• Title/Summary/Keyword: 압전 상수

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Fabrication of pyroelectric IR sensors with PLT thin plates compensating for piezoelectric effect (PLT 박편을 이용한 압전특성이 보상된 초전형 적외선 센서의 제작)

  • Kim, Young-Eil;Roh, Yong-Rae;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.6 no.1
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    • pp.1-5
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    • 1997
  • Highly sensitive pyroelectric IR sensors were fabricated with La-modified $PbTiO_{3}(PLT)$ thin plates compensating for piezoelectric effect. The device was fabricated in a dual form by placing two PLT cells, each of $1{\times}2\;mm^{2}$, side by side with appropriate electrode configuration. The dual element sensor had a signal to noise ratio of about 350 that was much larger than that of single element sensors. Further the dual element sensors exhibited excellent pyroelectric properties such as a large voltage responsivity of 2400 V/W, a pyro-coefficient of $4.6{\times}10^{-8}\;C/cm^{2}K$, a voltage figure of merit of $4.2{\times}10^{-11}\;Ccm/J$, and a small thermal time constant of 8.7 msec. It was confirmed through experiments that the dual element sensor was applicable to detect the two-dimensional moving direction of human beings.

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Fabrication and Properties of $(Pb_{1-x}C_{ax})((Co_{\frac{1}{2}}W_{\frac{1}{2}})_yTi_{1-y})O_3+(MnO_2, NiO)$ piezoelectric ceramic (압전세라믹 $(Pb_{1-x}C_{ax})((Co_{\frac{1}{2}}W_{\frac{1}{2}})_yTi_{1-y})O_3+(MnO_2, NiO)$)

  • Mun, Dong-Jin;Do, Si-Hong;Jang, Ji-Won
    • The Journal of the Acoustical Society of Korea
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    • v.6 no.4
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    • pp.55-63
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    • 1987
  • Modified $PbTiO_3$ piezoelectric ceramics added with 0.2, 0.25, 0.3 mol of $CaCO_3$ and 0.04 mol of $(Co_{\frac{1}{2}}W_{\frac{1}{2}})$ and 0.05 mol of $MnO_2$ and NiO have been fabricated. These ceramics can be poled sufficiently within 10 minutes at $100^{\circ}C$ under about d.c. field of 40 kv/cm. Detailed measurement was performed on dielectric constants, cutie temperatures, elastic and piezoelectric properties and coupling factors for the fabricated ceramics. The most value of the piezoelectric coupling factors was coupling factor of thickness mode kt and its value for 0.25 mol of Ca was about $45\%$. Dielectric constants of $\varepsilon_{33}^T$ and $\varepsilon_{11}^T$ for 0.25 mol of Ca were 242 and 260, and coupling factor ratio (kt/Kp) and Qm were 6 and 357 respectively.

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Dielectric and Piezoelectric Properties of PMW-PNN-PZT System Ceramics (PMW-PNN-PZT계 세라믹스의 유전및 압전특성)

  • 윤광희;류주현;윤현상;박창엽
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.3
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    • pp.214-219
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    • 2000
  • In this paper the structural dielectric and piezoelectric properties of Pb[(M $g_{1}$2// $W_{1}$2/)$_{x}$-(N $i_{1}$3//N $b_{2}$3/)$_{0.15-x-(Zr_{0.5})}$ $Ti_{0.5}$)$_{0.85}$$O_3$ (x=0.0~0.10) ceramic were investigated with the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$. According to the substitution of Pb(M $g_{1}$2//W/1/2/) $O_3$ curie temperatures were slightly decrease due to the decrease of the tetrag-onality of crystal structure and coercive fields were decreased. Up to the substitution of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ 3mol%,remnant polarization dielectric constant piezoelectric constant were increased. Dielectric constant and electro-mechanical coupling factor( $k_{p}$, $k_{31}$ ) were appeared the highest value of 2230, 0.64, and 0.38 and piezoelectric constant( $d_{33}$ , $d_{31}$ ) was the largest value of 418, 202($\times$10$^{-12}$ /C/N), respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/N) respectively, when the substitution amount of Pb(M $g_{1}$2// $W_{1}$2/) $O_3$ was 3mol%.s 3mol%.%.

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Poly(vinylidene fluoride) Piezoelectric Film Characteristics by Poling Conditions for Distributed Tactile Sensor (분포형 촉각센서를 위한 압전성 폴리(비닐리덴 플루오라이드) 필름의 극화 특성)

  • Lee Kyungsub;Kim Dongouk;Kim Hyungtae;Jung Kwangmok;Choi Hyoukryeol;Nam Jae-Do
    • Polymer(Korea)
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    • v.28 no.5
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    • pp.361-366
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    • 2004
  • The poling characteristics of PVDF (poly(vinylidene fluoride)) film was investigated by measuring the electric voltage generated by the external load for the distributed tactile sensor applications. The poling conditions for the PVDF films were controlled by changing temperature and electric field, and the resulting crystal structure of the $\beta$-phase crystal was confirmed by FT-IR, DSC, and XRD experiments. The $\beta$-phase crystal was increased with the poling temperature and poling voltage, and subsequently the permittivity of the Poled PVDF films was increased. Finally, the prototype tactile sensor was tested by a 8 $\times$ 8 may circuit exhibiting high voltage signal for the highly poled PVDF films.

Dielectric/piezoelectric Properties of Mn-Doped PMN-PZT with Variations of the Sintering Temperature and Addition of B2O3 (소결온도와 B2O3첨가량에 따른 Mn첨가 PMN-PZT의 유전 및 압전특성의 변화)

  • Shin Hyo-Soon
    • Journal of the Korean Ceramic Society
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    • v.41 no.9
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    • pp.709-714
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    • 2004
  • The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt% B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt% of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt% of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50% and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt% B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5% regardless of the amount of B$_2$O$_3$.

증착 환경 변화에 따른 인이 첨가된 ZnO 박막의 물성연구

  • Jeong, Yeong-Ui;Lee, Seung-Hwan;Hwang, Seon-Min;Jo, Chang-U;Bae, Jong-Seong;Park, Seong-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.299-299
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    • 2012
  • 투명전도산화물 박막은 디스플레이, 태양전지, 압전소자 등 다양한 응용분야에 많이 이용되고 있는 소재이다. 그 중에서 현재 산업에서 활용 빈도가 높은 투명전도막의 재료는 ITO를 기반으로 하는 물질이다. 하지만 인듐의 높은 생산단가와 플라즈마 노출시 열화로 인한 문제점 때문에 기존의 ITO를 대체하기 위한 새로운 재료에 관심이 증대되고 있다. 본 연구에서는 대표적인 ITO 대체 물질 중의 하나인 ZnO 박막에 대해서 증착환경변화에 따른 물성변화를 조사하였다. 먼저 대기중에서 안정화된 ZnO 박막을 얻기 위해서 인(P) 2% 첨가된 ZnO 세라믹을 고상반응법으로 제작하고, 펄스레이저 증착법을 이용하여 Al2O3(0001)기판에 산소분압을 30~150 mTorr로 변화를 주어 P-ZnO 박막을 제작하였다. 이 때 증착온도는 $400^{\circ}C$로 고정하였다. X선 회절 결과로부터 산소분압에 상관없이 ZnO (002)방향으로 증착되었다. 하지만 결정립의 크기는 산소분압이 증가하면서 줄어들고, ZnO (002)피크로부터 얻어진 격자상수(c-축)는 벌크 값에 가까워짐을 알 수 있었다. 하지만 P첨가로 인해서 박막의 격자상수는 순수한 ZnO 벌크 값 보다 큰 것으로 알 수 있다. 산소분압 변화에 따른 P-ZnO 박막의 산화 상태는 X-선 광전자 분광기를 이용하여 측정하였다. 그 결과 산소 core-level의 스펙트럼은 자연산화, 산소 vacancy, Zn-O 결합으로 구성되어짐을 알 수 있었다. 산소분압이 증가하면 Zn-O 결합은 증가하지만 산소 vacancy는 감소함을 알 수 있었다. 전기적 특성 결과 P-ZnO 박막은 30 mTorr에서는 n형 반도체 특성, 100 mtorr에서 p형 반도체의 특성이 나타내었고, 산소분압이 증가하면 다시 n형 반도체 특성을 나타냄을 알 수 있었다. 광학적 특성 결과 P-ZnO 박막은 산소분압에 상관없이 가시광선 영역에서 80%이상의 투과율을 나타내었으며, 산소분압이 증가할수록 에너지 갭이 증가하였다.

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Electrical properties of piezoelectric PZT thick film by aerosol deposition method (에어로졸 증착법에 의한 압전 PZT 후막의 전기적 특성)

  • Kim, Ki-Hoon;Bang, Kook-Soo;Park, Dong-Soo;Park, Chan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.6
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    • pp.239-244
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    • 2015
  • Lead zirconate titanate (PZT) thick films with thickness of $10{\sim}20{\mu}m$ were fabricated on silicon substrate by aerosol deposition method. As-deposited films on silicon were annealed at the temperatures of $700^{\circ}C$. The electrical properties of films deposited by PZT powders were characterized using impedance analyzer and Sawyer-Tower circuit. The PZT powder was prepared by both conventional solid reaction process and sol-gel process. The remanent polarization, coercive field, and dielectric constant of the $10{\mu}m$ thick film with solid reaction process were $20{\mu}C/cm^2$, 30 kV/cm and 1320, respectively. On the other hand, the PZT films by sol-gel process showed a poor dielectric constant of 635. The reason was probably due to the presence of pores produced from organic residue during annealing.

Fretting Wear Test of Inconel 690 Tubes Employing Piezoelectric Actuator (압전 구동기를 이용한 인코넬 690 튜브의 프레팅 마멸시험)

  • Chung, Il-Sup;Lee, Myung-Ho;Park, Ki-Hong;Lee, Jung-Hoon;Kwon, Jae-Do
    • Journal of the Korean Society for Precision Engineering
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    • v.26 no.2
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    • pp.101-108
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    • 2009
  • A fretting wear test rig for dry ambient condition, which employs a piezoelectric actuator, has been developed. It is driven and loaded in a very simple manner with acceptable experimental accuracy. By using the rig, Inconel 690 tube has been tested under the normal load of 10 and 15N with sliding amplitude of less than $100{\mu}m$ during $10^6$cycles. The wear resistance of the material has been characterized in terms of the wear coefficient based on the work rate model. SEM micrographs show the complex structures of the scars, which consist of risen peaks, plate-type thin layers and locally exposed bare surfaces. The cracks spread over the layers give clue to the fretting wear mechanism of the material.

Electrical properties of multilayer actuator and linear ultrasonic motor using low temperature PZW-PMN-PZT ceramics (저온소결 PZW-PMN-PZT 세라믹을 이용한 적층액츄에이터 및 선형초음파 모터의 전긱적 특성)

  • Lee, Il-Ha;Yoo, Ju-Hyun;Hong, Jae-Il;Jeong, Yeong-Ho;Yoon, Hyun-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.206-206
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    • 2008
  • 압전소자를 이용한 초음파 모터는 전자기적 원리로 동작하는 기존의 모터에 비해 구조가 간단하고 소형, 경량화가 가능하며 저속에서 큰 토크가 가능하고 ${\mu}m$단위 까지 정밀제어가 가능하다는 장점 등으로 인해 그 응용분야가 점차 확대되고 있다. 초음파 모터의 원리는 수평과 수직방향에서 변위가 타원형 운동을 형성하는 것이다. 따라서 선택한 타원운동의 방식에 의해서 모터의 형상이 달라진다. 초음파 모터는 액츄에이터를 사용하여 만들기 때문에 액츄에이터의 특성은 모터의 타원변위나 토크에 영향을 미친다. 단판형 액츄에이터에 비하여 적층 액츄에이터는 입력 임피던스를 낮추어 낮은 구동전압에서 구동이 가능하며 큰 변위와 토크를 발생하기 때문에 진동자의 수명 향상과 구동전압을 낮추기에 적합하다. 적층 액츄에이터는 변위량이나 응력 등을 개선하기 위해서 전기기계 결합계수(kp) 및 압전 d상수가 큰 재료가 요구되며, 고전압에서 장시간 구동 시 마찰에 의한 열손실을 감소시키기 위해 높은 기계적 품질계수(Qm)를 가져야한다. 적층 시 내부전극으로 사용하는 Pd, Pt가 함유된 전극은 가격이 비싸 제조비용을 상승시킨다. 상대적으로 값싼 Ag전극을 사용하면 비용절감을 할 수 있지만 융점이 낮아서 저온소결이 불가피하다. 따라서, 특성이 우수한 적층 액츄에이터를 제조하기 위해서 저손실, 저온소결 할 수 있는 액츄에이터 재료가 필요한 실정이다. L1-B4 혈 선혈 초음파 모터는 L1모드와 B4모드의 공진 주파수가 일치하여야 큰 변위를 얻을 수 있는데 이전의 논문에서 Atila를 이용한 시뮬레이션 결과를 분석한 봐 있다. 적층 액츄에이터의 층수를 5,7,9,11,13,15층으로 하여 L1-B4모드에서의 공진주파수를 비교한 결과 13 층일 때 두 모드가 비슷한 공진주파수를 보였고, 티원변위궤적도 다른 층수에 비해 크게 나타났다. 본 연구에서는 시뮬레이션 결과 가장 좋은 특성을 보인 13층 액츄에이터로 선형 초음파 모터를 제작하였다. 또한, 액츄에이터는 압전 및 유전특성이 우수한 저온소결 PZW-PMN-PZT세라믹을 이용하여 제작하였고, 내부전극으로 Ag전극을 사용하였다. 제작된 13 층 선형초음파모터를 가지고 프리로드 및 전압에 따른 속도를 조사하였고, 시뮬레이션 결과와 비교해 보았다.

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Processing and Properties of FGM Piezoelectric Actuator with Gradient Composition of Pb(Z$n_{1/3}$N$b_{2/3}$)$O_3$-Pb(N$i_{1/3}$N$b_{2/3}$)$O_3$-PZT and PLZT (Pb(Z$n_{1/3}$N$b_{2/3}$)$O_3$-Pb(N$i_{1/3}$N$b_{2/3}$)$O_3$-PZT와 PLZT를 경사조성으로 하는 경사기능 압전엑튜에이터의 제조와 물성)

  • Kim, Han-Su;Choe, Seung-Cheol;Choy, Jin-Ho
    • Korean Journal of Materials Research
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    • v.3 no.3
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    • pp.261-271
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    • 1993
  • Functionally Gradient Materials(FGM) of 4.5Pb($Ni_{1/3}Nb_{2/3})O_3$-55PZT and PLZT(lO/70 /30, 11/60/40) were prepared. Its dielectric and piezoelectric strain properties were investigated. The FGM were pressed into A/B/ A configuration using two kinds of films, one layer(A) was eliminated from FGM by polishing after sintering at $l250^{\circ}C$, 2 hrs. The acrylic binder system was successfully applied for crack free film through doctor blade method. The thickness of gradent layer in FGM was about 30${\mu}$m. Dielectric properties of FGM show the average value of each side layer. The strain-electric field characteristics of FGM were significantly improved comparison with the other single compositions. The prepared FGM piezoelectric actuator shows about 3${\mu}$m/IOOV displacement.

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