• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.269-272
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• 2001

실리콘 마이크로머시닝 기술과 바이폴라 공정으로 집적화된 압력센서를 제작하고 동작특성 평가를 수행하였다. 센서부 보상파라미터를 추출하였고 트리밍 공정을 통하여 출력전압의 보상을 수행하였다. 센서 특성은 압저항 위치, 마스크 정렬 오차, 다이어프램 정밀두께제어 정도, 보호막의 과도식각 정도 등에 의하여 민감하게 좌우됨을 알 수 있었다. 웨이퍼별 샘플추출을 통하여 센서부 감도는 평균 0.653mV/kPa, 감도의 온도계수는 -2078.8ppm/℃, 옵셋 전압은 30.78mV, 옵셋전압의 온도계수는 32.11㎶/℃로 측정되었다. 추출된 샘플의 다이어프램 두께오차는 27±2.5㎛였다. 센서부 특성평가 결과를 통하여 신호처리회로의 옵셋 및 스팬보상, 온도보상을 위한 트리밍 공정을 수행한 결과 개발사양을 만족하는 결과를 얻을 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.6 s.312
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• pp.27-32
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• 2006

A temperature-compensated hygrometer has been developed using resistive humidity sensors. It consist of a sine wave generator, logarithm converters, rectifiers, and amplifiers. The hygrometer accomplishes the linearization and temperature compensation of sensor characteristics. The theory of operation is presented and experimental results are used to verify theoretical predictions. The experimental results show that the conversion sensitivity of the hygrometer is about 24.8 mV/%RH and the linearity error of the conversion characteristic is less than 17.2 % over a relative humidity range from 30 to 80 %RH. The results also show that the temperature coefficient of the output voltage is less than $10149ppm/^{\circ}C$ over a temperature range from 22 to $40^{\circ}C$.

• Fire Science and Engineering
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• v.21 no.4
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• pp.65-71
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• 2007

This paper is studied on a protective control system for electrical fire and electrical faults by using electrical and thermal characteristics of PTC thermistor. The PTC thermistor has characteristic or positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with $BaTiO_3$ Ceramics of positive temperature coefficient. Also PTC thermistor shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point. This paper is proposed on a protective control system used PTC thermistor which is protected from electrical fire due to electric short circuit faults or overload faults. Some experimental results of the proposed electric safety control apparatus are confirmed to the validity of the analytical results.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.51-58
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• 2008

This paper is studied on a prevention system for electrical fire and electrical faults by using electrical temperature characteristic of PTC thermistor. The PTC thermistor has characteristic of positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with $BaTiO_3$ ceramics of positive temperature coefficient. Also PTC shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point. This paper is proposed on a protective control system used with temperature sensor of PTC thermistor. The proposed prevention system will prevent electrical fires due to electric short circuit faults or overload faults. And the prevention system will solve the problems that circuit breakers to be commonly used at existing are happened frequently electrical fires and electrical disasters due to incapable operation, weak reliability and low speed response. Some experimental results of the proposed apparatus are confirmed to the validity of the analytical results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.17-20
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.128-131
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• 1997

기본 조성식 M $n_{1-x}$/F $e_{2+x}$/ $O_4$(이하 Mg계), M $n_{1-x}$/F $e_{2+x}$/ $O_4$(이하 Mg계)의 식에서 x를 0.0,0.025,0.1,0.2로 변화시키고, 하소온도 80$0^{\circ}C$, 소결은도를 l10$0^{\circ}C$~12$50^{\circ}C$로 $50^{\circ}C$간격으로 변화 시켰을 때와 Mn계와 Mg계를 1:1로 흔합하였을 때, F $e_2$ $O_3$의 과잉 양이 증가할수록 비저항은 감소하였고, 저항온도계수 $\alpha$는 밀도와 비례하는 관계를 나타내었으며, B정수는 4600(K)에서 10500(K)의 범위를 나타내었다. 본 조성의 실험으로써 Mn-Ni-Co계 서미스터의 대체가 가능함을 확인할 수 있었다.있었다.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.190-197
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• 1994

본 연구에서는 DC magnetron 스퍼터링법을 이용하여 고정밀, 고저항 저항체 박막으로 TaNx film을 제조하였을 때 형성될 수 있는 화합물 중 TaN0.1, TaN0.8과 TaN 박막의 Rs와 TCR특성을 평가하 고 film층의 우선방향성을 XRD를 이용하여 판명한 뒤 저항체의 Rs와 TCR에 미치는 영향을 조사하였 다. TaN0.1 박막이 35$\Omega$/$\square$의 면저항값과 안정된 TCR값을 나타내는 것을 알수 있었다. 두께50~200nm 의 TaN0.1과 Alumina 기판 사이에 정(+)의 TCR을 갖는 약 50nm의 Cr층을 증착하였을 때 Rs는 180$\Omega$/ $\square$ 과 TCR는 20ppm/$^{\circ}C$인 적층박막을 제조할 수 있었다. TaN0.1, TaN0.8 과 TaN 시편에서 화합물 형성 에 따른 Ta의 결합에너지를 ESCA를 이용하여 조사하였다. 이상의 연구결과로부터 TaN0.1 film이 TaNfilm 보다 고정밀, 고저항 박막 저항체 제조에 있어 우수한 전기저항 특성을 가지며 Cr 중간층 형성 으로 TCR이 $\pm$ppm/$^{\circ}C$정도로 안정된 고정밀 다층 저항체 박막을 형성할 수 있었다.

• Proceedings of the Korea Concrete Institute Conference
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• 2010.05a
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• pp.291-292
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• 2010

In this study, high-strength concrete mixtures were made with blast-furnace slag of 50% and 70% replacement level to evaluate material properties including compressive strength development, adiabatic temperature rise, autogenous shrinkage and chloride-ion migration coefficient. Test results showed that the use of high percentage blast-furnace slag in high-strength concrete can reduce heat of hydration and chloride-ion migration coefficient, result in control thermal cracking and improve durability performance especially under high corrosive environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.587-590
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• 2000

This paper presents the characteristics of metal thin-film pressure sensors. The micro pressure sensors consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si wafer an aluminium interconnection layer. The fabricated micro pressure sensors shows a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.16~1.21 mV/V.kgf/$\textrm{cm}^2$ in the temperature range of 25~l0$0^{\circ}C$ and the maximum non-linearity is 0.21 %FS.