• Transactions of the Korean hydrogen and new energy society
• /
• v.13 no.3
• /
• pp.169-180
• /
• 2002

Rayleigh scattering and laser induced predissociative fluorescence are used to obtain two-dimensional images of temperature and species concentration in a laminar non-premixed flame of a diluted hydrogen jet. Rayleigh scattering cross-sections are experimentally obtained at 248nm. Planar images of OH and $O_2$ with tunable KrF excimer laser which has a) $0.5cm^{-1}$ linewidth, b) 0.5nm tuning range, c) 150mJ pulse energy, and d) 20ns pulse width are obtained to determine spatial distributions of OH and $O_2$. The technique is based on planar laser induced predissociative fluorescence (PLIPF) in which collisional quenching is almost avoided because of the fast predissociation. Dispersed LIPF spectra of OH and $O_2$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and $O_2$. OH and $O_2$ are excited on the $P_2$(8) and $Q_1$(11) line of the $A^2{\Sigma}^{+}({\nu}^{'}=3)-X^{2}{\Pi}({\nu}^{''}=o)$ band and R(17) line of the Schumann-Runge band $B^{3}{\Sigma}_{u}{^-}(\nu^{'}=0)-X^{3}{\Sigma}_{g}{^-}({\nu}^{''}=6)$, respectively. Fluorescence spectra of OH and Hot $O_2$ are captured and two-dimensional images of the hydrogen flame field are successfully visualized.

• Korean Journal of Optics and Photonics
• /
• v.10 no.2
• /
• pp.152-156
• /
• 1999

We have developed the pulse-width variable Quenched Dye Laser (QDL). QDL consisted of the dye cell of 5 mm length containing a $2.5{\times}10^{-3}$[mol/l] solution of Rhodamine 6G and the cylindrical lens focal length of 150 mm and quenching mirror. QDL system was pumped by s XeCl excimer laser with 150 mJ pulse energy in a 20 ns pulse at 1 Hz repetition rate. Pulse-width of QDL was measured by a noncollinear intensity autocorrelator. The focused thckness was measured by changing the position of the focusing cylindrical lens. Pulse-width of QDL as a function of the focused thickness (273.0${\mu}{\textrm}{m}$~845.0${\mu}{\textrm}{m}$) varied continuously from 86 ps to 201 ps.

• Korean Journal of Optics and Photonics
• /
• v.6 no.3
• /
• pp.201-213
• /
• 1995

By the use of computer simulation including collisional mixing kinetic processes of the B- and C-state in the upper laser level the output characteristics of electron-beam pumped XeF$(C\rightarrowA$ excimer laser are analyzed. We compared the results between experiments and simulations for the $XeF^*(C)$ formation that correlated the number of densities of the $XeF^*(B)$. We obtained good agreement$(28.5 mJ\pm5%)$ with comparisons between experiment and simulation and confirmed the optimal gas mixing ratio of $Xe/F_2/Ar=5.26/0.49/94.28%$ at atmospheric pressure laser medium under the condition of 70 ns [FWHM] electron-beam (800 kV, 21 kA). Also through the simulation we have investigated that the $XeF^*(C)$ formation channel, the $XeF^*(C)$ relaxation channel, and the absorption channel of bluegreen wavelength region as a function of F2 halogen donor and Xe partial pressure. ssure.

• Journal of the Korean Magnetics Society
• /
• v.4 no.3
• /
• pp.214-218
• /
• 1994

$Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

• Journal of the Korean Magnetics Society
• /
• v.15 no.1
• /
• pp.21-24
• /
• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Applied Chemistry for Engineering
• /
• v.17 no.2
• /
• pp.158-162
• /
• 2006

Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a $CF_{4}$-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1225_1226
• /
• 2009

유리 기판 상에 이중 게이트 절연막을 가지는 우수한 특성의 P형 엑시머 레이저 어닐링 (ELA) 다결정 실리콘 박막 트랜지스터를 제작하였다. 그리고 P형 짧은 채널 ELA 다결정 실리콘 박막 트랜지스터의 오프 상태 스트레스 하에서의 전기적 특성을 분석하였다. 스트레스하에서 긴 채널에서의 문턱 전압은 양의 방향으로 거의 이동하지 않는 (${\Delta}V_{TH}$ = 0.116V) 반면, 짧은 채널 박막 트랜지스터의 문턱 전압은 양의 방향으로 상당히 이동 (${\Delta}V_{TH}$ = 2.718V)하는 것을 확인할 수 있었다. 이런 짧은 채널 박막 트랜지스터에서 문턱 전압의 양의 이동은 다결정 실리콘 막과 게이트 산화막 사이의 계면에서의 전자 트랩핑 때문이다. 또한, 박막 트랜지스터의 누설 전류는 오프 상태 스트레스 하에서의 채널 영역의 홀 전하로 인하여 온 전류 수준을 감소시키지 않고 억제될 수 있었다. C-V 측정 결과는 계면의 전자 트랩핑이 드레인 접합 영역부근에서 발생한다는 것을 나타낸다.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.1
• /
• pp.24-29
• /
• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.2
• /
• pp.350-356
• /
• 2012

The tension effect on fiber Bragg gratings was analyzed and the linearity of 1.24 nm/10kpsi was obtained when Bragg wavelength was varied within 3 nm by applied tension. Using tension control method, different center wavelength fiber Bragg grating(FBG) were fabricated by only single period phase mask. These serially connected four FBGs showed the transmission spectrum of 1.5 nm linewidth as a 3 dB bandwidth which was twice that of a conventional FBG.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.442-445
• /
• 2003

In this study, we developed the 40 J-class MPC(magnetic pulse compression) system for exciting excimer laser and investigated the optimal conditions of each stage of MPC circuit. This system consists of a DC power supply, a pulse transformer and four saturable inductors. The number of turns of saturable inductors at each stage of MPC circuit are 140, 25, 5, 1 and the optimal storage capacitance of each stage are 34 nF, 28.9 nF, 22.1 nF, respectively. In the improvement MPC system, we have obtained an output voltage of 43 kV, a current of 8.25 kA and a pulse duration of 360 ns. Also, the maximum pulse compression ratio of 77.7 and the current gain of 71.7 were obtained.