• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.98-98
• /
• 2003

비정질 실리콘 박막을 태양전지, 박막 트랜지스터, 이미지 센서, 컬러 디텍터 등에 적용하기 위한 많은 연구가 진행되고 있다. 이중 태양전지에 적용하기 위한 비정질 실리콘 박막은 p/i/n 다이오드 구조를 형성하게 되는데, 태양전지의 효율을 증가시키기 위해 결정질을 형성하거나 실리콘 화합물 박막을 적용한다. 본 연구에서는 비정질 태양전지의 흡수층(absorption layer)으로 사용되는 수소화된 비정질 박막의 결정화에 수소의 희석비가 미치는 영향을 파악하고자 하였다. PECVD 장비로 실란(SiH$_4$)과 수소(H$_2$) 가스를 이용하여 실리콘 박막을 증착하였고, 수소의 희석비(dilution ratio)를 변화시켜 비정질 실리콘 박막 내에 결정질 실리콘이 형성되는 정도를 관찰하였다. SEM과 Raman Spectroscopy를 이용해 박막의 두께 및 결정화도를 측정하였다. 실란에 대한 수소의 희석비가 증가할수록 증착률은 낮아지지만, 결정화도가 높아지는 것을 관찰할 수 있었다. 본 연구에서 형성한 결정질 실리콘 박막을 태양전지의 흡수층에 적용하면 효율 증가에 크게 기여할 것으로 판단된다.

• Journal of Sensor Science and Technology
• /
• v.6 no.5
• /
• pp.346-355
• /
• 1997

In this paper, the analyses of the stress disturibution and frequency characteristics of silicon microstructures for an accelerometer were performed using the general purpose finite element simulation program, ANSYS. From the analyses, we determined the parameter values of a new 6-beam piezoresistive accelerometer applicable to the accelerometer's specification in airbag system of automobile. Then, the mass paddle radius, beam length, beam width, and beam thickness of the designed accelerometer were$500{\mu}m$, $350{\mu}m$, $100{\mu}m$, and $5{\mu}m$, respectively and two different seismic masses with 0.4 mg and 0.8 mg were defined on the same sensor structure. The designed 6- beam accelerometers were fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon substrates and the characteristics of the fabricated accelerometers were investigated. Then, we used a micromachining technique using porous silicon etching method for the formation of the micromechanical structure of the accelerometer.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.3
• /
• pp.18-24
• /
• 2011

This paper presents that the yield strength of the pressure sensor with a double boss diaphragm structure can be improved as the grooves are formed at the corner of the diaphragm bridge. Generally the boss structure is widely used for the low-pressure sensor, of which the sensitivity is not enough in case of the small diaphragm size limited by a chip size constraint. The double boss structure pressure sensor exhibits a great sensitivity, but suffers from the low yield strength problem due to the high stress occurred at the corner of the diaphragm bridge to be limited in the operating range. ANSYS simulation is performed by changing the length of the groove from 0.5${\mu}m$ to 10${\mu}m$ at the corner of the diaphragm bridge of the double boss structure pressure sensor. The maximum stress is analyzed at the corner of the diaphragm bridge, the edge of the diaphragm bridge, and the position of the piezoresistive sensor. Consequently, in case the length of the groove from the edge of the diaphragm is 6${\mu}m$ or greater, the stress occurred in the corner of the bridge is less than the stress acting on a piezoresistive element.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2009.05a
• /
• pp.241-244
• /
• 2009

We studied the optimization method of sensing part for measuring heart rate in wrist. In order to know optimum structure of sensing part, we measured the heart rate signal by changing the shape and size of sensor pad structure and the thickness of silicon. The shapes of structure using in experiment are Empty, Rectangle, Embossing, Length, Width. We were compared the amplitude of output signal about each shape when thickness of silicon pad is increasing from 0 to 7 mm by 1 mm.

• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1415-1417
• /
• 2003

Yoneyama 등이 2001년 기존의 potentiometry 형의 요소 센서보다 우수한 성능을 갖는ampeometry 정의 요소 센서를 제안한 이후, 전자 전달 메커니즘에 관한 관심이 집중되어 왔으나, urease로부터 전극 기질까지의 전자 전달 매질로서 전도성 고분자보다 쉽고 단순한 공정은 아직까지 제시된 바 없다. 본 논문에서는 전도성 고분자로서 polypyrrole(PPy)과 poly(3-methylthiophene)(P3MT)을 이용하여 다공성 실리콘(PS) 요소 센서를 제작하고 각각의 특성을 전기화학적으로 분석하였다. Urease 고정화 전압, 고정화 시간, 고정화 시의 효소 농도, 수소이온 농도 등이 감도에 미치는 영향은 PPy 와 P3MT 각각의 경우 유사한 경향성을 보였다. 감도 특성의 경우, PPy는 다공질 실리콘 전극과 평면 전극 각각에 대하여 1.55 ${\mu}A/mM{\cdot}cm^2$와 0.91 ${\mu}A/mM{\cdot}cm^2$였고, P3MT의 경우는 각각 8.44 ${\mu}A/mM{\cdot}cm^2$와 4.28 ${\mu}A/mM{\cdot}cm^2$의 감도를 보였다. 즉, PPy가 P3MT 보다 일반적으로 높은 감도를 보였고, 다공질 실리콘 전극을 사용하는 경우, 그렇지 않은 경우보다 약 2배외 감도 향상 효과를 기대할 수 있었다. 재현성이나 안정성의 경우는 P3MT 가 PPy 보다 우수하였다. 사용 빈도에 따른 감도 저하는 다공질 실리콘 전극의 경우 직선적으로 감소하셨으나 평면 전극의 경우는 지수함수적으로 감소하였다 시간에 따른 감도 저하 현상은 만15일 이후의 감도를 기준으로 하여, 10% 미만의 감도저하를 보임으로써 PPy, P3MT 모두 우수한 특성을 보였다.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.95-99
• /
• 1993

a-Si : H TFTs for image sensor have been fabricated and their operational characteristics have been investigated. Hydrogenated amorphous silicon nitride(a-SiN : H) films were used for the gate insulator and $n^{+}$-a-Si : H films were depostied for the source and drain contact. The thicknesses of a-SiN : H and a-Si : H films were $2000{\AA}$, respectively and the thickness of $n^{+}$-a-Si : H film was $500{\AA}$. Also the channel length and channel width of a-Si : H TFTs were $50{\mu}m$ and $1000{\mu}m$, respectively. The ON/OFF current ratio, threshold voltage, and field effect mobility of fabricated a-Si : H TFTs were $10^{5}$, 6.3 V, and $0.15cm^{2}/V{\cdot}s$, respectively.

• Journal of Sensor Science and Technology
• /
• v.6 no.3
• /
• pp.221-227
• /
• 1997

The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of the sensor, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET's sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.

• Journal of Sensor Science and Technology
• /
• v.5 no.5
• /
• pp.31-37
• /
• 1996

This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of $1kgf/cm^{2}$, ${\pm}0.012%FS/^{\circ}C$ of TCO, and ${\pm}0.08%FS/^{\circ}C$ of TCS in the temperature range of $-20{\sim}+125^{\circ}C$. It showed ${\pm}0.2%FS$ of hysteresis and ${\pm}1.5%FS$ of non-linearity. Shear-type polycrystalline silicon pressure sensor can eliminate temperature dependence of offset caused by resistors mismatch and be used in relatively wide temperature range, compared to the conventional full-bridge silicon pressure sensors.

• Journal of Sensor Science and Technology
• /
• v.8 no.2
• /
• pp.202-209
• /
• 1999

Microstrip line was fabricated on the oxidized porous silicon layer which has nearly electrically and chemically identical properties with thermally oxidized silicon layer. Thick oxidized porous silicon layer of few tenth of micrometers was prepared by thermal oxidation of porous silicon layer on silicon substrate. Multi-step thermal oxidation process was used to obtain high Quality and thick oxidized silicon layer and to release thermal stress. Microstrip line was fabricated on the oxidized porous silicon layer. Its microwave characteristics were measured and the availability for MMIC substrate was investigated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.62-62
• /
• 2010

근래 실리콘 나노선을 이용한 FET타입의 바이오 센서로의 응용 연구가 활발하다. 본 연구에서는 top-down 방식으로 제작한 실리콘 나노선의 전자수송 특성을 측정 분석하여 실리콘 나노선의 기하학적 변수에 따른 수송 변수를 추출하였다. 두께가 40 nm인 SOI wafer로부터 출발하여 일반적인 포토리소그라피와 건식식각 공정을 통하여 선폭이 100-300 nm 그리고 길이가 2-20 mm인 실리콘 나노선을 제작하고 resistance 및 transconductance를 측정하여 전하농도와 이동도의 선폭에 대한 의존도를 얻었다. 이를 바탕으로 bare surface, OH-activated surface, APTES-treated surface등 실리콘 표면상태에 따른 표면전하의 시간에 대한 진화과정을 모니터 할 수 있었으며, 또한 PBS 용액상태에서 pH를 변화시킴에 따른 전하수송 특성곡선의 변화를 연구하였다.