Effects of annealing on the properties of $WSi_x$ films in ploycide structure formed by LPCVD method
(Polycide구조로 저압화학증착된 $WSi_x$ 박막의 열처리에 따른 거동)
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- Electrical & Electronic Materials
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- v.3 no.4
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- pp.263-270
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- 1990