• Title/Summary/Keyword: 스터브

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Design and Fabrication of Aperture-Coupled Microstrip Cylindrical Dielectric Resonant Antenna for Wireless LAN (무선 LAN용 개구결합 마이크로스트립 원통형 유전체 공진 안테나 설계 및 제작)

  • 이권익;김흥수
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.3
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    • pp.425-431
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    • 2001
  • In this paper, on aperture-coupled microstrip cylindrical dielectric resonant antenna(DRA) consisting of dielectric material with permittivity ${\epsilon}_{r}$ = 36 is designed and fabricated fir wireless LAN. First of all, the feedline length, width, slot length and width of the feeding element were calculated using the theory of microstrip transmission line. Radiation element is designed using the theory of cylindrical dielectric cavity, Resonant frequency of the fabricated cylindrical DRA is 2.449 GHz and VSWR, return loss and bandwidth is 1.009, -47 dB and 70 MHz, respectively. Front-to-back radiation ratio is about 12 dB and 3 dB beamwidth of E-plane and H-plane is 110$^{\circ}$ and 90$^{\circ}$ , respectively.

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A study on efficiency improvement of power amplifier from enhanced harmonic suppression using DGS coupled line (DGS 결합선로를 이용하여 고조파 억압특성을 향상시킨 전력증폭기의 효율증대에 관한 연구)

  • Song, Dae-Geon;Kim, Jang-Won
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.2 no.4
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    • pp.13-18
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    • 2009
  • This paper suggests that efficiency improvement of power amplifier to enhance harmonic suppression using a DGS line structure. A efficiency related harmonic component is an important factor to design of power amplifier. Therefor harmonic component suppress consisting coupled line using DGS after power amplifier. A DGS line with periodic slits and stubs is first designed and joined after power ampifier. Experimental measurements for efficiency of power amplifier in the WCDMA are shown to improve 6% of PAE.

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Narrow Band-pass Filter with Dual-band Using Pseudo-Combline (Pseudo-Combline을 이용한 이중대역 협대역 대역통과 여파기)

  • Yoon, Ki-Cheol;Lee, Hyun-Wook;Li, Meng;Lee, Jae-Yeong;Lee, Jong-Chul
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.10 no.6
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    • pp.84-90
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    • 2011
  • In this paper, a dual-band pseudo-combline narrow bandpass filter is proposed. The proposed bandpass filter adopts the open resonant stubs and the proposed bandpass filter can be used for ITS(Intelligent Transport System) and X-band satellite systems application. The proposed bandpass filter has the insertion and return losses of 1.72 dB and 15.5 dB at the bandwidth of 3.6 % and center frequency of 5.8 GHz, respectively. Also, the second operating frequency band for insertion and return losses are 1.92 dB and 16.3 dB at the bandwidth of 3% and center frequency of 8.5 GHz, respectively.

Design of the Compact Microstrip Bandpass Filter by using DGS Resonator (DGS 공진기를 이용한 소형 마이크로스트립 대역통과 필터의 설계)

  • Cho, Young-Bin;Jun, Kye-Suk
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.2A
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    • pp.147-152
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    • 2005
  • In this paper, we have proposed a novel DGS(Defected Ground Structure) resonator and has designed the band -pass filter using the proposed ${\subset}$ stub-I type DGS resonator. This structure has strong advantages that can vary the retune loss at the passband freely and also can easily tune the attenuation pole frequency at the stopband. The bandpass filter can be made more smaller than the existing filters and be used to find the various applications for eliminating the harmonics and spurious mode at IMT-2000 band.

Equivalent Network Modeling of Slot-Coupled Microstripline to Waveguide Transition (슬롯 결합 마이크로스트립라인-도파관 천이기의 등가 회로 모델링)

  • Kim Won-Ho;Shin Jong-Woo;Kim Jeong-Phill
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.10 s.89
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    • pp.1005-1010
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    • 2004
  • An analysis method of slot-coupled microstripline to waveguide transition is presented to developed a simple but accurate equivalent circuit model. The equivalent circuit consists of an ideal transformer, microstrip open stub, and admittance elements looking into a waveguide and a half space of feed side from a slot center. The related circuit element values are calculated by applying the reciprocity theorem, the Fourier transform and series representation, the complex power concept, and the spectral-domain immittance approach. The computed scattering parameters are compared with the measured, and good agreement validates the simplicity and accuracy of the proposed equivalent circuit model.

Study on Size-Reduced λ/4 Impedance Transformer using T-Equivalent Circuit (T형 등가회로를 이용하여 크기를 감소시킨 λ/4 임피던스 변환기의 연구)

  • Tae-Soon Yun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.4
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    • pp.595-600
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    • 2023
  • In this paper, a modified equations of the T-equivalent circuit of the transmission line with the arbitrary electrical length is suggested. The suggested equations can be calculated without limitation of the equal branch-line. So, a modified T-equivalent circuit can be made with the arbitrary position of the open-stub. Also, the modified T-equivalent circuit can be applied in the arbitrary electrical length and impedance of the transmission line. For example, the λ/4 impedance transformer is converted with 4 divided T-equivalent circuit. The converted λ/4 impedance transformer has the size reduction ratio of 39.4%.

A Study on the New Microstrip Magic Tee (새로운 형의 마이크로스트립 매직티에 관한 연구)

  • Chang, IK Soo;Kim, Jin Hun
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.17 no.3
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    • pp.36-44
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    • 1980
  • A new coplanar Magic Tee has been formed, The H_arm Is made to have a parallel connection on the plane by using a microstrip and the I_arm is serially coupled by a cavity on the circuit mount and also by a gap formed on the microstrip ground plane. Open and shorted stubs are made to have maximum coupling at the gap of the I-arm, and 2 to 1 impedance matching trinsformers in the I and H-arms are designed to obtain 2nd order Chevyshev characteristics. The impedance matching characteristic on each arm is satisfactory : with VSWR less than 1.25, and the isolation between I and H arms less than -40 dB. These results are in good agreement with theoretical prediction.

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A Study on the Design of Ku-band Mixer Using a HEMT (HEMT를 이용한 Ku-band 혼합기의 설계에 관한 연구)

  • 성혁제;구자건
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.7
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    • pp.944-950
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    • 1993
  • Diodes and GaAs have been commonly used in a mixer design until recently. However, diodes are not preferred to use at the front-end of DBS receiver due to the conversion loss large noise. HEMT has larger conversion gain and better noise characteristics comparing with GaAs MESFET. This paper describes the design procedure, structure, and performance of a mixer, utilizaing HEMT designed by OKI Co. . A mixer configuration in which the local oscillator(LO) signal is applied to the gate is used. When the LO power is 0.01 dBm, the conversion gain of 3.7dB is obtained at IF and the 3 dB bandwidth is 400MMz.

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Printed Monopole Antenna of Dual band for Omni-diractional Radiation Patterns (전방향 복사패턴의 이중대역 프린트형 모노폴안테나)

  • 이현진;임영석
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.40 no.11
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    • pp.99-104
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    • 2003
  • We are designed and fabricated the Printed dual monopole antenna with CPW feeder for PCS and IMT2000 band. In this paper il proposed modified dual monopole antenna that is transform conventional monopole antenna to get dual band frequency. The dual monopole antennas had broad bandwidth and omni -directional radiation patterns in construct with conventional monopole antenna. On a monopole operated a stub to other monopole antenna, we could obtain easy an impedance matching. It is increased band width of impedance. The antenna bandwidth is about 150MHz(1.74 ∼1.89〔GHz〕)at 1$^{st}$ resonance frequency and 290MHz(1.95∼2.24GHz) at 2$^{nd}$ resonance frequency on VSWR(equation omitted)1.5 and then we can be got not only 1.75∼1.87〔GHz〕 PCS band but also 1.92∼2.17 〔GHz〕).GHz〕).

Pulsed-Bias Pulsed-RF Passive Load-Pull Measurement of an X-Band GaN HEMT Bare-chip (X-대역 GaN HEMT Bare-Chip 펄스-전압 펄스-RF 수동 로드-풀 측정)

  • Shin, Suk-Woo;Kim, Hyoung-Jong;Choi, Gil-Wong;Choi, Jin-Joo;Lim, Byeong-Ok;Lee, Bok-Hyung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.10 no.1
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    • pp.42-48
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    • 2011
  • In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.