• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.315-315
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• 2007

본 논문에서는 DLC (Diamond-like carbon)박막이 가지는 높은 경도, 낮은 마찰계수, 전기적 절연성, 화학적 안정성 등의 특성을 이용하여, 리소그래피를 위한 resist나 hard coating물질로써 응용하기 위해, DLC 박막의 에칭에 관한 연구를 진행하였다. DLC 박막의 합성 과 에칭은 13.56 MHz RF plasma enhanced vapor deposition technique를 통해 이루어졌으며, DLC 박막은 150 W의 RF Power에서 메탄 $(CH_4)$과 수소$(H_2)$ 가스를 이용하여 약 300 nm의 두께로 제작되었으며, DLC박막의 에칭은 RF power의 변화 (50~250 W)와 산소 $(O_2)$가스의 유량변화 (5~25 sccm)에 따라 실시하였다. 에칭 되어진 DLC 박막의 표면 특성들은 AFM (atomic force microscopy)과 contact angle 장치를 사용하여 측정되었고, 측정된 결과로써 DLC 박막은 RF power와 산소 가스의 유량이 높을수록 etching rate는 증가하였고, 박막의 표면은 거칠어졌으며, 결국 DLC 표면에서는 산소에 의한 결합의 증가로 인해 친수성을 나타내었다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1455-1456
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• 2006

반도체 에칭분야에 많이 이용되고 있는 $CF_4$, $C_{2}F_6$, $C_{3}F_8$가스들의 전자수송계수들을 볼츠만 방정식을 이용하여 해석하고자 한다. 특히 혼합가스를 이용하여 확산방전스위치에서 요구되어지는 특성을 파악하고자 할 때 시뮬레이션에 의한 적절한 혼합비 구현을 위하여 이들 순수가스들이 가지고 있는 전자충돌단면적을 해석하고, 전자이동속도와 부착계수 값을 2항과 다항근사 볼츠만 해석을 통해 $0.1{\sim}300$ Td에 걸친 광범위 표에서 해석하고자 한다.

• Journal of the Korean Magnetics Society
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• v.6 no.6
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• pp.367-374
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• 1996

The developmement of electronic machine industries requires miniature of size as well as increasement of driving frequency in electronic parts, recently. To realize micro-struture of magnetic devices, in this study, we fabricated thin film inductors by using thin film manufacturing techniques such as photolithography and wet etching process, and these devices are measured at high frequency range of 1 MHz~1 GHz. The results are as follows. The accurate measuring technique by using network analyzer system having microstrip line was established. The manufactured inductors are fabricated with several ten micrometers by means of wet etching process known as easier and more economic than dry etching process. VVhen the device size of two types (spiral, meander) is the same, inductance value L and quality factor Q of spiral type devices are larger than those of meander type, but driving frequency of spiral type is lower than that of meander type due to increasement of inductance L. It is necessary to decrease resistance value R by increasing cross section of the conductor film coil. Thus high frequency measuring method would be a very useful for another measuring fields of the range over several hundreds MHz.

• Progress in Medical Physics
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• v.1 no.1
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• pp.97-107
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• 1990

A method of detecting charged particles in an allyl diglycol carbonate material (PN-3) which is available, amorphous, optically clear and thermoset plastic in which nuclear particle tracks could be revealed by etching in hot NaOH solutions, has been investigated. It has been applied to the study of alpha particle tracks over an energy range of 3.17～5.49 MeV which has been obtained after having passed through several sheets of polycarbonate. The dose equivalent rate of the alpha source was calculated and the spark chamber was used in order to measure the range of alpha particles after having passed through different number of absorbers. The etching characteristics and the detection response of PN-3 have been studied as a funcion of lengths of etched tracks against the parameters of energies and of the track etching rate(V$_{T}$). The investigation of the etching process for alpha particles in the PN-3 provided the most interesting results.s.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.189-194
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• 2011

Si-cell was prepared with various types owing to the etching times textured by the KOH etching solution. The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor, and the metalization was done using by the Al back electrode and Ag front electrode. Textured Si surface was etched by the pyramid formation. The efficiency and the fill factor was increased in the Si-cell with a large size of pyramids, because of the series resistances decrease depending on the increasing of the photon absorbance. Increasing of the absorbance occurred the induction of the short current and open voltage, and then the efficiency was increased.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.590-599
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• 1994

A work on the brittle to ductile transition (BDT) in single crystal alumina has been performed to understand and assess the dynamics of dislocation mobility around crack tip of brittle material. The critical stress intensity factor and yield strengths were obtained from bending test using precracked specimens at elevated temperatures. It was found that the BDT temperature was dependent on strain rate and orientation of specimen : for (1120) fracture surface, $1034^{\circ}C$, $1150^{\circ}C$ for $4.2 \times 10^{-6}$, $4.2 \times 10^{-7}s^{-1}$ respectively. Under a 4 point bending test, the moving distance of dislocation generated near crack front in ductile range is determined by an etch pits method. The velocity of dislocation in sapphire obtained from the double etching method was applied to modelling study.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.682-685
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• 2003

In this paper, we propose the method to measure the Young's modulus of carbon nano tube which was manufactured by chemical vapor deposition. We also made the tungsten tip by electrochemical etching process and the carbon nano tube which was detangled through ultra-sonication with isopropyl alcohol was attached to the tungsten tip. This tip which was composed of tungsten tip and carbon nano tube can be used in Young's modulus measurement by applying DC voltage with counter electrode. The attachment process and measurement of the deflection of carbon nano tube was done under optical microscope.

• Proceedings of the KIEE Conference
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• 2002.07d
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• pp.2052-2054
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• 2002

장비 플라즈마의 감시는 장비의 신뢰성과 생산성의 유지에 중요하다. 이산 웨이블릿 기술(Discrete Wavelet Transform)을 에칭 프로파일 표면의 이상(Anomaly)을 검출하는 데 응용하였다. 플라즈마 이상은 $SF_6$ 유량에 변화를 주면서 모의실험 되어졌다. 프로파일의 수직, 수평 그리고 수직과 수평부분이 합해진 부분에 대한 변환된 계수의 변화를 개별적, 그리고 총체적으로 평가하였다. 그 결과 각 부분에 대해 4번째의 계수가 가장 높은 민감도를 보였으며, 총체적인 평가에 있어서는 합해진 부분에 대한 민감도가 가장 높았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.984-987
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• 2003

유기발광소자 안에 존재하는 비발광영역(dark spot)의 전압에 대한 영향을 근접장 마이크로파 현미경(near-field scanning microwave microscope)을 이용하여 관찰하였다. 유기발광소자는 glass/indiumtin oxide(ITO)/Cu-Pc/tris-(8-hydroquinoline)aluminum(Alq3)/aluminum(Al) 의 기본구조로 제작하였다. Dark spot은 ITO 기판을 부분적으로 에칭하여서 형성시켰다. Dark spot에 $0{\sim}l5 V$ 까지 전압을 인가시키면서 인가 전압에 따른 전기적 특성을 근접장 마이크로파 현미경 image의 변화와 반사계수인 $S_{11}$ 측정을 통하여 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.147-150
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• 2003

유기발광소자 안에 존재하는 비발광영역(dark spot)의 전압에 대한 영향을 근접장 마이크로파 현미경(near-field scanning microwave microscope)을 이용하여 관찰하였다. 유기발광소자는 glass/indiumtin oxide(ITO)/Cu-Pc/tris-(8-hydroquinoline)aluminum(Alp3)/aluminum(Al)의 기본구조로 제작하였다. 비발광영역은 ITO 기판을 부분적으로 에칭하여서 형성시켰다. Dark spot에 0~15V 전압을 인가시키면서 인가 전압에 따른 dark spot 구조적 및 전기적 특성을 근접장 마이크로파 현미경 Image의 변화와 반사계수인 $S_11$측정을 통하여 연구하였다.