• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.275-278
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• 2000

We were fabricated of NiCr thin film resistors(TFR) on A1$_2$O$_3$(99.5%) substrates by dc magnetic sputtering system. The characteristics of electrical resistance (Sheet resistance & Temperature-Coefficient of the resistance-value:TCR) by annealing condition and reactive gas on the resistors were studied.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.31-37
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• 1996

This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of $1kgf/cm^{2}$, ${\pm}0.012%FS/^{\circ}C$ of TCO, and ${\pm}0.08%FS/^{\circ}C$ of TCS in the temperature range of $-20{\sim}+125^{\circ}C$. It showed ${\pm}0.2%FS$ of hysteresis and ${\pm}1.5%FS$ of non-linearity. Shear-type polycrystalline silicon pressure sensor can eliminate temperature dependence of offset caused by resistors mismatch and be used in relatively wide temperature range, compared to the conventional full-bridge silicon pressure sensors.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Journal of the Korean Recycled Construction Resources Institute
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• v.7 no.1
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• pp.82-91
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• 2019

In this study, in order to evaluate Hydration Heat Characteristics of mass concrete using ternary blended cement for large underground structures, the analysis considering the temperature history and the thermal characteristics inside the actual structure was performed. The results of the analysis are compared with the measured values to verify the reliability of the analysis and to evaluate the crack resistance performance. As a result of the measured the actual structure temperature, The adiabatic temperature rise coefficients K and ${\alpha}$ of the slab were $35.1^{\circ}C$ and 0.72, respectively, and the wall was analyzed as $29.3^{\circ}C$ and 0.67. The analytical results and the correlation coefficients(r) were 0.95 and 0.98, respectively. As a result of evaluating the crack resistance of slab and wall, the minimum crack index of slab and wall was 1.22 and 1.20, respectively. These results were found to satisfy the site management standards.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.10
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• pp.1049-1056
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• 2014

Microelectronics components contain various materials with different coefficients of thermal expansion (CTE). Although a large amount of published data on the CTE of standard materials is available, it occasionally becomes necessary to measure this property for a specific actual material over a particular temperature range. A change in the temperature of a material causes a corresponding change in the output of the strain gage installed on the specimen because of not only the mechanical load but also the temperature change. In this paper, a detailed technique for CTE measurement based on these thermal characteristics of strain gages is proposed and its reliability is evaluated. A steel specimen, aluminum specimen, and copper specimen, whose CTE values are well known, were used in this evaluation. The proposed technique was successfully applied to the measurement of the CTE of a coreless package substrate composing of electronics packages.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.45-50
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• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_{2}O_{3}$ substrate by magnetron cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_{2}O_{3}$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : $4.4\;W/cm^{2}$, Co : $6.91\;W/cm^{2}$, working vacuum of 10 mTorr and annealing conditions of $800^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively and the TCR value of Pt-Co alloy thin films with thickness of $3000{\AA}$ were $3740ppm/^{\circ}C$ in the temperature range of $25{\sim}600^{\circ}C$. These results indicate that Pt-Co alloy thin films have potentiality for the RTD temperature sensors.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.2D
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• pp.285-292
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• 2006

The objective of this study is to introduce the development of the first Korean full-scale APT(Accelerated Pavement Tester) and to compare the performances of general dense grade asphalt mixture and modified asphalt mixtures as the first running of the tester. The tests evaluated the rutting resistance for dense grade mixture and three different modified asphalt mixture under three different temperature conditions (25-30, 40, $50^{\circ}C$). The results of the testing were compared with the laboratory test results. Results of the tests indicated that the all the modified asphalt sections showed higher rutting resistance than the dense grade section. Especially, the difference was more noticeable at higher temperature condition. Additionally, $G^*/sin{\delta}$ is found out to be an important factor for permanent deformation prediction whereas the resilient modulus was not.

• Korean Journal of Materials Research
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• v.6 no.2
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• pp.204-209
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• 1996

각종 전자부품에 이용되는 백금막의 밀착력과 응집화 현상에 대해 연구하였다. 온도저항계수(TCR)의 열화 없이 밀착력을 향상 시키기 위해서 AI, Si의 산화물을 adhesion promoting layer로 이용한 결과 매우 우수한 밀착력과 TCR을 보였다. 질소분위기 600-90$0^{\circ}C$의 온도범위에서 행한 열처리를 통해 응집화현상을 관찰한 결과 응집화는 기판거칠기에 따라 다른 양상을 보였다. Si3N4등의 기판거칠기가 작은 adhesion promoting layer를 이용한 시편의 경우 고온인 90$0^{\circ}C$에서 응집화 현상이 발생되었다. 표면거칠기가 큰 AI-Si 산화물을 adhesion promoting layer로 이용한 시편의 경우 비교적 저온인 $600^{\circ}C$에서 응집화 현상이 발생했으며 80$0^{\circ}C$이상의 열처리의 경우 중앙응집체와 응집체고갈지역이 형성되는 현상을 나타내었다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.133-136
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• 2005

스퍼터링 공정으로 Al이 $2\%$ 함유된 ZnO 박막을 PET에 증착하여 김서림 제거용 투명발열체를 제작하였다. 증착된 투명발열체는 $5\;{\times}\;10^{-3}{\Omega}\;cm$ 의 비저항과 $80\%$ 이상의 가시광 투과도를 나타내었고, 조도는 12.5nm로 양호하였다. 투명발열체의 비저항, 가시광 투과도, 그리고 조도는 각각 Hall 계수 측정장비, IR-VIS-UV spectrophotometer, 그리고 AFM을 이용하여 측정하였다. 증착된 투명발열체에 12V의 전압을 인가하였을 때, 표면의 온도는 평균적으로 1분에 약 $10^{\circ}C$ 증가하였다.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.9
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• pp.49-56
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• 1998

In this paper, a design of bias circuit in temperature independent voltage detect circuit is proposed. In order to realize this intention, we are used the differences in temperature coefficient of thermal voltage, resistor and transistor forward voltage(V$\sub$BE/) which is consisted in comparator. That is, It is realized by compensating the difference of temperature coefficient due to using components with each different temperature coefficient. As well, reference voltage of the circuit is accomplished by the difference of transistor forward voltage($\Delta$V$\sub$BE/) in comparator. In using reference voltage, resistor and V$\sub$BE/ Multiplier, we can design detect voltage of the circuit. In order to test operation of proposing circuit, we manufactured IC. Then, we measured operating characteristics and capability of the circuit by using HP4145B and temperature chamber. The result, we could obtain the good variation of temperature from -0.01 %/$^{\circ}C$ to -0.025 %/$^{\circ}C$.