• Tribology and Lubricants
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• 제28권6호
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• pp.272-277
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• 2012

Finite element analysis was carried out using wafer-scale and particle-scale models to understand the mechanism of the fast removal rate(edge effect) at wafer edges in the chemical-mechanical polishing process. This is the first to report that a particle-scale model can explain the edge effect well in terms of stress distribution and magnitude. The results also revealed that the mechanism could not be fully understood by using the wafer-scale model, which has been used in many previous studies. The wafer-scale model neither gives the stress magnitude that is sufficient to remove material nor indicates the coincidence between the stress distribution and the removal rate along a wafer surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.120-124
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• 2004

본 연구는 Diluted Ceria 입자를 사용한 $SiO_2$(Oxide) CMP 현상에 대한 내용이다. Ceria Slurry의 경우 Silica Slurry와 비교하였을 때 Oxide Wafer 표면과 축합 화학반응을 일으키며 Chemistry Dominant한 CMP Mechanism을 따르고, Wafer Center Removal Rate(RR) Fast 의 특성을 가진다. Ceria Slurry의 문제점인 연마 불균일도를 해결하기 위해 Tribological System을 이용하였다. CMP Tribology는 Pad-Slurry 유막-Wafer의 System을 가지며 윤활막에 작용하는 마찰계수(COF)가 주요 인자이다. Tribology에 적용되는 Stribeck Curve를 통해 Slurry 윤활막의 두께(h) 정도를 예상할 수 있으며, 이 윤활막의 두께를 조절함으로써 Uniformity 향상이 가능하다. 이 Ceria Slurry CMP의 연마 불균일도를 향상시킬 수 있는 방법으로 pH 조절 및 점도 증가가 있다. Ceria 입자 CMP는 분산액의 pH 변화에 강한 작용을 받게 되며 PH5 근방에서 최적화된 Uniformity가 가능하다. 점도를 증가시키는 경우 유막 h가 증가하게 되어 Ceria Slurry의 유동이 균일 분포 상태에 가까워지며 Wafer Uniformity 향상이 가능하다.

• 한국정밀공학회지
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• 제32권7호
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• pp.627-631
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• 2015

Conventional etching technology is in the face of problems such as dishing, erosion resulting from non-uniform removal of film. Advanced printed circuit board (PCB) requires accurate wire formation with the aid of planarization by chemical mechanical polishing (CMP). Linear roll CMP is a line contact continuous process which removes the film by pressurization and rotation while slurry is supplied to polishing pad attached to the roll. This paper focuses on the design of floating nozzle on the linear roll CMP equipment which makes the slurry supply uniformly on the roll pad. Experimental results show that removal rate using the floating nozzle increases 3 times higher than that without it and non-uniformity is less than 15%.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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• pp.215-215
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• 2004

본 연구는 차세대 FPD의 소재로서 각광받고 있는 유기EL 의 제조공정을 위한 연구이다. 유기 EL 의 모재로서 이용되고 있는 ITO 코팅 유리는 그 표면의 정밀도에 따라서 제품의 불량률이 변화되게 됨으로 제조공정에 있어서는 매우 중요한 역할을 한다. 하지만, ITO 코팅유리의 표면 정밀도를 얻기 위하여 필수적인 연마공정 내에서 연마입자와 ITO 코팅유리의 상호작용에 의하여 연마가 이루어질 뿐 아니라, 불순물의 유입이나 기타 공정조건에 의하여 유리 표면 결함이 발생 및 불균일 연마가 수행되는 것은 피할수 없는 상황이다.(중략)

• 대한기계학회논문집A
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• 제29권3호
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• pp.432-438
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• 2005

CMP characteristics such as material removal rate and edge effect were measured and investigated in accordance with pad grooving effect, groove width, depth and pitch. GSQ (Groove Stiffness Quotient) and GFQ (Groove Flow Quotient) were proposed to estimate pad grooving characteristics. GSQ is defined as groove depth(D) divided by pad thickness(T) and GFQ is defined as groove width(W) divided by groove pitch(P). As GFQ value increased, material removal rate increased some point but gradually saturated. It seems that material removal rate is not affected by each parameter respectively but by interaction of these parameters such as groove dimensions. In addition, an increase in GFQ and GSQ causes edge effect to be improved. Because, pad stiffness decreases as GSQ and GFQ increase. In conclusion, groove influences relative pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. The change of groove dimensions has influence on pad stiffness and slurry flow, so that polishing results such as removal rate and edge effect become changed.

• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2004년도 추계학술대회 논문집
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• pp.48-51
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• 2004

Chemical Mechanical Polishing(CMP) is popularly used in production of semiconductor because of large area polishing ability probability of improvement for more integrated circuit. However, present CMP processing causes some non-uniformity errors which can be critical for highly integrated circuit. Previous studies predict that flow-field of slurry during CMP can create non-uniformity, but no quantitative measurement has conducted. In this study, using PIV, slurry velocity flow-field during CMP is measured by changing the ratio of RPM of pad and carrier with tuned PIV system adequate for small room in CMP machine and Cabot's non-groove pad Epad-A100. The result show that velocity of slurry is majorly determined by pad-rpm and the ratio of between carrier and pad rpm make some changes in streamlines.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.358-363
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• 2010

The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.

• 대한소아치과학회지
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• 제43권3호
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• pp.275-283
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• 2016

본 연구는 복합레진의 연마방법에 따른 표면특성을 평가하기 위해, microhybrid 레진(Filtek$^{TM}$ Z250)과 nanofill 레진(Filtek$^{TM}$ Z350)을 연마 전, abrasive disk(Sof-lex) 연마 후, polishing brush(Occlubrush) 연마 후로 나누어 분석하였다. 그 결과 레진 표면조도는 연마 후 증가하였는데, 미세조도는 연마방법에 따른 차이가 없었으나 거시조도는 Occlubrush를 이용한 경우 현저하게 커졌다(p < 0.05). Sof-lex 연마의 경우 레진의 filler까지 연마되어 표면이 보다 균일한 형상을 보였으나 Occlubrush 연마시편은 기질층이 뜯겨져 나간 불균일한 형상을 보였다. 두 연마방법 간의 미세경도 유의차는 없었으며(p > 0.05), 연마 후 경도 값이 약 25% 상승하였다. 결론적으로, 복합레진의 표면경도 향상을 위하여 적합한 연마가 필요하며, Sof-lex를 이용한 연마가 더 우수한 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.555-556
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• 2007

Through the single head kinematics, sliding distance is a movement of a pad within wafer. The sliding distance is very important to frictional heat, material removal, and so on. A Temperature distribution is similar to sliding distance. But is not same. Because of complex process factor in CMP. A platen velocity is a dominant factor in a temperature and material removal. WIWNU is low in head faster condition.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 춘계학술대회 논문집
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• pp.968-971
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• 2002

Two decisive mechanisms of the electrorhological polishing for a small part(for example, a aspherical surface in a micro lens) are explained. Firstly, non-uniform electric field generated in the polishing structure increases a shear stress of ER fluids which is maximized dramatically near the tool, therefore, substrate adjacent to the tool can be removed effectively by mixed abrasives in the ER fluid. Secondly, abrasives in a non-uniform electric field are governed by the dielectrophoretic phenomena. Abrasives move toward the tool because the field gradient is highest near the tool and then abrasives are actively holded in that area. This phenomena is observed and evaluated by the optical measurement.