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Design & Fabrication of an InGaP/GaAs HBT MMIC Power Amplifier for IMT-2000 Handsets  

채규성 (경희대학교 일반대학원 전파공학과)
김성일 (전자통신연구원 고속소자연구실)
이경호 (전자통신연구원 고속소자연구실)
김창우 (경희대학교 일반대학원 전파공학과)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.28, no.11A, 2003 , pp. 902-911 More about this Journal
Abstract
Using InGaP/GaAs HBT power cells with a 2.0${\times}$20$\mu\textrm{m}$$^2$ emitter area of a unit HBT, a two stage MMIC power amplifier has been developed for IMT-2000 handsets. An active-bias circuit has been used for temperature compensation and reduction in the idling current. Fitting on measured S-parameters of the HBT cells, circuit elements of HBT's nonlinear equivalent model have been extracted. The matching circuits have been designed basically with the extracted model. A two stage HBT MMIC power amplifier fabricated using ETRI's HBT process. The power amplifier produces an 1-㏈ compressed output power(P$\_$l-㏈/) of 28.4 ㏈m with 31% power added efficiency(PAE) and 23-㏈ power gain at 1.95 GHz in on-wafer measurement. Also, the power amplifier produces a 26 ㏈m output power, 28% PAE and a 22.3-㏈ power gain with a -40 ㏈c ACPR at a 3.84 ㎒ off-center frequency in COB measurement.quency in COB measurement.
Keywords
MMIC; IMT-2000; Power Amplifier; HBT;
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