• Electrical & Electronic Materials
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• v.10 no.7
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• pp.645-650
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• 1997

We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.592-592
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• 2012

태양전지에서 고효율 달성을 위해 태양광을 더 많이 활용하기 위해서는 태양전지 표면에서의 광 반사를 줄여야 하는데 가장 효과적인 방법은 실리콘 기판의 wet etching 공정을 통한 텍스쳐링이다. 태양전지에서 가장 많이 사용되는 파장대역은 가시광선 영역인데 555 nm 파장에서 실리콘 표면의 total reflectance는 30.1%로 매우 높고 diffuse reflectance는 0.1%로서 무시할만큼 적다. 하지만 wet etching을 한 후 total reflectance는 18%까지 감소하였고, diffuse reflectance는 16%까지 증가하였다. 결정면에 따른 식각선택성을 이용하는 이방성 etching으로 V groove 모양의 표면형상을 얻을 수 있었고, 후속 등방성 etching을 하여 U groove 표면형상을 얻을 수 있었다. 또한 wet etching의 문제점중의 하나는 반응중에 생성되는 수소기체가 실리콘 표면에 부착되어 etching이 불균일하게 진행되는 것인데 초음파를 사용하여 이 문제를 해결하였다. 그리고 Etchant의 성분용액중 하나인 IPA의 농도조절을 통해 표면에 형성되는 피라미드의 크기를 조절할 수 있었다. 본 연구에서는 실리콘 표면형상의 각각 서로 다른 크기와 모양에 따라 태양전지를 만들었을 때 빛의 활용 측면에서 어떤 변화가 있고 얼마만큼의 효율변화가 있는지에 대해서도 알아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.334-337
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• 1996

Si anisotropic etching is a key technology for micromachining. The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this work the anisotropic etching of single crystal Si in a TMAH (($CH_3$)$_4$NOH) based solution was studied. The influence of the addition of IPA to TMAH solution on their etching characteristics was also presented. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant concentration. The etch rates of (100) oriented Si crystal planes decreased linearly with increasing the IPA concentration, The etched (100) planes were covered by Pyramidal-shaped hillocks below 15 wt.%, but very smooth surfaces were obtained above 20 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.1-6
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• 2007

This study investigated the magnetic properties of $Ni_{80}Fe_{20}/SiO_2$ laminates with shape-induced magnetic anisotropy. The multilayer films were deposited on Si or upilex substrates, from separate $Ni_{80}Fe_{20}$ and $SiO_2$ (at %) alloy targets using a rf diode sputtering system. $Ni_{80}Fe_{20}/SiO_2$ laminates with a various number of bilayers (N) were prepared. The laminates with ellipse array patterns were prepared using photolithographic technique. The magnetic properties were measured at room temperature using a B-H hysteresisgraph and a high frequency permeameter. The several steps during domain wall reversal were observed in multilayer films, attributing to inter-magnetic layer coupling. Intrinsic uniaxial anisotropy field increases with N. The experimental values of the total anisotropy field are found to be in good agreement with the calculated values. This study utilized the shape anisotropy of the laminated film objects with small ellipse array patterns to induce a larger uniaxial anisotropy so as to maximize their operating frequency.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.70-74
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• 1995

We have observed anisotropic anodisation process for porous silicon formation. The starting material was (100) silicon $n/n^{+}/n$ wafer structured by $n^{+}$-diffusion on n-type substrate and by subsequent n-epitaxial growth. After the top n-silicon epitaxial layer was etched to open the porous silicon layer(PSL) anodisation window, anodisation takes place only to $n^{+}$-buried layer. The process of porous silicon formation on (100) sample was anisotropic, which was evident from that the shapes of the reacted porous silicon layer was all squarelike regardless of the shapes of reaction windows. The experimental results show that the PSL anodisation process does not depend on chemical reaction but does on electrical conduction property, which is hole mobility depending on the crystal direction.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1513_1514
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• 2009

This paper reports on a fabrication of novel substrate integrated waveguide (SIW)-based shielded stripline applicable to the broadband transverse electromagnetic (TEM) single-mode propagation. We suggested a structure for half-SIW and half-shielded stripline, which combined through the benzocyclobutene (BCB) bonding layer. The electrical interconnection between the sidewall of anisotropic wet-etched silicon and patterned BCB layers is measured subsequent to the metalization on the side wall. The proposed SIW-based shielded stripline has great potential in terms of simple fabrication, integration with planar circuits and monolithic system fabricated on a SIW structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.23-26
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• 1997

This work presents the TMAH/IPA anisotropic etching characteristics with addition of Pyrazine. (100) Si etching rate of 0.747 ${\mu}{\textrm}{m}$/min at 8$0^{\circ}C$ was obtained using TMAH 25 wt.% / IPA 17 vol.% / pyrazine 0.1 g. The etching rate of (100) Si is increased about 52% compare to pure TMAH 25 wt.%. But etching rate of (100) Si is decreased with increasing Pyrazine additive. Activation energy of TMAH/IPA/pyrazine is much lower than TMAH and TMAH/IPA solutions. Addition of Pyrazine does not effect on surface flatness and decreases undercutting ratio about 20 %. Therefore, TMAH/IPA/pyrazine is an attractive anisotropic etchant because of alkaline-ion free.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2007.11a
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• pp.225-228
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• 2007

Micro solid propellant thruster is the most feasible for development with current MEMS. Basic components of micro solid propellant thruster are diverging nozzle, micro igniter, combustion chamber, and solid propellant. Micro nozzles and micro chambers were fabricated using photosensitive glass by anisotropic wet etching technique. Micro Pt heaters on glass membrane which ignited solid propellant were developed. Components of thruster were integrated. Successful ignition was observed.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.16-17
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• 2006

We researched by the characteristic of a anisotropic etching of Si wafer and the Si career concerning the flip chip solder bump. Connectors and Anisotropic Conductive Film (ACF) method was already applied to board-to-board interconnection. In place of them, we have focused on board to board interconnection with solder bump by Si carrier, which has been used as Flip chip bonding technology. A major advantage of this technology is that the Flexible Printed Circuit (FPC) is connected in the same solder reflow process with other surface mount devices. This technology can be applied to semiconductors and electronic devices for higher functionality, integration and reliability.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1974-1976
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• 1996

An electrostatically driven comb actuator with $525{\mu}m$ height was fabricated using (110) Si anisotropic etching in the Potassium Hydroxide(KOH) solution. The etch-rate and etch-rate ratio are strongly dependent on the weight % and temperature of KOH solution. We developed the optimal condition for the anisotropic etching on (110) wafer with varying these conditions. The force that the comb-drive actuator generates is inversely proportional to the distance of gap and proportional to the height of the comb electrodes. The electrodes must have the high aspect ratio. The (110) Si anisotropic etching is very useful to get a high aspect ratio structure.