• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.139-140
• /
• 2006

PZT박막은 비휘발성 재료로 유전율이 높고 항전력이 작으면서 잔류 분극랑이 크기 때문에 적합한 특성을 가지고 FeRAM에 매력적인 물질이다. CMP(chemical mechanical polishing)는 기존의 회생막의 전면 식각 공정과는 달리 특정 부위의 제거 속도를 조절함으로써 평탄화 하는 기술로 wafer 전면을 회전하는 탄성 패드 사이에 액상의 Slurry를 투입하여 연마하는 기술이다. 본 논문에서는 CMP 공정으로 제조한 PZT박막 캐패시터에서 CMP 후처리공정(세척)의 유무 및 종류에 따라 피로특성에 대하여 연구하였다, PZT 박막의 캐패시터의 피로 특성을 연구한 결과 CMP 후처리공정 SC-l용액을 사용하여 세정공정을 하였을때 가장 향상된 PZT 캐패시터의 피로특성이 나타났다.

• Proceedings of the KSME Conference
• /
• 2003.04a
• /
• pp.1283-1288
• /
• 2003

The friction heat generated by the CMP process hasinfluence on removal rate and WIWNU(Within Wafer Non-Uniformity). Therefore, the object of this study is to find the distribution of temperature on pad surface during CMP process. To do this, the authors analyse the kinematics of CMP equipment to verify the sources of friction heat and compare the analysis result with the experimental results. Through the analysis and experiment conducted in this paper, we can predict the distribution of polishing temperature across the pad surface. Furthermore the result could help to predict the process conditions which could enhance the polishing results, such as WIWNU and removal rate of thin film to achieve more efficient process.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.46-49
• /
• 2003

Microsystem technology (MST) which originated from semiconductor processes has been widely spreaded into tile other industry such as sensors, micro fluidics and displays. The MST, however. has been troubled in spreading with its high cost and material limitations. So, in this paper, new process for micromolding technology using silicone rubber mold was introduced. Silicone rubber mold, which was fabricated by vacuum casting. can be transferred a master pattern to a final product with the same shape but different materials. In order to verify the possibility of application of silicone rubber mold to the MST, its transferability was evaluated. and then it applied to the fabrications of polishing pad and PDP barrier ribs.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.27 no.8
• /
• pp.1380-1387
• /
• 2003

Microsystem technology (MST) which originated from semiconductor processes has been widely spreaded into the other industry such as sensors, micro fluidics and displays. The MST, however, has been troubled in spreading with its high cost and material limitations. So, in this paper, new process for micromolding technology using silicone rubber mold was introduced. Silicone rubber mold, which was fabricated by vacuum casting, can be transferred a master pattern to a final product with the same shape but different materials. In order to verify the possibility of application of silicone rubber mold to the MST, its transferability was evaluated, and then it applied to the fabrications of polishing pad and PDP barrier ribs.

• Proceedings of the KSME Conference
• /
• 2003.11a
• /
• pp.922-927
• /
• 2003

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (within wafer non-uniformity) for ILD (inter level dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful for understanding polishing mechanism and local physics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.70-71
• /
• 2005

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It is investigated the performance of ITO-CMP process using commercial silica slurry with the various conditioning temperatures by control of de-ionized water (DIW). Removal rate of ITO thin film was improved after CMP process after pad conditioning at the high temperature by improved exclusion of slurry residues in polishing pad..

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.7
• /
• pp.311-315
• /
• 2002

Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.10
• /
• pp.441-446
• /
• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.193-194
• /
• 2005

By the high-temperature pad conditioning process: The slurry residues in pores and grooves of the polishing pad were clearly removed. These clear pores and enlarged grooves made the slurry attack the oxide surface. The changed slurry properties by high-temperature pad conditioning process made the oxide surface hydro-carbonate to be removed easily.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.29 no.4 s.235
• /
• pp.435-440
• /
• 2005

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (Within Wafer Non-Uniformity) for ILD (Inter Level Dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful fur understanding polishing mechanism and local physics.