

  • Lee, Joo-Young
    • Journal of IKEEE
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    • v.18 no.4
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    • pp.586-592
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    • 2014
  • In this paper, high efficiency power management IC(PMIC) with DT-CMOS(Dynamic threshold voltage Complementary MOSFET) switching device is presented. PMIC is controlled PWM control method in order to have high power efficiency at high current level. The DT-CMOS switch with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuit consist of a saw-tooth generator, a band-gap reference(BGR) circuit, an error amplifier, comparator circuit, compensation circuit, and control block. The saw-tooth generator is made to have 1.2MHz oscillation frequency and full range of output swing from supply voltage(3.3V) to ground. The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on current mode PWM control circuits and low on-resistance switching device, achieved the high efficiency nearly 96% at 100mA output current. And Buck converter is designed along LDO in standby mode which fewer than 1mA for high efficiency. Also, this paper proposes two protection circuit in order to ensure the reliability.

A Study on the Phase Transition of Heat-Treated CdS Thin Films (열처리한 CdS 박막의 구조변환에 관한 연구)

  • Kim, Geun-Muk;Han, Eun-Ju
    • Korean Journal of Materials Research
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    • v.9 no.8
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    • pp.782-786
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    • 1999
  • CdS thin films prepared by vaccum evaperation have been studied the characteristcs of room temperature of scanning electron microscoe(SEM), X-ray diffraction(XRD), energy dispersive X-ray(EDX), and photoluminescence(PL)spectra. The cubic to hexagonal structure phase transitin has been determined to be $350^{\circ}C~450^{\circ}C$. The results of compensated donor levels of $O_2$and Si impurites at S-vacancy were identified CdO and $Cd_2SiO_4$defects. The edge emission peaks measured by PL of room temperature was donor level accoding the theses $O_2$and Si impurites were due to 2.43eV($350^{\circ}C$) and 2.42eV(55$0^{\circ}C$) peak energies respectively. The structure transition annealing temperature was measured $370^{\circ}C$ similar to Ariza-Calderons result, $374^{\circ}C$ by CBD films.

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Dynamic Temperature Compensation System Development for the Accelerometer with Modified Spline Interpolation (Curve Fitting) (변형 스플라인 보간법(곡선맞춤)을 통한 가속도 센서의 동적 온도 보상 시스템 개발)

  • Lee, Hoochang;Go, Jaedoo;Yoo, Kwangho;Kim, Wanil
    • Transactions of the Korean Society of Automotive Engineers
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    • v.22 no.3
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    • pp.114-122
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    • 2014
  • Sensor fusion is the one of the main research topics. It offers the highly reliable estimation of vehicle movement by processing and mixing several sensor outputs. But unfortunately, every sensor has drift which degrades the performance of sensor. It means a single degraded sensor output may affect whole sensor fusion system. Drift in most research is ideally assumed to be zero because it's usually a nonlinear model and has sample variation. Plus, it's very difficult for the acceleration to separate drift from the output signal since it contains many contributors such as vehicle acceleration, slope angle, pitch angle, surface condition and so on. In this paper, modified spline interpolation is introduced as a dynamic temperature compensation method covering sample variation. Using the last known output and the first initial output is suggested to build and update compensation factor. When the system has more compensation data, the system will have better performance of compensated output because of the regression compensation model. The performance of the dynamic temperature compensation system is evaluated by measuring offset drift between with and without the compensation.

Influences of ${Nb_2}{O_5}$ and MnO Addition on the Electrical Properties of ${Pb_{0.6}}{Sr_{0.4}}{TiO_3}$Semiconducting Ceramics (${Nb_2}{O_5}$와 MnO 첨가가 ${Pb_{0.6}}{Sr_{0.4}}{TiO_3}$ 반도체 세라믹의 전기적 특성에 미치는 영향)

  • Moon, Jung-Ho;Kim, Keon;Kim, Seong-Ho;Kim, Yoon-Ho
    • Journal of the Korean Ceramic Society
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    • v.37 no.10
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    • pp.968-974
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    • 2000
  • Nb$_2$O$_{5}$와 MnO 첨가에 따른 Pb$_{0.6}$Sr$_{0.4}$TiO$_3$반도체 세라믹의 미세구조와 전기적 특성은 유전특성, I(current)-V(voltage) 측정, 그리고 복소 임피던스 측정 등을 이용하여 고찰하였다. Nb 도핑량이 0.4 mol% 이하인 경우 Nb 도핑량에 따라 전도성과 입성장은 증가되었으나 그 이상의 도핑량에서는 Sr이나 Pb 공공의 생성으로 인하여 전도성이 감소되고 입성장도 억제되는 것을 관찰할 수 있었다. 0.4 mol% Nb-doped Pb$_{0.6}$Sr$_{0.4}$TiO$_3$에 0.01 mol% MnO를 첨가한 경우 비저항비($ ho$$_{max}$/$\rho$/min/)가 $10^2$에서 $10^4$으로 크게 향상되었다. 그리고 전이 온도 주변에서 여러 개의 변곡점을 지니는 비옴성 거동이 발견되었다. 이와 같은 현상은 입계에 존재하는 Mn 이온이 부분적으로 편석되어 표면 전하의 보상 효과에 영향을 미치는 것이라고 사료된다.

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Near-IR Spectroscopic Studies of the Hydrogen Bonding between Thioacetamide and N,N-Dimethylpropionamide in Carbon Tetrachloride (사염화탄소 중에서 Thioacetamide와 N,N-Dimethylpropionamide간의 수소 결합에 관한 분광학적 연구)

  • Byung-Chul Kim;Seok-Kyu Song;Keon Kim;Young-Sang Choi
    • Journal of the Korean Chemical Society
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    • v.29 no.6
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    • pp.599-607
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    • 1985
  • Near-ir spectra have been obtained for the $ν_3$+ Amide II combination thioacetamide(TA) band in CC$l_4$ and TA-DMP in CC$l_4$ in the range of 5 to 55${\circ}C$. Absorbance of the weak bands of the DMP and solvent has been compensated. The spectra are analyzed by the computer resolution into two Lorentzian-Gaussian product bands which have been identified with monomeric TA and 1 : 1 TA-DMP complex. Equilibrium constants and thermodynamic parameters for the hydrogen bonding between TA and DMP have been evaluated by the analysis of the concentration and temperature dependent spectra for the very dilute CC$l_4$ solutions. The $ΔH{\circ} and ΔS{\circ}$ of TA and DMT have been found to be -14.6 kJmo$l^{-1}$ and -16.2 Jmo$l^{-1}$ de$g^{-1}$.

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